scholarly journals Quantum transport in a chain of quantum dots with inhomogeneous size distribution and manifestation of 1D Anderson localization

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Moon-Hyun Cha ◽  
Jeongwoon Hwang
Keyword(s):  
Size Distribution ◽  
Quantum Transport ◽  
Electronic Device ◽  
High Mobility ◽  
Electronic System ◽  
Transmission Probability ◽  
Conductivity Equation ◽  
Green Function Method ◽  
A Chain ◽  
Analytical Expressions

Abstract The effect of inhomogeneous quantum dot (QD) size distribution on the electronic transport of one-dimensional (1D) QD chains (QDCs) is theoretically investigated. The non-equilibrium Green function method is employed to compute the electron transmission probabilities of QDCs. The ensemble averaged transmission probability shows a close agreement with the conductivity equation predicted by Anderson et al. for a disordered electronic system. The fidelity of quantum transport is defined as the transmission performance of an ensemble of QDCs of length N (N-QDCs) to assess the robustness of QDCs as a practical electronic device. We found that the fidelity of inhomogeneous N-QDCs with the standard deviation of energy level distribution σε is a Lorentzian function of variable Nσε2. With these analytical expressions, we can predict the conductance and fidelity of any QDC characterized by (N, σε). Our results can provide a guideline for combining the chain length and QD size distributions for high-mobility electron transport in 1D QDCs.

Quantum transport in high mobility modulation doped Ga0.25In0.75As/InP quantum wells

1998 ◽  
Vol 84 (4) ◽  
pp. 2112-2122 ◽  
Author(s):  
P. Ramvall ◽  
N. Carlsson ◽  
P. Omling ◽  
L. Samuelson ◽  
W. Seifert ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Transport ◽  
High Mobility

scholarly journals High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

2019 ◽  
Vol 117 (1) ◽  
pp. 80-85 ◽  
Author(s):  
Tatsuyuki Makita ◽  
Shohei Kumagai ◽  
Akihito Kumamoto ◽  
Masato Mitani ◽  
Junto Tsurumi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Semiconductors ◽  
High Performance ◽  
Printed Electronics ◽  
Electronic Device ◽  
Molecular Layer ◽  
High Mobility ◽  
Building Blocks ◽  
Solution Processed ◽  
Transfer Method

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

Fast grown self-assembled polythiophene/graphene oxide nanocomposite thin films at air–liquid interface with high mobility used in polymer thin film transistors

2018 ◽  
Vol 6 (37) ◽  
pp. 9981-9989 ◽  
Author(s):  
Nikhil Nikhil ◽  
Rajiv K. Pandey ◽  
Praveen Kumar Sahu ◽  
Manish Kumar Singh ◽  
Rajiv Prakash
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Electronic Device ◽  
High Mobility ◽  
Practical Application ◽  
Polymer Thin Film ◽  
Nanocomposite Thin Films ◽  
Air Liquid Interface

Successful practical application of a polymer or its nanocomposite depends on the ability to produce a high performance electronic device at a significantly lesser cost and time than those needed to manufacture conventional devices.

Nano-Enhanced Drilling Fluids: Pioneering Approach to Overcome Uncompromising Drilling Problems

2011 ◽  
Vol 134 (1) ◽  
Author(s):  
J. Abdo ◽  
M. Danish Haneef
Keyword(s):  
Rheological Properties ◽  
Size Distribution ◽  
Oil And Gas ◽  
Drilling Fluid ◽  
Drilling Fluids ◽  
Lost Circulation ◽  
Drilling Operations ◽  
Cost Efficient ◽  
A Chain ◽  
Size Distribution Of Particles

The idea of pushing the limits of drilling oil and gas wells by improving drilling fluids for undemanding and cost efficient drilling operations by extracting advantage from the wonders of nanotechnology forms the basis of the work presented here. Foremost, in order to highlight the significance of reducing the size distribution of particles, new clay ATR which has a chain like structure and offers enormous surface area and increased reactivity was tested in different sizes that were chemically and mechanically milled. Bentonite which is a commonly used drilling fluid additive was also tested in different particle size distribution (PSD) and rheological properties were tested. Significant reduction in viscosity with small sized particles was recorded. The tested material called ATR throughout this paper is shown to offer better functionality than bentonite without the requirement of other expensive additives. Experiments were performed with different size distributions and compositions and drastic changes in rheological properties are observed. A detailed investigation of the shear thinning behavior was also carried out with ATR samples in order to confirm its functionality for eliminating the problem of mechanical and differential pipe sticking, while retaining suitable viscosity and density for avoidance of problems like lost circulation, poor hole cleaning and inappropriate operating hydrostatic pressures.

QUANTUM TRANSPORT IN MESOSCOPIC RINGS WITH STUBS

1996 ◽  
Vol 10 (26) ◽  
pp. 3569-3581 ◽  
Author(s):  
SAM YOUNG CHO ◽  
TAESEUNG CHOI ◽  
CHANG-MO RYU
Keyword(s):  
Quantum Transport ◽  
Transmission Probability ◽  
Localized States ◽  
Persistent Currents ◽  
Quantum Waveguide ◽  
One Dimensional ◽  
Continuum States ◽  
Discrete States ◽  
The One ◽  
The Continuum

Quantum transport in the open-system mesoscopic rings with stubs in the absence of magnetic field is investigated by using the one-dimensional quantum waveguide theory. It is shown that discretely localized states due to the presence of stubs play an important role in the electron transport. The behavior of transmission probability shows the asymmetric Fano resonance, which arises from the interaction between the continuum states and the discrete states. Amplification of the persistent currents by the localized states due to the stub is clearly shown. Negative currents are also noticed.

scholarly journals Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

2016 ◽  
Vol 109 (10) ◽  
pp. 102103 ◽  
Author(s):  
C. Morrison ◽  
C. Casteleiro ◽  
D. R. Leadley ◽  
M. Myronov
Keyword(s):  
Quantum Well ◽  
Quantum Transport ◽  
High Mobility

Die Attachment for −120°C to +20°C Thermal Cycling of Microelectronics for Future Mars Rovers—An Overview1

2000 ◽  
Vol 123 (2) ◽  
pp. 105-111 ◽  
Author(s):  
Randall K. Kirschman ◽  
Witold M. Sokolowski ◽  
Elizabeth A. Kolawa
Keyword(s):  
Electronic Device ◽  
Thermal Environment ◽  
High Reliability ◽  
Thermal Conditions ◽  
Thermal Control ◽  
Electronic System ◽  
Primary Concern ◽  
Die Attachment ◽  
Mission Duration ◽  
Night And Day

Active thermal control for electronics on Mars rovers imposes a serious penalty in weight, volume, power consumption, and reliability. Thus, we propose that thermal control be eliminated for future rovers. From a functional standpoint there is no reason that the electronics could not operate over the entire temperature range of the Martian environment, which can vary from a low of ≈−90°C to a high of ≈+20°C during the Martian night and day. The upper end of this range is well within that for conventional electronics. Although the lower end is considerably below that for which conventional—even high-reliability—electronics is designed or tested, it is well established that electronic devices can operate to such low temperatures. The primary concern is reliability of the overall electronic system, especially in regard to the numerous daily temperature cycles that it would experience over the duration of a mission on Mars. Accordingly, key reliability issues have been identified for elimination of thermal control on future Mars rovers. One of these is attachment of semiconductor die onto substrates and into packages. Die attachment is critical since it forms a mechanical, thermal, and electrical interface between the electronic device and the substrate or package. This paper summarizes our initial investigation of existing information related to this issue, in order to form an opinion whether die attachment techniques exist, or could be developed with reasonable effort, to withstand the Mars thermal environment for a mission duration of approximately one earth year. Our conclusion, from a review of literature and personal contacts, is that die attachment can be made sufficiently reliable to satisfy the requirements of future Mars rovers. Moreover, it appears that there are several possible techniques from which to choose and that the requirements could be met by judicious selection from existing methods using hard solders, soft solders, or organic adhesives. Thus, die attachment does not appear to be a roadblock to eliminating thermal control for rover electronics. We recommend that this be further investigated and verified for the specific hardware and thermal conditions appropriate to Mars rovers.

scholarly journals Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

2019 ◽  
Vol 8 (4) ◽  
Author(s):  
Erman Azwan Yahya ◽  
Ramani Kannan ◽  
Lini Lee
Keyword(s):  
Simulation Study ◽  
Electronic Device ◽  
Electronic System ◽  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Power Electronic ◽  
Single Event ◽  
Device Structure ◽  
Power Mosfet ◽  
Heavy Ion Radiation

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

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