Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height

2001 ◽  
Vol 3 (23) ◽  
pp. 5297-5303 ◽  
Author(s):  
A. De Vrieze ◽  
K. Strubbe ◽  
W. P. Gomes ◽  
S. Forment ◽  
R. L. Van Meirhaeghe
Keyword(s):  
Barrier Height ◽  
Surface Composition ◽  
Schottky Barriers

Surface composition and characteristics of oxide‐free Ga1–xAlxAs (110) Schottky barriers

1979 ◽  
Vol 16 (2) ◽  
pp. 514-516 ◽  
Author(s):  
B. W. Lee ◽  
L. Jou ◽  
P. Mark ◽  
J. L. Yeh ◽  
E. So
Keyword(s):  
Surface Composition ◽  
Schottky Barriers

The temperature dependence of the barrier height in amorphous-silicon Schottky barriers

1987 ◽  
Vol 56 (1) ◽  
pp. 71-78 ◽  
Author(s):  
D. R. Bapat ◽  
K. L. Narasimhan ◽  
Ravi Kuchibhotla
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Barrier Height ◽  
Schottky Barriers

A Proposed Regrowth Mechanism for the Enhancement of Schottky Barrier Height to N-GAAS

1994 ◽  
Vol 337 ◽  
Author(s):  
C-P. Chen ◽  
Y. A. Chang ◽  
T.F. Kuech
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Gaas Layer ◽  
Dark Field ◽  
Schottky Barriers ◽  
Semiconductor Interface ◽  
Al Content ◽  
Current Voltage ◽  
High Al Content

ABSTRACTA systematic study of the enhancement of Schottky barriers to n-GaAs diodes has been carried out using the Ni-Al binary system. The diodes, Ni2Al3/n-GaAs, Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs and NiAl/Al/Ni/n-GaAs, have been realized by sputter deposition at a base pressure ∼2xl0-7 Torr. A high Schottky barrier height ranging from 0.95 to 0.98 eV (deduced from current-voltage measurements) was observed for all the annealed contacts except for Ni2Al3/n-GaAs contacts. The enhancement of the Schottky barrier height in all the contacts was attributed to the formation of a high Al content (Al,Ga)As layer at the metal/semiconductor interface. The formation of this (Al,Ga)As layer was explained in terms of a regrowth mechanism. In this mechanism, Ni reacts with GaAs initially at low temperatures, forming NixGaAs. The NixGaAs layer is believed to react with the Ni-Al layer to form the (Al,Ga)As layer when subjected to a high temperature annealing. A (200) dark field XTEM image of the annealed contact was used to demonstrate the existence of this (Al,Ga)As phase.

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Schottky Diodes on Si1-x-yGexCy Alloys.

1995 ◽  
Vol 379 ◽  
Author(s):  
M. Mamnor ◽  
C. Guedj ◽  
P. Boucaud ◽  
F. Meyer ◽  
D. Bouchier ◽  
...  
Keyword(s):  
Band Gap ◽  
Barrier Height ◽  
Strain Relaxation ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
Germanium Content ◽  
Hole Effective Mass ◽  
P Type

ABSTRACTWe have recently investigated the properties of W/Si1-xGex films prepared by rapid thermal chemical vapor deposition (RTCVD). The barrier height on p-type, ΦBp, varies as the band gap with the germanium content for totally relaxed films, and increases with strain relaxation, while that on n-type remains rather constant. These results suggest that the Fermi level is pinned relative to the conduction band at the interface of the binary alloy and that the measurement of Schottky barriers is a suitable tool to follow band gap variations. In this work, the effects of carbon incorporation on Schottky barriers have been investigated. The study has been performed on Si1-x-yGexCy films (0≤y≤1.35% with x=10%). The strain retained in the films was determined by X-ray diffraction. Infrared absorption measurements have shown that the carbon is incorporated on substitutional sites. The electrical results indicate the same trends than those observed on the binary alloys, the barrier height on n-type remains rather constant while the barrier height on p-type varies. Adding C leads to an increase of ΦBp, but this increase is too large to be explained in terms of variation of the band gap. The influence of other parameters, such as the doping level and the hole effective mass is discussed.

Schottky Barrier Formation on Electron Beam Deposited Amorphous Si1−xGex:H alloys and Amorphous (Si/Si1−xGex):H Modulated Structures

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Christou ◽  
P. Tzanetakis ◽  
Z. Hatzopoulos ◽  
G. Kiriakidis
Keyword(s):  
Electron Beam ◽  
Barrier Height ◽  
Deep Level ◽  
Negative Resistance ◽  
Ion Source ◽  
Schottky Barriers ◽  
Fermi Level Pinning ◽  
Barrier Formation ◽  
Modulated Structures ◽  
Amorphous Si

ABSTRACTAmorphous Si:H and Si1−xGex:H films were prepared by mixing electron beam evaporated silicon with a molecular beam of germanium from a Knudsen cell and with a beam of ionized hydrogen produced by a 0–3 keV ion source. Aluminum Schottky barriers on two types of samples: (1) a-Si1−xGex:H with.15<×<.85 and (2) modulated structures of 50 × 100 Å layers of a-Si:H/a-Si.8Ge.2:H (10-5 Torr PH hydrogen) were investigated. Barrier height was found to depend on the Ge concentration and possible Fermi-level pinning due to the dangling bond deep level. The modulated structures showed a negative resistance region and a barrier height determined only by the composition of the first layer.

Effects of temperature on the photovoltage of Au–InSb Schottky barriers

1977 ◽  
Vol 55 (13) ◽  
pp. 1145-1149 ◽  
Author(s):  
P. Rochon ◽  
E. Fortin ◽  
J. C. Woolley
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photovoltaic Cell ◽  
Interface States ◽  
Schottky Barriers ◽  
Experimental Results ◽  
Effect Of Temperature ◽  
Effects Of Temperature

The effect of temperature on the magnitude of the photovoltage ofa Au–InSb Schottky barrier is investigated in the range 60–250 K. Analysis of the variation of photo voltage with temperature shows that the barrier height [Formula: see text], which for Au–InSb is mostly determined by interface states, varies slowly with temperature. A model, taking into account the temperature dependence of the different components of the photovoltaic cell, is developed to explain the rapid increase in photovoltage with decreasing temperature, and its predictions are tested against experimental results.

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