Low-Voltage Scanning Electron Microscope (LVSEM) with a Single-Polepiece Lens

Author(s):  
I. Müllerová ◽  
M. Lenc

The advantages of the LV SEM are well known. Recently a lot of interesting results from this field were presented which were obtained thanks to development of field emission guns and to the enourmous progress in the computation techniques in electron optics.One of the simplest arrangements of the LVSEM is shown in Figure 1. The Tesla SEM BS 350 with a field emission gun and the TF-W/100-Zr cathode was used for our experiment. The gun provides 10−10 A current in the diffraction limited spot (for the angular density 0.20mA sr−1). If a potential Usp is applied to the specimen the energy E of the electrons that strike the specimen is Ep-eUsp (Ep-primary beam energy, e-elementary charge). The produced secondary (SE) and backscattered (BSE) electrons are accelerated towards the semiconductor detector by the electrostatic field and their energy spectrum extends from eUsp to Ep. The final energy of the SE and BSE can then be sufficient for achieving a reasonable amplification of the semiconductor detector which is directly proportional to the energy of the electrons that strike the detector. We calculated optical properties for a combination of the electrostatic and magnetic lenses of the basic geometry shown in Figure 1 and for an arrangement with the single polepiece lens shown in Figure 2. We particularly investigated coefficients of the chromatic (Cc) and spherical (Cs) aberrations as functions of the ratio of the primary beam energy to the energy of the electrons that strike the specimen Ep/E for some optimum position of the specimen, electropstatic and magnetic field. Our results are shown in Table 1. The coefficients Cs and Cc do not change with the energy Epor E if the ratio Ep/E is maitained the same and aberrations are lower for larger ratios Ep/E, so that the influence of the contribution of the electrostatic lens aberrations is negligible for our geometry. For example, if we require a resolution limit r=2nm and an energy of the electrons that strike the specimen E=300eV, it is possible to calculate that the coefficient of the aberrations must be Cs<0.21mm and Cc<0.14mm for an energy width AE=0.2eV, so that we need the ratio Ep/E≥150 for the arrangement shown in Figure 1 (i.e.Ep≥45keV) and Ep/E≥33 for the arrangement shown in Figure 2 (i.e.Ep≥10keV).The advantages of the combination of the magnetic lens with the electrostatic cathode lens for the high resolution very low energy electron microscopy are well known . We assume that for the LVSEM only a medium electrostatic field strength is admitted at the specimen surface. Nevertheless, our experimental arrangements should certainly be optimized in the future.

Author(s):  
J. Orloff

Low voltage SEM is an increasingly important technique for examining specimens which can be damaged by high energy electrons or which are insulators. It is particularly useful for the study of semiconductor devices and a number of specialized methods have been developed. These include voltage contrast SEM, e-beam induced conductivity, stroboscopic SEM, inspection and line width measurement. Low energy is necessary because many circuit components, especially MOS devices are easily damaged. Moreover, insulating components of circuits, including passivation layers, dictate beam energies ≲ 1 keV in order to avoid electrical charging.The current density and brightness of a thermionic cathode are proportional to the voltage of the cathode with respect to the specimen; consequently the current which can be focused into a given beam diameter decreases with beam energy. In contrast, the current density and brightness of a field emission cathode depend on the electric field at the emitter surface, so that by the appropriate choice of gun geometry, high brightness can be attained at low beam energy.


1997 ◽  
Vol 3 (S2) ◽  
pp. 1215-1216 ◽  
Author(s):  
J.Liu

Nanometer-resolution surface imaging by secondary electrons (SE) is now routinely obtainable in field-emission SEM or STEM microscopes. The resolution in SE images obtained in a modern field-emission (FE) SEM is still limited by the electron probe size although the localization of the SE generation processes sets the ultimate resolution limit that will be achievable in SE images. The combination of a FE gun with improved probe forming lenses and detection systems makes it possible to image nanometer-scale surface features at low voltages. Because of the reduced electron beam range and the new SE detection system, image contrast formation in low voltage FE-SEMs is quite different to that in conventional SEMs. In a FE-SEM, SEs are detected through the combination of a strong magnetic field of the lens and a weak electrostatic extraction field of the detector. The detection efficiency varies with the energy of the emitted SEs.


2003 ◽  
Vol 11 (6) ◽  
pp. 26-29 ◽  
Author(s):  
Michael D.G. Steigerwald

LEO's field emission scanning electron microscopes are all based an the “GEMINI” principle as shown in figure 1. In order to reduce aberrations and sensitivity to interfering stray-fields the electron optical column possesses a positively biased booster that shifts the energy of the primary electrons. The incident beam is focussed by a combination of a magnetic lens with an axial gap that avoids field leakage to the specimen and an electrostatic retarding lens formed by the beam booster together with the grounded pole piece cap. Shortly before the electrons hit the specimen they are decelerated down to the desired primary energy.


Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.


Author(s):  
A. V. Crewe ◽  
J. Wall ◽  
L. M. Welter

A scanning microscope using a field emission source has been described elsewhere. This microscope has now been improved by replacing the single magnetic lens with a high quality lens of the type described by Ruska. This lens has a focal length of 1 mm and a spherical aberration coefficient of 0.5 mm. The final spot size, and therefore the microscope resolution, is limited by the aberration of this lens to about 6 Å.The lens has been constructed very carefully, maintaining a tolerance of + 1 μ on all critical surfaces. The gun is prealigned on the lens to form a compact unit. The only mechanical adjustments are those which control the specimen and the tip positions. The microscope can be used in two modes. With the lens off and the gun focused on the specimen, the resolution is 250 Å over an undistorted field of view of 2 mm. With the lens on,the resolution is 20 Å or better over a field of view of 40 microns. The magnification can be accurately varied by attenuating the raster current.


Author(s):  
S. J. Krause ◽  
W.W. Adams ◽  
S. Kumar ◽  
T. Reilly ◽  
T. Suziki

Scanning electron microscopy (SEM) of polymers at routine operating voltages of 15 to 25 keV can lead to beam damage and sample image distortion due to charging. Imaging polymer samples with low accelerating voltages (0.1 to 2.0 keV), at or near the “crossover point”, can reduce beam damage, eliminate charging, and improve contrast of surface detail. However, at low voltage, beam brightness is reduced and image resolution is degraded due to chromatic aberration. A new generation of instruments has improved brightness at low voltages, but a typical SEM with a tungsten hairpin filament will have a resolution limit of about 100nm at 1keV. Recently, a new field emission gun (FEG) SEM, the Hitachi S900, was introduced with a reported resolution of 0.8nm at 30keV and 5nm at 1keV. In this research we are reporting the results of imaging coated and uncoated polymer samples at accelerating voltages between 1keV and 30keV in a tungsten hairpin SEM and in the Hitachi S900 FEG SEM.


Author(s):  
William P. Wergin ◽  
Eric F. Erbe ◽  
Terrence W. Reilly

Although the first commercial scanning electron microscope (SEM) was introduced in 1965, the limited resolution and the lack of preparation techniques initially confined biological observations to relatively low magnification images showing anatomical surface features of samples that withstood the artifacts associated with air drying. As the design of instrumentation improved and the techniques for specimen preparation developed, the SEM allowed biologists to gain additional insights not only on the external features of samples but on the internal structure of tissues as well. By 1985, the resolution of the conventional SEM had reached 3 - 5 nm; however most biological samples still required a conductive coating of 20 - 30 nm that prevented investigators from approaching the level of information that was available with various TEM techniques. Recently, a new SEM design combined a condenser-objective lens system with a field emission electron source.


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