scholarly journals Sonochemical Reaction of Bifunctional Molecules on Silicon (111) Hydride Surface

Molecules ◽  
2021 ◽  
Vol 26 (20) ◽  
pp. 6166
Author(s):  
Serge Ismael Zida ◽  
Yue-Der Lin ◽  
Yit Lung Khung

While the sonochemical grafting of molecules on silicon hydride surface to form stable Si–C bond via hydrosilylation has been previously described, the susceptibility towards nucleophilic functional groups during the sonochemical reaction process remains unclear. In this work, a competitive study between a well-established thermal reaction and sonochemical reaction of nucleophilic molecules (cyclopropylamine and 3-Butyn-1-ol) was performed on p-type silicon hydride (111) surfaces. The nature of surface grafting from these reactions was examined through contact angle measurements, X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Cyclopropylamine, being a sensitive radical clock, did not experience any ring-opening events. This suggested that either the Si–H may not have undergone homolysis as reported previously under sonochemical reaction or that the interaction to the surface hydride via a lone-pair electron coordination bond was reversible during the process. On the other hand, silicon back-bond breakage and subsequent surface roughening were observed for 3-Butyn-1-ol at high-temperature grafting (≈150 °C). Interestingly, the sonochemical reaction did not produce appreciable topographical changes to surfaces at the nano scale and the further XPS analysis may suggest Si–C formation. This indicated that while a sonochemical reaction may be indifferent towards nucleophilic groups, the surface was more reactive towards unsaturated carbons. To the best of the author’s knowledge, this is the first attempt at elucidating the underlying reactivity mechanisms of nucleophilic groups and unsaturated carbon bonds during sonochemical reaction of silicon hydride surfaces.

2001 ◽  
Vol 680 ◽  
Author(s):  
Mi-Ran Park ◽  
Wayne A. Anderson

ABSTRACTStable and low-resistance Ohmic contacts are especially important for laser diodes where high current levels are required. Good contacts are especially difficult on p-type GaN which was the motivation for this study. The GaN was epitaxially grown on (0001) sapphire substrates by MOCVD. Resistivity of this layer was 3.5 Ohm-cm and thickness was 2 microns. After conventional cleaning followed by treatment in boiling HNO3: HCl (1:3), metallization was by thermally evaporating 40 nm Au / 60 nm Ni or 70 nm Au / 55 nm Pd. Heat treatment in O2 + N2 at various temperatures followed, with best results at 600 °C or 700 °C, respectively. Best values of the contact resistance were 1.8×10−4 Ohm-cm2 for Pd/Au and 2.65×10−4 Ohm-cm2 for Ni/Au contacts. After repetitive cycling from room temperature to 600 °C, the Ni contacts were very stable and more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts whereas the Pd/Au contacts exhibited a Pd: Au solid solution. Some contacts were quenched in liquid nitrogen following sintering. These contacts were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.


2011 ◽  
Vol 1284 ◽  
Author(s):  
W. C. Mitchel ◽  
J. H. Park ◽  
Howard E. Smith ◽  
L. Grazulis ◽  
S. Mou ◽  
...  

ABSTRACTDirect deposition of graphene from carbon sources on foreign substrates without the use of metal catalysts is shown to be an effective process with several advantages over other growth techniques. Carbon source molecular beam epitaxy (CMBE) in particular provides an additional control parameter in carbon flux and enables growth on substrates other than SiC, including oxidized Si and sapphire. CMBE using thermally evaporated C60 and a heated graphite filament on SiC is reported here. The graphene films were characterized by Raman spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and Hall effect. Graphene films on Si-face SiC grown using the C60 source have Bernal-like stacking and n-type conduction while those grown using the graphite filament have turbostratic stacking and p-type conduction. The sheet concentration for both n- and p-type doping is linearly dependent on film thickness.


2020 ◽  
Vol 10 (16) ◽  
pp. 5415
Author(s):  
Ashique Kotta ◽  
Hyung Kee Seo

Metal-oxide-based electrodes play a crucial role in various transparent conductive oxide (TCO) applications. Among the p-type materials, nickel oxide is a promising electrically conductive material due to its good stability, large bandgap, and deep valence band. Here, we display pristine and 3 at.%V-doped NiO synthesized by the solvothermal decomposition method. The properties of both the pristine and 3 at.%V:NiO nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Raman spectroscopy, ultraviolet–visible spectroscopy (UV–vis), and X-ray photoelectron spectroscopy (XPS). The film properties were characterized by atomic force microscopy (AFM) and a source meter. Our results suggest that incorporation of vanadium into the NiO lattice significantly improves both electrical conductivity and hole extraction. Also, 3 at.%V:NiO exhibits a lower crystalline size when compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicate that vanadium is an excellent dopant for NiO.


2012 ◽  
Vol 18 (3) ◽  
pp. 545-557 ◽  
Author(s):  
Mariana-Dana Damaceanu ◽  
Radu-Dan Rusu ◽  
Mihaela Adriana Olaru ◽  
Daniel Timpu ◽  
Maria Bruma

AbstractAmong the many aspects of laser ablation, development of conical structures induced by excimer laser radiation on polyimide surfaces has been thoroughly investigated. Because the mechanisms that produce these surface textures are not fully understood, two theories, photochemical bond breaking and thermal reaction, have been introduced. Here we present the first study of ultraviolet laser ablation behavior of thin films made from fluorinated poly(naphthyl-imide)s containing oxadiazole rings and the investigation of the mechanism of cone-like structure formation at two laser fluences, 57 and 240 mJ/cm2. The morphology of thin films before and after laser ablation was studied by using various spectroscopy techniques such as Fourier transform infrared spectroscopy, time-resolved emission and X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. All of the data suggest impurities shielded at low fluence radiation (57 mJ/cm2) and a radiation hardening process at high value fluence (240 mJ/cm2), which are proposed as the main mechanisms for laser ablation of our polyimide films, and we bring evidence to support them.


2013 ◽  
Vol 27 (30) ◽  
pp. 1350217 ◽  
Author(s):  
RAID A. ISMAIL

In this paper, we report the effect of etching time on the morphological, structural and electrical properties of porous silicon ( PSi ) synthesized by electrochemical anodization of low resistivity p-type crystalline silicon at current density of 15 mA/cm2. Atomic force microscopy (AFM) measurements showed that the square root of roughness is increased with etching time. Scanning electron microscopy (SEM) investigations revealed that the microstructure of porous silicon is varying with etching time and pores from nano-size to micro-size were formed. Energy dispersive X-ray (EDX) analysis confirmed that the amount of oxygen increases with etching time. Porosity and thickness estimated gravimetrically showed a dependence on the anodization time. The room temperature dark electrical resistivity of porous silicon has observed to be increased with etching time. X-ray photoelectron spectroscopy (XPS) analysis of synthesized porous silicon has shown peaks of C 1s, Si 2p, O 1s, F 1s and N 1s. Current–voltage (I–V) characteristics of synthesized Al / PSi /c -Si junctions prepared at different etching times are investigated and analyzed. The ideality factor, barrier height and built-in potential of porous silicon junctions were strongly found to be dependent on the etching time.


2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.


1998 ◽  
Vol 63 (11) ◽  
pp. 1793-1802 ◽  
Author(s):  
Zdeněk Bastl ◽  
Tomáš Šarapatka

X-Ray photoelectron spectroscopy (XPS) has been used to study the adsorption of carbon monoxide on Pd dispersed on oxidized Si(111) surface. A fraction of the deposited Pd diffusing at room temperature to the SiO2/Si interface increases with decreasing SiO2 thickness. For oxide layers thinner than ≈1 nm, almost all deposited Pd diffuses to SiO2/Si interface forming there Si silicide. Consequently, the amount of adsorbed CO is dependent on the thickness of the thermally grown SiO2 layer. Two different chemical states of adsorbed carbon atoms, the population of which depends on the amount of the Pd deposited, are observed in the C (1s) spectra of adsorbed CO. Adsorption activity of Pd clusters does not depend on whether n- or p-type Si is used. Comparison of the experimental Pd/CO concentration ratios with those calculated assuming several different modes of the Pd growth on SiO2/Si points to the pseudo-Stranski-Krastanow mode (flat clusters with incomplete condensation of the first layer) at 300 K. Changes in charge balance across the Pd/SiO2/Si interface caused by CO adsorption are discussed in terms of the surface photovoltage effect and work function variation.


2020 ◽  
Vol 59 (1) ◽  
pp. 207-214 ◽  
Author(s):  
Yao Wang ◽  
Jianqing Feng ◽  
Lihua Jin ◽  
Chengshan Li

AbstractWe have grown Cu2O films by different routes including self-oxidation and metal-organic deposition (MOD). The reduction efficiency of Cu2O films on graphene oxide (GO) synthesized by modified Hummer’s method has been studied. Surface morphology and chemical state of as-prepared Cu2O film and GO sheets reduced at different conditions have also been investigated using atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). Results show that self-oxidation Cu2O film is more effective on phtocatalytic reduction of GO than MOD-Cu2O film. Moreover, reduction effect of self-oxidation Cu2O film to GO is comparable to that of environmental-friendly reducing agent of vitamin C. The present results offer a potentially eco-friendly and low-cost approach for the manufacture of reduced graphene oxide (RGO) by photocatalytic reduction.


Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1088
Author(s):  
Yuki Gunjo ◽  
Hajime Kamebuchi ◽  
Ryohei Tsuruta ◽  
Masaki Iwashita ◽  
Kana Takahashi ◽  
...  

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.


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