Transmission Electron Microscopy studies of the structure of martensitic interfaces in Cu-Zn: Diffraction contrast

Author(s):  
F.-R. Chen ◽  
G. B. Olson

A Cu-38.6%Zn alloy was treated at 870°C and quenched in ice brine(10% NaOH) to produce martensitic transformation. The parent phase is bcc structure and the martensite phase is 9R close-packed structure. The orientation relationship of the parent phase and martensite was determined by the Kikuchi pattern and diffraction pattern. The experimental lattice deformation matrix can then be deduced from the orientation relationship and assumed correspondence. The lattice deformation matrices determined from experiment and calculated from CRAB martensite crystallography theory are as follows:As shown in Figure 1, a set of dislocations is observed in the martensitic interface whose Burgers vector is determined to be l/3[101]b by the two beam technique. The direction and the average spacing of these dislocations determined from experiment are [.49 . .47]b and 5±1nm respectively. This set of dislocations is consistent with the lattice invariant shear l/3[101]b on the ( 01)b plane with the magnitude 0.022 used in the CRAB martensite crystallography which corresponds to an anticoherency dislocation array with the spacing of 7.75nm and in the direction [.514,. ,.514]b. The habit plane determined from experiment is (.13,.65,.75 )b and close to (.13,.68,.72)b from the prediction of CRAB martensite crystallography.

2015 ◽  
Vol 33 (6) ◽  
pp. 395-401 ◽  
Author(s):  
Ramasis Goswami

AbstractTransmission electron microscopy (TEM) was employed to investigate the dissolution behavior of nanocrystalline grain boundary T1 precipitates in Al-3Cu-2Li. These grain boundary T1 plates exhibit an orientation relation with matrix, with the (1-11)α-Al parallel to (0001)T1 and [022]α-Al parallel to [10-10]T1, which is similar to the orientation relationship of T1 plates formed within grains. TEM studies showed that these grain boundary T1 plates react readily in moist air. As a result of the localized dissolution, the Cu-rich clusters form onto T1, which is consistent with the localized dissolution behavior observed in nanocrystalline S phase in Al-Cu-Mg.


1988 ◽  
Vol 116 ◽  
Author(s):  
Peng-Heng Chang

AbstractEpitaxial regrowth of gold film on Si as a result of Au/Si eutectic reaction and epitaxial aluminum spikes forming at IC contacts during sintering have been investigated by transmission electron microscopy (TEM). For gold film on Si, three types of epitaxy were observed: (1) the crystal structures of the two lattices are exactly the same, (2) the two structures have the orientation relationship of Au(111)//Si(111) and Au[132]//Si[231] and (3) 20° misorientation from the relationship in (2). Two orientation relationships were observed in the case of Al spike in Si: (1) Al[011]//Si[123] and Al(200)//Si(11), (2) Al[001]//Si[112] and 2° misorientation between Al(200) and Si(111). Possible mechanisms are proposed to explained the observed epitaxial growth.


2005 ◽  
Vol 502 ◽  
pp. 163-168 ◽  
Author(s):  
Rimi Nishio ◽  
Toyohiko J. Konno ◽  
Satoshi Semboshi

Phase separation behaviors of a quenched Cu-3.0at%Ti alloy, as well as crystallographic structures of Cu-20.7at%Ti alloy have been studied using transmission electron microscopy. The furnacecooled Cu-20.7at%Ti alloy are composed of a-Cu4Ti (Ni4Mo-type) and b-Cu4Ti (Au4Zr-type) with the orientation relationship of (011)a//(110)b, [100]a//[001]b. As-quenched Cu-3.0at%Ti alloy showed a modulated structure with the modulation length of about 4 nm. When aged at 723K for 8 hr, the a-Cu4Ti phase emerges within the modulated or tweed-like microstructure. Prolonged aging results in the growth of the a-Cu4Ti particles and the loss of coherency. It is likely that asquenched Cu-3.0at%Ti alloy decomposes spinodally at 723K, followed by polymorphous ordering; though the present study did not exclude, as an alternative path, a decomposition mechanism based on the catastrophic nucleation.


2001 ◽  
Vol 7 (S2) ◽  
pp. 1254-1255
Author(s):  
Alfredo J. Tolley ◽  
Esteban A. Sanchez

The high temperature equilibrium β phase in Cu-based alloys has a disordexed bcc structure. Its stability at high temperatures is due to the large amplitude ﹛0 ζ ζ)﹜ <0 ζ ζ> soft mode which provides a large vibrational entropy. This stability decreases with temperature as the entropy term in the Gibbs free energy becomes smaller. However, by quenching it is possible to retain the β phase avoiding decomposition by diffusion controlled transformations. in ternary β phase Cu-Zn- Al alloys, ion irradiation at room temperature has been reported to induce a phase transformation to a close packed structure or to produce γ phase precipitates. in order to further study the tendency of the β phase to decompose into other phases at room temperature, ion irradiation experiments in binary Cu-Zn single crystals were carried out using a beam of 30 keV Ar ions. The changes in the microstructure were examined using transmission electron microscopy.


2014 ◽  
Vol 922 ◽  
pp. 25-30 ◽  
Author(s):  
Taku Aoki ◽  
Masaki Tahara ◽  
Kenji Goto ◽  
Yoko Yamabe-Mitarai ◽  
Hiroyasu Kanetaka ◽  
...  

The effects of Fe addition on martensitic transformation and mechanical properties of AuTi were investigated in this study. It was found that B2 parent phase is stabilized by the Fe addition and that AuTi can contain at least 20mol%Fe. The lattice deformation strain evaluated from θ-2θ X-ray diffraction analysis (XRD) is not significantly changed by the Fe addition. The decrease in Ms evaluated by differential scanning calorimetry (DSC) is-40K/mol%Fe. Tensile tests revealed that, with increasing Fe content, the yield stress decreases up to about 13mol%Fe, largely increases up to 15mol%Fe and then decreases gradually. By taking into account XRD and DSC results, these behaviors are judged to correspond to reorientation of martensite variants, stress induced martensitic transformation and slip deformation of parent phase, respectively. The values of dσSIMT/dCFe and dσSIMT/dT are evaluated to be-170MPa/mol%Fe and-4.3MPa/K, respectively. The elongation is degraded with increasing Fe content from 8% in AuTi (0mol%Fe, martensite phase) to 2% in AuTi-20mol%Fe (parent phase) depending on the apparent phase.


Author(s):  
S. Mahajan ◽  
M. R. Pinnel ◽  
J. E. Bennett

The microstructural changes in an Fe-Co-V alloy (composition by wt.%: 2.97 V, 48.70 Co, 47.34 Fe and balance impurities, such as C, P and Ni) resulting from different heat treatments have been evaluated by optical metallography and transmission electron microscopy. Results indicate that, on air cooling or quenching into iced-brine from the high temperature single phase ϒ (fcc) field, vanadium can be retained in a supersaturated solid solution (α2) which has bcc structure. For the range of cooling rates employed, a portion of the material appears to undergo the γ-α2 transformation massively and the remainder martensitically. Figure 1 shows dislocation topology in a region that may have transformed martensitically. Dislocations are homogeneously distributed throughout the matrix, and there is no evidence for cell formation. The majority of the dislocations project along the projections of <111> vectors onto the (111) plane, implying that they are predominantly of screw character.


Author(s):  
A. Kosiara ◽  
J. W. Wiggins ◽  
M. Beer

A magnetic spectrometer to be attached to the Johns Hopkins S. T. E. M. is under construction. Its main purpose will be to investigate electron interactions with biological molecules in the energy range of 40 KeV to 100 KeV. The spectrometer is of the type described by Kerwin and by Crewe Its magnetic pole boundary is given by the equationwhere R is the electron curvature radius. In our case, R = 15 cm. The electron beam will be deflected by an angle of 90°. The distance between the electron source and the pole boundary will be 30 cm. A linear fringe field will be generated by a quadrupole field arrangement. This is accomplished by a grounded mirror plate and a 45° taper of the magnetic pole.


Author(s):  
G. Cliff ◽  
M.J. Nasir ◽  
G.W. Lorimer ◽  
N. Ridley

In a specimen which is transmission thin to 100 kV electrons - a sample in which X-ray absorption is so insignificant that it can be neglected and where fluorescence effects can generally be ignored (1,2) - a ratio of characteristic X-ray intensities, I1/I2 can be converted into a weight fraction ratio, C1/C2, using the equationwhere k12 is, at a given voltage, a constant independent of composition or thickness, k12 values can be determined experimentally from thin standards (3) or calculated (4,6). Both experimental and calculated k12 values have been obtained for K(11<Z>19),kα(Z>19) and some Lα radiation (3,6) at 100 kV. The object of the present series of experiments was to experimentally determine k12 values at voltages between 200 and 1000 kV and to compare these with calculated values.The experiments were carried out on an AEI-EM7 HVEM fitted with an energy dispersive X-ray detector.


Ramus ◽  
2007 ◽  
Vol 36 (1) ◽  
pp. 25-38 ◽  
Author(s):  
Myles Lavan

(BJ6.350)Those who discard their weapons and surrender their persons, I will let live. Like a lenient master in a household, I will punish the incorrigible but preserve the rest for myself.So ends Titus' address to the embattled defenders of Jerusalem in the sixth book of Josephus'Jewish War(6.328-50). It is the most substantial instance of communication between Romans and Jews in the work. Titus compares himself to the master of a household and the Jewish rebels to his slaves. Is this how we expect a Roman to describe empire? If not, what does it mean for our understanding of the politics of Josephus' history? The question is particularly acute given that this is not just any Roman but Titus himself: heir apparent and, if we believe Josephus, the man who read and approved this historical account. It is thus surprising that, while the speeches of Jewish advocates of submission to Rome such as Agrippa II (2.345-401) and Josephus himself (5.362-419) have long fascinated readers, Titus' speech has received little or no attention. Remarkably, it is not mentioned in any of three recent collections of essays on Josephus. This paper aims to highlight the rhetorical choices that Josephus has made in constructing this voice for Titus—particularly his self-presentation as master—and the interpretive questions these raise for his readers. It should go without saying that the relationship of this text to anything that Titus may have said during the siege is highly problematic. (Potentially more significant, but unfortunately no less speculative, is the question of how it might relate to any speech recorded in the commentaries of Vespasian and Titus that Josephus appears to have used as a source.) What we have is a Josephan composition that is embedded in the broader narrative of theJewish War.


1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films


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