scholarly journals Direct roll transfer printed silicon nanoribbon arrays based high-performance flexible electronics

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ayoub Zumeit ◽  
Abhishek Singh Dahiya ◽  
Adamos Christou ◽  
Dhayalan Shakthivel ◽  
Ravinder Dahiya
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Printed Electronics ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Single Step ◽  
High Yield ◽  
Transfer Printing ◽  
Large Area ◽  
Direct Printing

AbstractTransfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μeff) >600 cm2/Vs, high on/off ratio (Ion/off) of around 106, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.

scholarly journals High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Abhishek Singh Dahiya ◽  
Dhayalan Shakthivel ◽  
Yogeenth Kumaresan ◽  
Ayoub Zumeit ◽  
Adamos Christou ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Printed Electronics ◽  
Functional Materials ◽  
Transfer Printing ◽  
Semiconducting Materials ◽  
Large Area ◽  
Contact Printing ◽  
Scale Structures ◽  
Silicon Based

Abstract The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

Solution processed 1D polymer/SWCNT composite arrays for high-performance field effect transistors

2021 ◽  
Author(s):  
Xiaoyu Fan ◽  
Jingrun Yang ◽  
Bo Lei ◽  
Zhenghao Yang ◽  
Pengda Che ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconducting Polymers ◽  
Large Area ◽  
Solution Processed

Semiconducting polythiophene polymers are promising materials for the generation of large-area and flexible electronics. However, field effect transistors (FETs) using semiconducting polymers as the channel material possess relatively poor mobility,...

scholarly journals High Performance Printed Electronics on Large Area Flexible Substrates

2020 ◽  
Author(s):  
Mahesh Soni ◽  
Dhayalan Shakthivel ◽  
Adamos Christou ◽  
Ayoub Zumeit ◽  
Nivasan Yogeswaran ◽  
...  
Keyword(s):  
High Performance ◽  
Printed Electronics ◽  
Flexible Substrates ◽  
Large Area

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

Single-step, large-area, variable thickness sputtered WS2 film-based field effect transistors

2020 ◽  
Vol 46 (17) ◽  
pp. 26854-26860
Author(s):  
Merve Acar ◽  
Soheil Mobtakeri ◽  
Hasan Efeoğlu ◽  
Mehmet Ertuğrul ◽  
Emre Gür
Keyword(s):  
Variable Thickness ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Step ◽  
Large Area

Pyrene fused perylene diimides: synthesis, characterization and applications in organic field-effect transistors and optical limiting with high performance

2015 ◽  
Vol 51 (33) ◽  
pp. 7156-7159 ◽  
Author(s):  
Xuejun Zhan ◽  
Ji Zhang ◽  
Sheng Tang ◽  
Yuxuan Lin ◽  
Min Zhao ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Optical Limiting ◽  
Organic Field Effect Transistors ◽  
Perylene Diimides

Pyrene fused PDI derivatives are unprecedentedly designed, with the bilateral one possessing a high mobility up to 1.13 cm2 V−1 s−1.

Self-Assembly Fabrication of High Performance Carbon Nanotubes Based FETs

2003 ◽  
Vol 772 ◽  
Author(s):  
Emmanuel Valentin ◽  
Stephane Auvray ◽  
Arianna Filoramo ◽  
Aline Ribayrol ◽  
Marcelo Goffman ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Self Assembly ◽  
High Performance ◽  
Field Effect Transistors ◽  
High Yield ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Assembled Monolayers ◽  
Self Assembled

AbstractWe describe the realization of high quality self-assembled single wall carbon nanotube field effect transistors (CNTFET). A method using self-assembled monolayers (SAMs) is used to obtain high yield selective deposition placement of single wall carbon nanotubes (SWNTs) on predefined regions of a substrate. This is achieved with individual or small bundles of SWNTs and with high densities suitable for fabrication of integrated devices. We show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs. We therefore validate the self-assembly approach to reliably fabricate efficient carbon nanotube based devices.

scholarly journals High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
High Performance ◽  
Printed Electronics ◽  
Electronic Device ◽  
Molecular Layer ◽  
High Mobility ◽  
Building Blocks ◽  
Solution Processed ◽  
Transfer Method

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

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