Metastable Metallic Phase of a Bilayer Blue Phosphorene Induced by Interlayer Bonding and Intralayer Charge Redistributions

Author(s):  
Jeonghwan Ahn ◽  
Iuegyun Hong ◽  
Gwangyoung Lee ◽  
Hyeondeok Shin ◽  
Anouar Benali ◽  
...  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.


1991 ◽  
Vol 1 (10) ◽  
pp. 1365-1370 ◽  
Author(s):  
N. D. Kush ◽  
V. N. Laukhin ◽  
A. I. Schegolev ◽  
E. B. Yagubskii ◽  
E. Yu. Alikberova ◽  
...  

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-267-C4-270 ◽  
Author(s):  
B. BATLOGG ◽  
A. SCHLEGEL ◽  
P. WACHTER

Author(s):  
E. A. Zuluaga-Hernandez ◽  
M. E. Mora-Ramos ◽  
E. Flórez ◽  
J. D. Correa

2021 ◽  
pp. 149363
Author(s):  
Daughty John ◽  
Bijoy Nharangatt ◽  
Srihari Madhav Kastaur ◽  
Raghu Chatanathodi

2021 ◽  
Vol 31 (11) ◽  
pp. 2010893
Author(s):  
Xiaoqing Tian ◽  
Jingyi Duan ◽  
Yadong Wei ◽  
Naixing Feng ◽  
Xiangrong Wang ◽  
...  
Keyword(s):  

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1649
Author(s):  
Gemechis D. Degaga ◽  
Sumandeep Kaur ◽  
Ravindra Pandey ◽  
John A. Jaszczak

Vertically stacked, layered van der Waals (vdW) heterostructures offer the possibility to design materials, within a range of chemistries and structures, to possess tailored properties. Inspired by the naturally occurring mineral merelaniite, this paper studies a vdW heterostructure composed of a MoS2 monolayer and a PbS bilayer, using density functional theory. A commensurate 2D heterostructure film and the corresponding 3D periodic bulk structure are compared. The results find such a heterostructure to be stable and possess p-type semiconducting characteristics. Due to the heterostructure’s weak interlayer bonding, its carrier mobility is essentially governed by the constituent layers; the hole mobility is governed by the PbS bilayer, whereas the electron mobility is governed by the MoS2 monolayer. Furthermore, we estimate the hole mobility to be relatively high (~106 cm2V−1s−1), which can be useful for ultra-fast devices at the nanoscale.


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