Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

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ALLOYING OF THIN Ag AND Au FILMS ON Pd(111) STUDIED BY HIGH-RESOLUTION PHOTOELECTRON SPECTROSCOPY OF SURFACE STATES

Surface Review and Letters ◽

10.1142/s0218625x96002722 ◽

1996 ◽

Vol 03 (05n06) ◽

pp. 1783-1789 ◽

Cited By ~ 5

Author(s):

R. FISCHER ◽

TH. FAUSTER

Keyword(s):

High Resolution ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Three Dimensional ◽

Surface States ◽

Surface Region ◽

Layer Growth ◽

Alloy Formation ◽

Layer By Layer ◽

Island Growth

Alloy formation by annealing of thin Ag and Au films on Pd(111) is studied by high-resolution ultraviolet and two-photon photoelectron spectroscopy of surface states. Changes in the composition of the top layer of the surface alloys are reflected in the energy of the surface states. Above an annealing temperature of 500 K on both systems, the crystal-induced surface state shifts continuously from the occupied state of the adsorbate to the unoccupied state of the substrate. The continuous shift reflects the variable composition of the alloys in the surface region which depends on the initial coverage and the annealing temperature. The spectroscopy of the unoccupied image states permits the investigation of growth and morphology of deposited metal layers. Three-dimensional island growth, layer-by-layer growth, and surface alloy formation with metastable surface configurations and diffusion of the overlayer material into the bulk are identified.

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Nucleation of Disorder in Fe3Al Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100061574 ◽

1967 ◽

Vol 25 ◽

pp. 312-313

Author(s):

P. R. Swann ◽

W. R. Duff ◽

R. M. Fisher

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Annealing Temperature ◽

Antiphase Domain ◽

Effect Of Temperature ◽

Domain Structures ◽

Transmission Electron ◽

Domain Boundaries ◽

Higher Temperature ◽

The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087124 ◽

1991 ◽

Vol 49 ◽

pp. 562-563

Author(s):

F.-R. Chen ◽

T. L. Lee ◽

L. J. Chen

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Thin Films ◽

Diffraction Pattern ◽

Annealing Temperature ◽

Lattice Mismatch ◽

Si Substrate ◽

Metal Thin Films ◽

Transmission Electron ◽

Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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HREM observations of internetallic alloy formation in Pt-Sn thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100120667 ◽

1992 ◽

Vol 50 (1) ◽

pp. 52-53

Author(s):

D.C. Dufner

Keyword(s):

Thin Films ◽

Cross Sections ◽

Carbon Films ◽

Solid State Reactions ◽

Alloy Formation ◽

Reaction Behavior ◽

Interdiffusion Process ◽

Compositional Changes ◽

General Goal ◽

Film Method

The general goal of this research is to clarify mechanisms of solid state reactions at the atomic level as a step in the rationalization of macroscopic reaction behavior in solids. A study of intermetallic alloy formation resulting from interdiffusion of metals in thin films can be made by HREM. In this work, reactions between Pt and Sn in thin films are studied to elucidate mechanisms for structural and compositional changes during the interdiffusion process.Thin films of Pt and Sn used in this study were prepared by the two-film method introduced by Shiojiri. Few hundred angstroms of Pt were vacuum-deposited onto holey carbon films mounted on TEM grids. Sn films with an average thickness of 200Å were created by evaporation at rates of 15-30 Å/sec onto air-cleaved KBr substrates. The Sn films were wet-stripped and collected on the holey Pt grids. Figure 1 shows a cross-section schematic of a Pt-Sn couple. While this two-film arrangement did not allow observations of the actual reaction interface, microtomy was used to produce cross-sections.

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Structure and composition of metal particles in Pt-Sn/Al2O3 bimetallic catalysts

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100174527 ◽

1990 ◽

Vol 48 (4) ◽

pp. 278-279

Author(s):

A. Sachdev ◽

J. Schwank

Keyword(s):

Bimetallic Catalysts ◽

Bimetallic Catalyst ◽

Size Structure ◽

High Surface ◽

High Surface Area ◽

Metal Particles ◽

Alloy Formation ◽

Particle Size Range ◽

Oxide Supports ◽

Petroleum Fractions

Platinum - tin bimetallic catalysts have been primarily utilized in the chemical industry in the catalytic reforming of petroleum fractions. In this process the naphtha feedstock is converted to hydrocarbons with higher octane numbers and high anti-knock qualities. Most of these catalysts contain small metal particles or crystallites supported on high surface area insulating oxide supports. The determination of the structure and composition of these particles is crucial to the understanding of the catalytic behavior. In a bimetallic catalyst it is important to know how the two metals are distributed within the particle size range and in what way the addition of a second metal affects the size, structure and composition of the metal particles. An added complication in the Pt-Sn system is the possibility of alloy formation between the two elements for all atomic ratios.

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Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154998 ◽

1989 ◽

Vol 47 ◽

pp. 604-605

Author(s):

P. Roitman ◽

B. Cordts ◽

S. Visitserngtrakul ◽

S.J. Krause

Keyword(s):

High Temperature ◽

Annealing Temperature ◽

Silicon On Insulator ◽

High Dose ◽

High Temperature Annealing ◽

High Current ◽

Defect Reduction ◽

Annealing Step ◽

Multiple Cycle ◽

Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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