UHV-TEM/REM Study of Palladium Silicide Islands Grown on Silicon (111) 7×7 Surface

2001 ◽  
Vol 7 (S2) ◽  
pp. 318-319
Author(s):  
M. Takeguchi ◽  
K. Mitsuishi ◽  
J. Liu ◽  
Q. Zhang ◽  
M. Tanaka ◽  
...  
Keyword(s):  
Electron Beam ◽  
Functional Materials ◽  
Side Surface ◽  
Beam Direction ◽  
Self Organized ◽  
Reflection Electron Microscopy ◽  
Rectangular Specimen ◽  
Palladium Silicide ◽  
Transmission And Reflection

The growth of self-organized nanoislands and nanowires on a substrate has been extensively studied with a view to fabricating the new functional materials and advanced electric devices. in the present work, Pd silicide islands and wires grown on Si (111) 7x77×7surface were observed in situ by ultrahigh vacuum transmission and reflection electron microscopy (UHV-TEM/REM). Pd was deposited on Si (111) 7×7 surface at about 700 K using an electron beam evaporator attached to the column of a UHV microscope. Two kinds of specimens were prepared: a <111> oriented rectangular specimen with a thin area, whose (111) top surface was observed by plan viewed TEM, and a <110> oriented bulk rectangular specimen, whose (111) side surface was observed by REMFigure la shows a REM image of Si (111) 7×7 surface. An incident electron beam is directed from the top to the bottom of the figure, which is foreshortened in the beam direction.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

In situ REM imaging of surface processes on ceramic bulk crystals from 300 to 1670 K in a conventional TEM

1991 ◽  
Vol 49 ◽  
pp. 660-661
Author(s):  
Z. L. Wang ◽  
J. Bentley
Keyword(s):  
High Temperatures ◽  
Image Resolution ◽  
Atomic Processes ◽  
Crystal Surfaces ◽  
Beam Radiation ◽  
Surface Areas ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Gas Reactions

Studying the behavior of surfaces at high temperatures is of great importance for understanding the properties of ceramics and associated surface-gas reactions. Atomic processes occurring on bulk crystal surfaces at high temperatures can be recorded by reflection electron microscopy (REM) in a conventional transmission electron microscope (TEM) with relatively high resolution, because REM is especially sensitive to atomic-height steps.Improved REM image resolution with a FEG: Cleaved surfaces of a-alumina (012) exhibit atomic flatness with steps of height about 5 Å, determined by reference to a screw (or near screw) dislocation with a presumed Burgers vector of b = (1/3)<012> (see Fig. 1). Steps of heights less than about 0.8 Å can be clearly resolved only with a field emission gun (FEG) (Fig. 2). The small steps are formed by the surface oscillating between the closely packed O and Al stacking layers. The bands of dark contrast (Fig. 2b) are the result of beam radiation damage to surface areas initially terminated with O ions.

A very rapid in situ Kikuchi technique to determine relative crystal misorientation

1988 ◽  
Vol 46 ◽  
pp. 830-831
Author(s):  
J. I. Bennetch
Keyword(s):  
Electron Beam ◽  
Analytical Techniques ◽  
Superplastic Forming ◽  
The Other ◽  
Kikuchi Pattern ◽  
Kikuchi Line ◽  
Line Analysis

In a recent study of the superplastic forming (SPF) behavior of certain Al-Li-X alloys, the relative misorientation between adjacent (sub)grains proved to be an important parameter. It is well established that the most accurate way to determine misorientation across boundaries is by Kikuchi line analysis. However, the SPF study required the characterization of a large number of (sub)grains in each sample to be statistically meaningful, a very time-consuming task even for comparatively rapid Kikuchi analytical techniques.In order to circumvent this problem, an alternate, even more rapid in-situ Kikuchi technique was devised, eliminating the need for the developing of negatives and any subsequent measurements on photographic plates. All that is required is a double tilt low backlash goniometer capable of tilting ± 45° in one axis and ± 30° in the other axis. The procedure is as follows. While viewing the microscope screen, one merely tilts the specimen until a standard recognizable reference Kikuchi pattern is centered, making sure, at the same time, that the focused electron beam remains on the (sub)grain in question.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

SREM observation of the interaction between the in-situ deposited Pd small particles and MgO cleavage surface

1986 ◽  
Vol 44 ◽  
pp. 382-383
Author(s):  
H.-J. Ou
Keyword(s):  
Electron Microscopy ◽  
Small Particle ◽  
Small Particles ◽  
Cleavage Surface ◽  
Metallic Particles ◽  
Microscopy Technique ◽  
Ceramic Surfaces ◽  
Reflection Electron Microscopy ◽  
New Perspective

The understanding of the interactions between the small metallic particles and ceramic surfaces has been studied by many catalyst scientists. We had developed Scanning Reflection Electron Microscopy technique to study surface structure of MgO hulk cleaved surface and the interaction with the small particle of metals. Resolutions of 10Å has shown the periodic array of surface atomic steps on MgO. The SREM observation of the interaction between the metallic particles and the surface may provide a new perspective on such processes.

In-Situ Dual Beam (FIBSEM) Techniques for Probe Pad Deposition and Dielectric Integrity Inspection in 0.2 μm Technology DRAM Single Cells

1999 ◽  
Author(s):  
Gunnar Zimmermann ◽  
Richard Chapman
Keyword(s):  
Electron Beam ◽  
Single Cell ◽  
Single Cells ◽  
Ion Beam ◽  
Gate Oxide ◽  
Ion Milling ◽  
Dual Beam ◽  
Sem Imaging ◽  
Innovative Techniques

Abstract Dual beam FIBSEM systems invite the use of innovative techniques to localize IC fails both electrically and physically. For electrical localization, we present a quick and reliable in-situ FIBSEM technique to deposit probe pads with very low parasitic leakage (Ipara &lt; 4E-11A at 3V). The probe pads were Pt, deposited with ion beam assistance, on top of highly insulating SiOx, deposited with electron beam assistance. The buried plate (n-Band), p-well, wordline and bitline of a failing and a good 0.2 μm technology DRAM single cell were contacted. Both cells shared the same wordline for direct comparison of cell characteristics. Through this technique we electrically isolated the fail to a single cell by detecting leakage between the polysilicon wordline gate and the cell diffusion. For physical localization, we present a completely in-situ FIBSEM technique that combines ion milling, XeF2 staining and SEM imaging. With this technique, the electrically isolated fail was found to be a hole in the gate oxide at the bad cell.

In situ TEM observation of novel chemical evolution of MnBr2 catalyzed by Cu under electron beam irradiation

2017 ◽  
Vol 686 ◽  
pp. 44-48 ◽  
Author(s):  
Wei Wang ◽  
Xianwei Bai ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
Yuan Yao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Evolution ◽  
Electron Beam Irradiation ◽  
In Situ Tem ◽  
Beam Irradiation
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