scholarly journals High Performance Printed Electronics on Large Area Flexible Substrates

Author(s):  
Mahesh Soni ◽  
Dhayalan Shakthivel ◽  
Adamos Christou ◽  
Ayoub Zumeit ◽  
Nivasan Yogeswaran ◽  
...  
2013 ◽  
Vol 844 ◽  
pp. 158-161 ◽  
Author(s):  
M.I. Maksud ◽  
Mohd Sallehuddin Yusof ◽  
M. Mahadi Abdul Jamil

Recently low cost production is vital to produce printed electronics by roll to roll manufacturing printing process like a flexographic. Flexographic has a high speed technique which commonly used for printing onto large area flexible substrates. However, the minimum feature sizes achieved with roll to roll printing processes, such as flexographic is in the range of fifty microns. The main contribution of this limitation is photopolymer flexographic plate unable to be produced finer micron range due to film that made by Laser Ablation Mask (LAMs) technology not sufficiently robust and consequently at micron ranges line will not be formed on the printing plate. Hence, polydimethylsiloxane (PDMS) is used instead of photopolymer. Printing trial had been conducted and multiple solid lines successfully printed for below fifty microns line width with no interference between two adjacent lines of the printed images.


2020 ◽  
Vol 7 (1) ◽  
Author(s):  
Abhishek Singh Dahiya ◽  
Dhayalan Shakthivel ◽  
Yogeenth Kumaresan ◽  
Ayoub Zumeit ◽  
Adamos Christou ◽  
...  

Abstract The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ayoub Zumeit ◽  
Abhishek Singh Dahiya ◽  
Adamos Christou ◽  
Dhayalan Shakthivel ◽  
Ravinder Dahiya

AbstractTransfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μeff) >600 cm2/Vs, high on/off ratio (Ion/off) of around 106, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000935-000939
Author(s):  
Yiliang Wu ◽  
Ping Liu ◽  
Tony Wigglesworth

Printable conductors with high conductivity would be critical for low-cost printed electronics. In view of printability, conductivity, and electrical stability, metal such as gold or silver derived from solution-deposited precursor compositions would be an ideal candidate. Xerox has been exploring the use of silver nanoparticles as conductor precursor composition for printed electronics. This paper reviews our research in the development of alkylamine-stabilized silver nanoparticles that can be sintered at low temperature (∼ 120 °C) for high conductivity (&gt;10000 S/cm). Silver nanoparticle ink formulations based on these silver nanoparticles exhibit surface-energy independent printability which enables the fabrication of high-performance top-contact transistor devices, and self-assembly characteristic when printed on hydrophilic substrates which allows for large-area, defect-free source drain arrays to be printed with a narrow and uniform channel length.


2013 ◽  
Vol 10 (2) ◽  
pp. 49-53 ◽  
Author(s):  
Yiliang Wu ◽  
Ping Liu ◽  
Tony Wigglesworth

Printable conductors with high conductivity are critical for low-cost printed electronics. From the view of printability, conductivity, and electrical stability, an ideal candidate would be a metal such as gold or silver derived from solution-deposited precursor compositions. We have been exploring the use of silver nanoparticles as the conductor precursor for printed electronics. This paper reviews our research in the development of alkylamine-stabilized silver nanoparticles that can be sintered at a low temperature (∼120°C) for high conductivity (&gt;10,000 S/cm). Silver nanoparticle ink formulations based on these silver nanoparticles exhibit surface-energy independent printability, which enables the fabrication of high-performance top-contact transistor devices, and self-assembly characteristic when printed on hydrophilic substrates, which allows for large-area, defect-free source/drain arrays to be printed with a narrow and uniform channel length.


Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2163
Author(s):  
Dongjin Kim ◽  
Seungyong Han ◽  
Taewi Kim ◽  
Changhwan Kim ◽  
Doohoe Lee ◽  
...  

As the safety of a human body is the main priority while interacting with robots, the field of tactile sensors has expanded for acquiring tactile information and ensuring safe human–robot interaction (HRI). Existing lightweight and thin tactile sensors exhibit high performance in detecting their surroundings. However, unexpected collisions caused by malfunctions or sudden external collisions can still cause injuries to rigid robots with thin tactile sensors. In this study, we present a sensitive balloon sensor for contact sensing and alleviating physical collisions over a large area of rigid robots. The balloon sensor is a pressure sensor composed of an inflatable body of low-density polyethylene (LDPE), and a highly sensitive and flexible strain sensor laminated onto it. The mechanical crack-based strain sensor with high sensitivity enables the detection of extremely small changes in the strain of the balloon. Adjusting the geometric parameters of the balloon allows for a large and easily customizable sensing area. The weight of the balloon sensor was approximately 2 g. The sensor is employed with a servo motor and detects a finger or a sheet of rolled paper gently touching it, without being damaged.


2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.


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