Improved Room-Temperature Vulcanized (RTV) Silicone Elastomers as Integrated Circuit (IC) Encapsulants

1982 ◽  
pp. 171-183 ◽  
Author(s):  
CHING-PING WONG
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Silicone Elastomers

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

scholarly journals E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 617
Author(s):  
Li-Fang Jia ◽  
Lian Zhang ◽  
Jin-Ping Xiao ◽  
Zhe Cheng ◽  
De-Feng Lin ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Supply Voltage ◽  
High Input ◽  
Smart Power ◽  
Input Noise ◽  
Power Integrated Circuit ◽  
Different Temperatures ◽  
Device Technology ◽  
Si Wafer

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.

Rapid, metal-free room temperature vulcanization produces silicone elastomers

2012 ◽  
Vol 51 (3) ◽  
pp. 644-652 ◽  
Author(s):  
Amanda S. Fawcett ◽  
John B. Grande ◽  
Michael A. Brook
Keyword(s):  
Room Temperature ◽  
Silicone Elastomers ◽  
Metal Free

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

Diffusion and Adhesion of Cu/Parylene

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Yang ◽  
S. Dabral ◽  
L. You ◽  
H. Bakhrut ◽  
J. F. McDonald ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Unit Length ◽  
High Vacuum ◽  
Diffusion Barriers ◽  
Cu Metallization ◽  
Dry Adhesion ◽  
Diffusion Characteristics

ABSTRACTThe combination of Cu and parylene (poly-p-xylylene) for metallization and insulator in integrated circuit or packaging multilayer interconnection systems gives one of the lowest resistance and capacitance values per unit length. In this paper we present a detailed study of the diffusion characteristics of Cu in parylene-n (PA-n) substrates. PA-n was vapor-deposited and Cu metallization performed at room temperature using the Partially Ionized Beam (PIB) technique. Rutherford Backscattering (RBS) technique has been used to study the diffusion of Cu in PA-n substrate after annealing the samples to elevated temperatures in vacuum. We found no sign of Cu diffusion after the Cu/PA-n sample was annealed at 300°C for 6 hours. Diffusion occurs at 350 °C. However, preannealed PA-n substrate prior to Cu deposition can prevent the diffusion even at a temperatures above 350°C. Also we found that amorphous carbon and chromium are good diffusion barriers of Cu on PA-n. The dry adhesion between PA-n deposited on Al, Cu and Ag was found to be good. The adhesion of these PIB deposited metals on PA-n in high vacuum was also very good.

Sectioning Integrated Circuit Ceramic Packages for Improved Electromigration Failure Analysis

2005 ◽  
Author(s):  
Bryan Tracy ◽  
Jonnie Barragan ◽  
Ilana Grimberg ◽  
Efrat Raz
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Preparation Method ◽  
State Of The Art ◽  
Organic Substrate ◽  
Sample Preparation Method ◽  
Area Of Interest ◽  
Automatic Polishing

Abstract This article presents a step-by-step sample preparation method for the cross sectioning of silicon die in a ceramic package without the need for die removal or epoxy encapsulation. The sample preparation includes sawing the package, sample mounting to the polishing stub, and FIB cutting the area of interest and SEM Exam. In addition, a discussion on an automatic polishing method is included. This method is applicable for a broad range of silicon (Si) die package technologies and has also been successfully used on "TSOP" and state-of-the-art microprocessor packages which include the "organic" substrate, the Si die, and the massive copper die lid. The entire failure analysis is done at room temperature, eliminating any questions about sample preparation artifacts. Because the sample is imaged in the SEM at 90 degrees, much improved layer detail and voids microstructure is present in the final image.

Spray-deposited metal-chalcogenide photodiodes for low cost infrared imagers

MRS Advances ◽  
2020 ◽  
Vol 5 (39) ◽  
pp. 2013-2022
Author(s):  
Tommy O. Boykin ◽  
Nagendra Dhakal ◽  
Javaneh Boroumand ◽  
F. Javier Gonzalez ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Flat Panel Display ◽  
Flat Panel ◽  
Large Format ◽  
Metal Chalcogenide ◽  
Deposited Metal ◽  
Reduced Scale

AbstractLow-cost, light-weight, low-power, large-format, room-temperature, mid-wave infrared (MWIR) detectors are needed for reduced-scale aircraft. An opportunity, suggested by direct-read X-radiography systems, is the use of thin film transistor (TFT) array as read-out integrated circuit (ROIC) for low-cost sensors deposited directly and unpatterned onto this ROIC. TFTs have already been thoroughly optimized for power, weight, large-format, and cost by the flat-panel-display industry. We present experimental investigation of aqueous-spray-deposited, mid-wave-IR, metal-chalcogenide heterojunction CdS/PbS photodiodes for this application. Measured responsivity, detectivity D*, and photoresponse spectra are reported.

Preparation and Characterization of Elastomers Based on Polydimethylsiloxane/Poly(methyl methacrylate) Blends

2012 ◽  
Vol 535-537 ◽  
pp. 1193-1196
Author(s):  
Nai Qiang Zhang ◽  
Jian Dong ◽  
Hong Yu Chen
Keyword(s):  
Methyl Methacrylate ◽  
Room Temperature ◽  
Radical Copolymerization ◽  
Cross Linking ◽  
Scanning Calorimetry ◽  
Silicone Elastomers ◽  
Poly Methyl Methacrylate ◽  
Dsc Measurements ◽  
Pmma Blends

Polydimethylsiloxane/poly (methyl methacrylate) (PDMS/PMMA) blends were prepared by radical copolymerization of methyl methacrylate (MMA) and divinylbenzene (DVB) in the presence of PDMS. Elastomers based on PDMS/PMMA blends were formed by cross-linking PDMS with methyltriethoxysilane (MTES). Mechanical property measurements show that the elastomers thus formed exhibit superior tensile strength with respect to general room temperature vulcanized silicone elastomers containing silica. Moreover, investigations were carried out on the elastomers by extraction, scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) measurements. SEM shows that the elastomer has a microphase-separated structure consisting of dispersed PMMA domains within a continuous PDMS matrix. DSC result shows that the elastomers display two glass transition temperatures and confirm the incompatible nature of PDMS and PMMA.

Multiferroic Memory: A Disruptive Technology or Future Technology?

2012 ◽  
Vol 189 ◽  
pp. 1-14 ◽  
Author(s):  
Ashok Kumar ◽  
Nora Ortega ◽  
Sandra Dussan ◽  
Shalini Kumari ◽  
Dilsom Sanchez ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Electric Fields ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Random Access ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Disruptive Technology

The term "Multiferroic" is coined for a material possessing at least two ferroic orders in the same or composite phase (ferromagnetic, ferroelectric, ferroelastic); if the first two ferroic orders are linearly coupled together it is known as a magnetoelectric (ME) multiferroic. Two kinds of ME multiferroic memory devices are under extensive research based on the philosophy of "switching of polarization by magnetic fields and magnetization by electric fields." Successful switching of ferroic orders will provide an extra degree of freedom to create more logic states. The "switching of polarization by magnetic fields" is useful for magnetic field sensors and for memory elements if, for example, polarization switching is via a very small magnetic field from a coil underneath an integrated circuit. The electric control of magnetization is suitable for nondestructive low-power, high-density magnetically read and electrically written memory elements. If the system possesses additional features, such as propagating magnon (spin wave) excitations at room temperature, additional functional applications may be possible. Magnon-based logic (magnonic) systems have been initiated by various scientists, and prototype devices show potential for future complementary metal oxide semiconductor (CMOS) technology. Discovery of high polarization, magnetization, piezoelectric, spin waves (magnon), magneto-electric, photovoltaic, exchange bias coupling, etc. make bismuth ferrite, BiFeO3, one of the widely investigated materials in this decade. Basic multiferroic features of well known room temperature single phase BiFeO3in bulk and thin films have been discussed. Functional magnetoelectric (ME) properties of some lead-based solid solution perovskite multiferroics are presented and these systems also have a bright future. The prospects and the limitations of the ME-based random access memory (MERAM) are explained in the context of recent discoveries and state of the art research.

scholarly journals Tannic Acid as a Natural Crosslinker for Catalyst-Free Silicone Elastomers From Hydrogen Bonding to Covalent Bonding

2021 ◽  
Vol 9 ◽  
Author(s):  
Sen Kong ◽  
Rui Wang ◽  
Shengyu Feng ◽  
Dengxu Wang
Keyword(s):  
Hydrogen Bonding ◽  
Tannic Acid ◽  
Room Temperature ◽  
Covalent Bonding ◽  
Processing Technique ◽  
Hydrophobic Property ◽  
Silicone Elastomers ◽  
Good Thermal Stability ◽  
Catalyst Free ◽  
Base Polymer

The construction of silicone elastomers crosslinked by a natural crosslinker under a catalyst-free method is highly desirable. Herein we present catalyst-free silicone elastomers (SEs) by simply introducing tannic acid (TA) as a natural crosslinker when using poly (aminopropylmethylsiloxane-co-dimethylsiloxane) (PAPMS) as the base polymer. The crosslinked bonding of these SEs can be easily changed from hydrogen bonding to covalent bonding by altering the curing reaction from room temperature to heating condition. The formability and mechanical properties of the SEs can be tuned by altering various factors, including processing technique, the amount of TA and aminopropyl-terminated polydimethylsiloxane, the molecular weight and -NH2 content of PAPMS, and the amount of reinforcing filler. The hydrogen bonding was proved by the reversible crosslinking of the elastomers, which can be gradually dissolved in tetrahydrofuran and re-formed after removing the solvent. The covalent bonding was proved by a model reaction of catechol and n-decylamine and occurred through a combination of hydroxylamine reaction and Michael addition reaction. These elastomers exhibit good thermal stability and excellent hydrophobic property and can bond iron sheets to hold the weight of 500 g, indicating their promising as adhesives. These results reveal that TA as a natural product is a suitable “green” crosslinker for the construction of catalyst-free silicone elastomers by a simple crosslinking strategy. Under this strategy, TA and more natural polyphenols could be certainly utilized as crosslinkers to fabricate more organic elastomers by selecting amine-containing polymers and further explore their extensive applications in adhesives, sealants, insulators, sensors, and so forth.

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