Diffusion and Adhesion of Cu/Parylene

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Yang ◽  
S. Dabral ◽  
L. You ◽  
H. Bakhrut ◽  
J. F. McDonald ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Unit Length ◽  
High Vacuum ◽  
Diffusion Barriers ◽  
Cu Metallization ◽  
Dry Adhesion ◽  
Diffusion Characteristics

ABSTRACTThe combination of Cu and parylene (poly-p-xylylene) for metallization and insulator in integrated circuit or packaging multilayer interconnection systems gives one of the lowest resistance and capacitance values per unit length. In this paper we present a detailed study of the diffusion characteristics of Cu in parylene-n (PA-n) substrates. PA-n was vapor-deposited and Cu metallization performed at room temperature using the Partially Ionized Beam (PIB) technique. Rutherford Backscattering (RBS) technique has been used to study the diffusion of Cu in PA-n substrate after annealing the samples to elevated temperatures in vacuum. We found no sign of Cu diffusion after the Cu/PA-n sample was annealed at 300°C for 6 hours. Diffusion occurs at 350 °C. However, preannealed PA-n substrate prior to Cu deposition can prevent the diffusion even at a temperatures above 350°C. Also we found that amorphous carbon and chromium are good diffusion barriers of Cu on PA-n. The dry adhesion between PA-n deposited on Al, Cu and Ag was found to be good. The adhesion of these PIB deposited metals on PA-n in high vacuum was also very good.

scholarly journals Peculiar Magnetic Features and Superconductivity in Sulfur Doped Amorphous Carbon

2016 ◽  
Author(s):  
Israel Felner
Keyword(s):  
Amorphous Carbon ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Magnetic Behavior ◽  
Protective Atmosphere ◽  
Zero Field ◽  
Magnetic Studies ◽  
High Tc ◽  
Two Phases ◽  
Magnetic States

We report on magnetic studies of inhomogeneous commercial and synthesized amorphous carbon (a-C) and a-C doped with sulfur (a-CS) powders which exhibit (i) peculiar magnetic behavior and (ii) traces of two superconducting (SC) phase ~ Tc=33 and at 65 K. (i) The temperature dependence of zero-field-cooled (ZFC) curves measured up to room temperature show a well distinguish elusive peaks around 50-80 K, their origin is not yet known. These peaks are totally washed-out in the second ZFC sweeps and in the FC branches as well. As a result, in the vicinity of the peaks, the FC curves lie below the ZFC peaks (FC<ZFC), a phenomenon which is rarely observed. These magnetic anomalies are intrinsic properties of a-C and a-CS materials (ii) SC was observed in three different a-C sources: (a) The commercial a-C powder contains 0.21% of sulfur and it is suggested that two different a-CS phases (at 33 and 65 K) are the origin of the two SC states observed. The compositions of these two phases are not yet unknown. The small SC volume fractions of the 33 K phase can be enhanced by a solid reaction with additional sulfur at 250 ºC. (b) The synthesized a-C powder (obtained from decomposition of sucrose) is not SC. However, when mixed with sulfur and heated at 400 ºC under a protective atmosphere, the a-CS powder obtained also show traces of a SC phase at TC= 42 K. (c)The same occurs in a-C thin films. The as-grown films are not SC but a SC phase at Tc = 34 K emerges after the films were reacted with sulfur at elevated temperatures. It is concluded therefore, that all SC phases observed are due to different unknown a-CS phases. Since the a-C and a-CS powders possess SC and magnetic states, we believe that these powders resemble the high TC curates and Fe-As based systems in which the SC and the magnetic states are closed related to each other.

Hard Amorphous Carbon Films Deposited by ArF Pulse Laser Ablation of Graphite at Room Temperature

1992 ◽  
Vol 270 ◽  
Author(s):  
Fulin Xiong ◽  
R. P. H. Chang
Keyword(s):  
Laser Ablation ◽  
Power Density ◽  
Amorphous Carbon ◽  
Laser Power ◽  
Room Temperature ◽  
High Vacuum ◽  
Carbon Films ◽  
Laser Wavelength ◽  
Laser Power Density ◽  
Amorphous Carbon Films

ABSTRACTHard amorphous carbon films have been deposited by ArF pulsed laser ablation of graphite at room temperature, with the laser power density of 5x108 W/cm2. The films prepared in the high vacuum environment possess remarkable diamond-like properties with a hardness up to 38 GPa and an optical energy band gap of 2.4 eV. The properties of the films doped with nitrogen vary with the nitrogen content, but improve interface adhesion, resulting in the extension of the film thickness limit to a greater range. The results suggest that the properties of the laser ablation deposited diamond-like carbon films depend not only on the laser power density, but also strongly on the laser wavelength or photon energy.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Spherulite Structures in a Melt Spun Fe-Ni Austenitic Steel

1985 ◽  
Vol 43 ◽  
pp. 52-53
Author(s):  
G. M. Michal ◽  
T. K. Glasgow ◽  
T. J. Moore
Keyword(s):  
Austenitic Steel ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Large Range ◽  
Amorphous Structure ◽  
Nucleation And Growth ◽  
Ni Alloys ◽  
Melt Spun ◽  
Crystal Fibers ◽  
Rapidly Solidified

Large additions of B to Fe-Ni alloys can lead to the formation of an amorphous structure, if the alloy is rapidly cooled from the liquid state to room temperature. Isothermal aging of such structures at elevated temperatures causes crystallization to occur. Commonly such crystallization pro ceeds by the nucleation and growth of spherulites which are spherical crystalline bodies of radiating crystal fibers. Spherulite features were found in the present study in a rapidly solidified alloy that was fully crysstalline as-cast. This alloy was part of a program to develop an austenitic steel for elevated temperature applications by strengthening it with TiB2. The alloy contained a relatively large percentage of B, not to induce an amorphous structure, but only as a consequence of trying to obtain a large volume fracture of TiB2 in the completely processed alloy. The observation of spherulitic features in this alloy is described herein. Utilization of the large range of useful magnifications obtainable in a modern TEM, when a suitably thinned foil is available, was a key element in this analysis.

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

1995 ◽  
Vol 53 ◽  
pp. 468-469
Author(s):  
N. David Theodore ◽  
Donald Y.C Lie ◽  
J. H. Song ◽  
Peter Crozier
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
High Speed ◽  
Room Temperature ◽  
Strain Relaxation ◽  
Bipolar Transistors ◽  
Sige Hbt ◽  
Integrated Circuit Manufacturing ◽  
Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

FANSTEEL 85 METAL

Alloy Digest ◽  
1981 ◽  
Vol 30 (6) ◽  
Keyword(s):  
High Temperature ◽  
Physical Properties ◽  
Creep Strength ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Base Alloy ◽  
Heat Treating ◽  
Good Combination ◽  
Bend Strength ◽  
Temperature Performance

Abstract FANSTEEL 85 METAL is a columbium-base alloy characterized by good fabricability at room temperature, good weldability and a good combination of creep strength and oxidation resistance at elevated temperatures. Its applications include missile and rocket components and many other high-temperature parts. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and bend strength as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Cb-7. Producer or source: Fansteel Metallurgical Corporation. Originally published December 1963, revised June 1981.

Strong Coupling: Polariton Bose Condensation

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Strong Coupling ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Dissipative System ◽  
Bose Condensation ◽  
Einstein Condensation ◽  
Strong Coupling Regime ◽  
Stimulated Scattering ◽  
Exciton Polaritons ◽  
Bose Einstein

In this Chapter we address the physics of Bose-Einstein condensation and its implications to a driven-dissipative system such as the polariton laser. We discuss the dynamics of exciton-polaritons non-resonantly pumped within a microcavity in the strong coupling regime. It is shown how the stimulated scattering of exciton-polaritons leads to formation of bosonic condensates that may be stable at elevated temperatures, including room temperature.

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