scholarly journals Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O3 films through Nb (n-type) and Fe (p-type) doping

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Cristina Florentina Chirila ◽  
Viorica Stancu ◽  
Georgia Andra Boni ◽  
Iuliana Pasuk ◽  
Lucian Trupina ◽  
...  
Keyword(s):  
Effective Density ◽  
Force Microscopy ◽  
Order Of Magnitude ◽  
Electrode Interface ◽  
Nb Doping ◽  
Piezoelectric Force Microscopy ◽  
P Type ◽  
Direction Of Polarization ◽  
Charged Ions ◽  
Positively Charged

AbstractFe (acceptor) and Nb (donor) doped epitaxial Pb(Zr0.2Ti0.8)O3 (PZT) films were grown on single crystal SrTiO3 substrates and their electric properties were compared to those of un-doped PZT layers deposited in similar conditions. All the films were grown from targets produced from high purity precursor oxides and the doping was in the limit of 1% atomic in both cases. The remnant polarization, the coercive field and the potential barriers at electrode interfaces are different, with lowest values for Fe doping and highest values for Nb doping, with un-doped PZT in between. The dielectric constant is larger in the doped films, while the effective density of charge carriers is of the same order of magnitude. An interesting result was obtained from piezoelectric force microscopy (PFM) investigations. It was found that the as-grown Nb-doped PZT has polarization orientated upward, while the Fe-doped PZT has polarization oriented mostly downward. This difference is explained by the change in the conduction type, thus in the sign of the carriers involved in the compensation of the depolarization field during the growth. In the Nb-doped film the majority carriers are electrons, which tend to accumulate to the growing surface, leaving positively charged ions at the interface with the bottom SrRuO3 electrode, thus favouring an upward orientation of polarization. For Fe-doped film the dominant carriers are holes, thus the sign of charges is opposite at the growing surface and the bottom electrode interface, favouring downward orientation of polarization. These findings open the way to obtain p-n ferroelectric homojunctions and suggest that PFM can be used to identify the type of conduction in PZT upon the dominant direction of polarization in the as-grown films.

scholarly journals Влияние ориентации кремниевой подложки с буферным подслоем карбида кремния на диэлектрические и полярные свойства пленок нитрида алюминия

2019 ◽  
Vol 61 (12) ◽  
pp. 2379
Author(s):  
О.Н. Сергеева ◽  
А.В. Солнышкин ◽  
Д.А. Киселев ◽  
Т.С. Ильина ◽  
С.А. Кукушкин ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Thin Layers ◽  
Silicon Substrates ◽  
Pyroelectric Effect ◽  
Force Microscopy ◽  
Piezoelectric Force Microscopy ◽  
P Type

The dielectric and polar properties of thin films of aluminum nitride (AlN) epitaxially grown on variously oriented p-type silicon substrates with a buffer sublayer of silicon carbide (SiC), as well as on vicinal planes, are studied. According to the results of studies of the polar properties by two independent methods — the dynamic pyroelectric effect and piezoelectric force microscopy, it was shown that the use of a SiC buffer layer significantly improves the polar properties of thin layers of aluminum nitride.

scholarly journals Steady state charge conduction through solution processed liquid crystalline lanthanide bisphthalocyanine films

2019 ◽  
Vol 23 (11n12) ◽  
pp. 1603-1615
Author(s):  
Chandana Pal ◽  
Isabelle Chambrier ◽  
Andrew N. Cammidge ◽  
A. K. Sharma ◽  
Asim K. Ray
Keyword(s):  
Metal Ions ◽  
Liquid Crystalline ◽  
Microscopy Study ◽  
Individual Characteristics ◽  
Central Metal ◽  
Force Microscopy ◽  
Atomic Force ◽  
Double Decker ◽  
Order Of Magnitude ◽  
Chain Lengths

In-plane electrical characteristics of non-peripherally octyl(C[Formula: see text]H[Formula: see text]- and hexyl(C[Formula: see text]H[Formula: see text]-substituted liquid crystalline (LC) double decker lanthanide bisphthalocyanine (LnPc[Formula: see text] complexes with central metal ions lutetium (Lu), and gadolinium (Gd) have been measured in thin film formulations on interdigitated gold (Au) electrodes for the applied voltage ([Formula: see text] range of [Formula: see text]. The conduction mechanism is found to be Ohmic within the bias of [Formula: see text] while the bulk limited Poole–Frenkel mechanism is responsible for the higher bias. The compounds show individual characteristics depending on the central metal ions, substituent chain lengths and their mesophases. Values of 67.55 [Formula: see text]cm[Formula: see text] and 42.31 [Formula: see text]cm[Formula: see text] have been obtained for room temperature in-plane Ohmic conductivity of as-deposited octyl lutetium (C[Formula: see text]LuPc[Formula: see text] and hexyl gadolinium (C[Formula: see text]GdPc[Formula: see text] films, respectively while C[Formula: see text]GdPc[Formula: see text] films exhibit nearly two orders of magnitude smaller conductivity. On annealing at 80[Formula: see text]C, Ohmic conductivities of C[Formula: see text]LuPc[Formula: see text] and C[Formula: see text]GdPc[Formula: see text] are found to have increased but the conductivity of C[Formula: see text]GdPc[Formula: see text] decreased by more than one order of magnitude to 1.5 [Formula: see text]cm[Formula: see text]. For physical interpretation of the charge transport behavior of these three molecules, their UV-vis optical absorption spectra in the solution and in as-deposited and annealed solid phases and atomic force microscopy study have been performed. It is believed that both orientation and positional reorganizations are responsible, depending upon the size of the central ion and side chain length.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 453-456 ◽  
Author(s):  
T. Umeda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
Hisayoshi Itoh ◽  
Junichi Isoya
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Electron Irradiation ◽  
Electron Paramagnetic Resonance Study ◽  
Dangling Bond ◽  
Charged State ◽  
Paramagnetic Resonance ◽  
Vacancy Pair ◽  
P Type ◽  
Electron Paramagnetic ◽  
Positively Charged

Carbon antisite-vacancy pair (CSiVC) is a fundamental defect in SiC, and is theoretically predicted to be very stable in p-type materials. However, this pair was found only in the form of a negatively charged state (i.e., the SI5 center = CSiVC −) in n-type and semi-insulating 4H-SiC, and yet, its presence has not been shown in p-type SiC. In this report, we present the first EPR observation on positively charged CSiVC pairs in p-type 4H-SiC. By carefully examining p-type samples after electron irradiation, we found a pair of new defects with C3v and C1h symmetries. They correspond to “c-axial” pairs (C3v) and “basal” pairs (C1h) of CSiVC +, respectively. The positively charged pairs are characterized by a strong 13C hyperfine interaction due to a dangling bond on a carbon antisite (CSi), which is successfully resolved for the c-axial pairs.

scholarly journals Effect of oxidizing and reducing atmospheres on Ba(Ti0.90 Zr0.10)o3:2V ceramics as characterized by piezoresponse force microscopy

2011 ◽  
Vol 5 (3) ◽  
pp. 139-147 ◽  
Author(s):  
Francisco Moura ◽  
Alexandre Simões ◽  
Carla Riccardi ◽  
Maria Zaghete ◽  
Jose Varela ◽  
...  
Keyword(s):  
Data Storage ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Properties ◽  
Piezoresponse Force Microscopy ◽  
Nitrogen Atmosphere ◽  
Ambient Atmosphere ◽  
Practical Applications ◽  
Force Microscopy ◽  
Storage Media ◽  
Piezoelectric Force Microscopy

The effect of annealing atmospheres (Atamb, N2 and O2) on the electrical properties of Ba(Ti0.90Zr0.10 )O3:2V (BZT10:2V) ceramics obtained by the mixed oxide method was investigated. X-ray photoelectron spectroscopy (XPS) analysis indicates that oxygen vacancies present near Zr and Ti ions reduce ferroelectric properties, especially in samples treated in an ambient atmosphere (Atamb ). BZT10:2V ceramics sintered in a nitrogen atmosphere showed better dielectric behaviour at room temperature with a dielectric permittivity measured at a frequency of 10 kHz equal to 16800 with dielectric loss of 0.023. Piezoelectric force microscopy (PFM) images reveal improvement in the piezoelectric coefficient by sintering the sample under nitrogen atmosphere. Thus, BZT10:2V ceramics sintered under a nitrogen atmosphere can be useful for practical applications which include nonvolatile digital memories, spintronics and data-storage media.

scholarly journals Sonochemical Reaction of Bifunctional Molecules on Silicon (111) Hydride Surface

Molecules ◽  
2021 ◽  
Vol 26 (20) ◽  
pp. 6166
Author(s):  
Serge Ismael Zida ◽  
Yue-Der Lin ◽  
Yit Lung Khung
Keyword(s):  
Photoelectron Spectroscopy ◽  
Lone Pair ◽  
Thermal Reaction ◽  
Silicon Hydride ◽  
Force Microscopy ◽  
Bifunctional Molecules ◽  
Bond Breakage ◽  
Sonochemical Reaction ◽  
Grafting From ◽  
P Type

While the sonochemical grafting of molecules on silicon hydride surface to form stable Si–C bond via hydrosilylation has been previously described, the susceptibility towards nucleophilic functional groups during the sonochemical reaction process remains unclear. In this work, a competitive study between a well-established thermal reaction and sonochemical reaction of nucleophilic molecules (cyclopropylamine and 3-Butyn-1-ol) was performed on p-type silicon hydride (111) surfaces. The nature of surface grafting from these reactions was examined through contact angle measurements, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Cyclopropylamine, being a sensitive radical clock, did not experience any ring-opening events. This suggested that either the Si–H may not have undergone homolysis as reported previously under sonochemical reaction or that the interaction to the surface hydride via a lone-pair electron coordination bond was reversible during the process. On the other hand, silicon back-bond breakage and subsequent surface roughening were observed for 3-Butyn-1-ol at high-temperature grafting (≈150 °C). Interestingly, the sonochemical reaction did not produce appreciable topographical changes to surfaces at the nano scale and the further XPS analysis may suggest Si–C formation. This indicated that while a sonochemical reaction may be indifferent towards nucleophilic groups, the surface was more reactive towards unsaturated carbons. To the best of the author’s knowledge, this is the first attempt at elucidating the underlying reactivity mechanisms of nucleophilic groups and unsaturated carbon bonds during sonochemical reaction of silicon hydride surfaces.

Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

2015 ◽  
Vol 821-823 ◽  
pp. 929-932 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Gabriele Fisichella ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Free Standing ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Micrometer Scale ◽  
Contact Size ◽  
Step Edges

The electrical properties of the interface between quasi free standing bilayer graphene (QFBLG) and SiC(0001) have been investigated by nanoscale resolution current measurements using conductive atomic force microscopy (CAFM). I-V analyses were carried out on Au-capped QFBLG contacts with different sizes (from 200 down to 0.5 μm) fabricated on SiC samples with different miscut angles (from on-axis to 3.5° off-axis). The extracted QFBLG/SiC Schottky barrier height (SBH) was found to depend on the contact size. SBH values ∼0.9-1 eV were obtained for large contacts, whereas a gradual increase was observed below a critical (micrometer scale) contact size (depending on the SiC miscut angle) up to values approaching ∼1.5 eV. Nanoscale resolution current mapping on bare QFLBG contacts revealed that SiC step edges and facets represent preferential current paths causing the effective SBH lowering for larger contacts. The reduced barrier height in these regions can be explained in terms of a reduced doping of QFBLG from SiC substrate at (11-20) step edges with respect to the p-type doping on the (0001) terraces.

Laser cleaning of exfoliated graphene

2012 ◽  
Vol 1455 ◽  
Author(s):  
Oliver Ochedowski ◽  
Benedict Kleine Bußmann ◽  
Marika Schleberger
Keyword(s):  
Local Heating ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Ambient Conditions ◽  
Kelvin Probe ◽  
Structural Modifications ◽  
Force Microscopy ◽  
Exfoliated Graphene ◽  
Atomic Force ◽  
P Type

ABSTRACTWe have employed atomic force and Kelvin-Probe force microscopy to study graphene sheets exfoliated on TiO2 under the influence of local heating achieved by laser irradiation. Exfoliation and irradiation took place under ambient conditions, the measurements were performed in ultra high vacuum. We show that after irradiation times of 6 min, an increase of the surface potential is observed which indicates a decrease of p-type carrier concentration. We attribute this effect to the removal of adsorbates like water and oxygen. After irradiation times of 12 min our topography images reveal severe structural modifications of graphene. These resemble the nanocrystallite network which form on graphene/SiO2 but after much longer irradiation times. From our results we propose that short laser heating at moderate powers might offer a way to clean graphene without inducing unwanted structural modifications.

scholarly journals A Flux Ratio and a Universal Property of Permanent Charges Effects on Fluxes

2018 ◽  
Vol 6 (1) ◽  
pp. 28-40 ◽  
Author(s):  
Weishi Liu
Keyword(s):  
Boundary Conditions ◽  
Flux Ratio ◽  
Universal Property ◽  
Charge Effects ◽  
Channel Geometry ◽  
Flow Through ◽  
Charged Ions ◽  
Ion Species ◽  
Positively Charged ◽  
Anion Species

AbstractIn this work, we consider ionic flow through ion channels for an ionic mixture of a cation species (positively charged ions) and an anion species (negatively charged ions), and examine effects of a positive permanent charge on fluxes of the cation species and the anion species. For an ion species, and for any given boundary conditions and channel geometry,we introduce a ratio _(Q) = J(Q)/J(0) between the flux J(Q) of the ion species associated with a permanent charge Q and the flux J(0) associated with zero permanent charge. The flux ratio _(Q) is a suitable quantity for measuring an effect of the permanent charge Q: if _(Q) > 1, then the flux is enhanced by Q; if _ < 1, then the flux is reduced by Q. Based on analysis of Poisson-Nernst-Planck models for ionic flows, a universal property of permanent charge effects is obtained: for a positive permanent charge Q, if _1(Q) is the flux ratio for the cation species and _2(Q) is the flux ratio for the anion species, then _1(Q) < _2(Q), independent of boundary conditions and channel geometry. The statement is sharp in the sense that, at least for a given small positive Q, depending on boundary conditions and channel geometry, each of the followings indeed occurs: (i) _1(Q) < 1 < _2(Q); (ii) 1 < _1(Q) < _2(Q); (iii) _1(Q) < _2(Q) < 1. Analogous statements hold true for negative permanent charges with the inequalities reversed. It is also shown that the quantity _(Q) = |J(Q) − J(0)| may not be suitable for comparing the effects of permanent charges on cation flux and on anion flux. More precisely, for some positive permanent charge Q, if _1(Q) is associated with the cation species and _2(Q) is associated with the anion species, then, depending on boundary conditions and channel geometry, each of the followings is possible: (a) _1(Q) > _2(Q); (b) _1(Q) < _2(Q).

scholarly journals Regulation of Poly(ADP-Ribose) Polymerase 1 Activity by Y-Box-Binding Protein 1

Biomolecules ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1325
Author(s):  
Konstantin N. Naumenko ◽  
Mariya V. Sukhanova ◽  
Loic Hamon ◽  
Tatyana A. Kurgina ◽  
Elizaveta E. Alemasova ◽  
...  
Keyword(s):  
Ternary Complex ◽  
Binding Protein ◽  
Terminal Part ◽  
Force Microscopy ◽  
Atomic Force ◽  
Synthesis Activity ◽  
Positively Charged ◽  
Stimulation Of ◽  
Damaged Dna

Y-box-binding protein 1 (YB-1) is a multifunctional positively charged protein that interacts with DNA or RNA and poly(ADP-ribose) (PAR). YB-1 is poly(ADP-ribosyl)ated and stimulates poly(ADP-ribose) polymerase 1 (PARP1) activity. Here, we studied the mechanism of YB-1-dependent PAR synthesis by PARP1 in vitro using biochemical and atomic force microscopy assays. PAR synthesis activity of PARP1 is known to be facilitated by co-factors such as Mg2+. However, in contrast to an Mg2+-dependent reaction, the activation of PARP1 by YB-1 is accompanied by overall up-regulation of protein PARylation and shortening of the PAR polymer. Therefore, YB-1 and cation co-factors stimulated PAR synthesis in divergent ways. PARP1 autoPARylation in the presence of YB-1 as well as trans-PARylation of YB-1 are greatly affected by the type of damaged DNA, suggesting that PARP1 activation depends on the formation of a PARP1–YB-1–DNA ternary complex. An unstructured C-terminal part of YB-1 involved in an interaction with PAR behaves similarly to full-length YB-1, indicating that both DNA and PAR binding are involved in the stimulation of PARP1 activity by YB-1. Thus, YB-1 is likely linked to the regulation of PARylation events in cells via an interaction with PAR and damaged DNA.

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