A first attempt investigation on crystallization screening and crystal quality of lysozyme under different simulated gravities in a large-gradient magnetic field

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 4001-4010
Author(s):  
Zi-Qing Wu ◽  
Yong-Ming Liu ◽  
Chan Liu ◽  
Jing-Jie Chen ◽  
Liang-Liang Chen ◽  
...  

A magnetic field has been proved useful in protein crystallization in that it can help to improve the crystal quality, which is essential for high-resolution diffraction using crystallography.

2016 ◽  
Vol 87 (9) ◽  
pp. 095107 ◽  
Author(s):  
Yong-Ming Liu ◽  
Rui-Qing Chen ◽  
Zi-Qing Wu ◽  
Jing Zhu ◽  
Jian-Yu Shi ◽  
...  

Nanoscale ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 4029-4037
Author(s):  
Lin Zeng ◽  
Xi Chen ◽  
Jing Du ◽  
Zitong Yu ◽  
Rongrong Zhang ◽  
...  

High-resolution separating of 1 μm and 200 nm particles was achieved in a microfluidic system based on negative magnetophoresis ultilizing ultra-high gradient magnetic field greater than 100 000 T m−1 and a ferrofluid with ultra-low concentration (0.01%).


2017 ◽  
Vol 57 (1) ◽  
pp. 29-36 ◽  
Author(s):  
Renata Butkutė ◽  
Martynas Skapas ◽  
Algirdas Selskis ◽  
Virginijus Bukauskas ◽  
Sandra Stanionytė ◽  
...  

Crystallographic properties of AlAs barriers in GaAsBi-based multi-quantum well structures grown on GaAs substrates by molecular beam epitaxy (MBE) and migration-enhanced epitaxy (MEE) were studied. The quantum wells were grown at temperatures ranging from 160 to 350 °C. The width of GaAsBi quantum wells varied from 4 to 20 nm. The optimization of technological parameters for the growth of high crystalline quality AlAs barriers at low temperatures was performed. To explore the impact of high temperature treatment on crystal quality, surface roughness and chemical composition stability, ex situ rapid thermal annealing was performed at 650–750 °C for 180 s in nitrogen ambiance. The structural quality of AlAs barriers, the morphology and sharpness of the interfaces between GaAsBi quantum wells and AlAs barriers were studied by high resolution X-ray diffraction, atomic force microscopy and high resolution transmission electron microscopy, respectively. In this study it was demonstrated that MEE allows one to achieve higher crystal quality of AlAs barriers at much lower temperatures in comparison to MBE. The blocking of Bi out-diffusion from the GaAsBi quantum wells toward the surface was shown for both MBE and MEE grown AlAs barriers.


2021 ◽  
pp. 117-120
Author(s):  
A.S. Mazmanishvili ◽  
N.G. Reshetnyak

The motion of electrons in cylindrical magnetic field with variable strength along the axis is considered. The formation of a beam with energy of 55 keV in the longitudinal direction during its transport in solenoidal magnetic field with large gradient has been studied. The bifurcation regimes of the dynamics of particles during their move-ment along the transport axis both forward to the target and back to the cathode region are considered. The operat-ing modes of the gun are obtained, in which the particle experiences the "bottleneck" effect and returns to the cath-ode region. It is shown that for given electron energy and fixed magnetic field, the parameter that determines the reflection of the particle is the polar angle of entry with respect to the axis of the cylindrical magnetic field. The re-sults of numerical simulation on the motion of the electron flow are presented.


Author(s):  
Xiao Zhang

Electron holography has recently been available to modern electron microscopy labs with the development of field emission electron microscopes. The unique advantage of recording both amplitude and phase of the object wave makes electron holography a effective tool to study electron optical phase objects. The visibility of the phase shifts of the object wave makes it possible to directly image the distributions of an electric or a magnetic field at high resolution. This work presents preliminary results of first high resolution imaging of ferroelectric domain walls by electron holography in BaTiO3 and quantitative measurements of electrostatic field distribution across domain walls.


Author(s):  
S. Horiuchi ◽  
Y. Matsui

A new high-voltage electron microscope (H-1500) specially aiming at super-high-resolution (1.0 Å point-to-point resolution) is now installed in National Institute for Research in Inorganic Materials ( NIRIM ), in collaboration with Hitachi Ltd. The national budget of about 1 billion yen including that for a new building has been spent for the construction in the last two years (1988-1989). Here we introduce some essential characteristics of the microscope.(1) According to the analysis on the magnetic field in an electron lens, based on the finite-element-method, the spherical as well as chromatic aberration coefficients ( Cs and Cc ). which enables us to reach the resolving power of 1.0Å. have been estimated as a function of the accelerating As a result of the calculaton. it was noted that more than 1250 kV is needed even when we apply the highest level of the technology and materials available at present. On the other hand, we must consider the protection against the leakage of X-ray. We have then decided to set the conventional accelerating voltage at 1300 kV. However. the maximum accessible voltage is 1500 kV, which is practically important to realize higher voltage stabillity. At 1300 kV it is expected that Cs= 1.7 mm and Cc=3.4 mm with the attachment of the specimen holder, which tilts bi-axially in an angle of 35° ( Fig.1 ). In order to minimize the value of Cc a small tank is additionally placed inside the generator tank, which must serve to seal the magnetic field around the acceleration tube. An electron gun with LaB6 tip is used.


Author(s):  
S.I. Woods ◽  
Nesco M. Lettsome ◽  
A.B. Cawthorne ◽  
L.A. Knauss ◽  
R.H. Koch

Abstract Two types of magnetic microscopes have been investigated for use in high resolution current mapping. The scanning fiber/SQUID microscope uses a SQUID sensor coupled to a nanoscale ferromagnetic probe, and the GMR microscope employs a nanoscale giant magnetoresistive sensor. Initial scans demonstrate that these microscopes can resolve current lines less than 10 µm apart with edge resolution of 1 µm. These types of microscopes are compared with the performance of a standard scanning SQUID microscope and with each other with respect to spatial resolution and magnetic sensitivity. Both microscopes show great promise for identifying current defects in die level devices.


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