The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin films

1992 ◽  
Vol 72 (10) ◽  
pp. 4918-4924 ◽  
Author(s):  
L. A. Clevenger ◽  
A. Mutscheller ◽  
J. M. E. Harper ◽  
C. Cabral ◽  
K. Barmak
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Alpha Phase ◽  
The Relationship ◽  
Deposition Conditions

Effect of Deposition Conditions on Intrinsic Stress, Phase Transformation and Stress Relaxation in Tantalum Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
A. Mutscheller ◽  
L. A. Clevenger ◽  
J.M.E. Harper ◽  
C. Cabrai ◽  
K. Barmakt
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Phase Transformation ◽  
Stress Relaxation ◽  
Compressive Stress ◽  
Stress Relief ◽  
Beta Phase ◽  
Alpha Phase ◽  
Intrinsic Stress

AbstractWe demonstrate that the high temperature polymorphic tantalum phase transition from the tetragonal beta phase to the cubic alpha phase causes complete stress relaxation and a large decrease in the resistance of tantalum thin films. 100 nm beta tantalum thin films were deposited onto thermally oxidized <100> silicon wafers by dc magnetron sputtering with argon. In situ stress and resistance at temperature were measured during temperature-ramped annealing in purified He. Upon heating, films that were initially compressively stressed showed increasing compressive stress due to thermo-elastic deformation from 25 to 550°C, slight stress relief due to plastic deformation from 550 to 700°C and complete stress relief due to the beta to alpha phase transformation at approximately 700–800°C. Incomplete compressive stress relaxation was observed at high temperatures if the film was initially deposited in the alpha phase or if the beta phase did not completely transform into alpha by 800°C. This incomplete beta to alpha phase transition was most commonly observed on samples that had radio frequency substrate bias greater than -100 V. We conclude that the main stress relief mechanism for tantalum thin films is the beta to alpha phase transformation that occurs at 700 to 800°C.

Preparation and Morphology of CdZnS Thin Films

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940060
Author(s):  
S. I. Sadovnikov
Keyword(s):  
Thin Films ◽  
Text Structure ◽  
Layer By Layer ◽  
Space Group ◽  
Synthesis Conditions ◽  
Layer Deposition ◽  
Two Phases ◽  
The Relationship ◽  
Selection Of ◽  
Deposition Conditions

Thin films based on limited solid solutions of cadmium and zinc sulfides have been synthesized by a one-stage epitaxial layer-by-layer deposition from an ammonium-containing aqueous solution of cadmium and zinc chlorides and thiocarbamide on a glass substrate. The thickness control of sulfide layers was carried out by selection of reagent concentrations and the deposition conditions. The relationship between the synthesis conditions of CdxZn[Formula: see text]S thin films and the size of sulfide nanoparticles in these films is established. The films contain two phases: hexagonal (space group [Formula: see text]) phase with [Formula: see text] structure of wurtzite type and cubic (space group [Formula: see text]-[Formula: see text]) phase with [Formula: see text] structure of sphalerite type. It is shown that the CdxZn[Formula: see text]S film consists of separate [Formula: see text][Formula: see text]nm agglomerates which are a collection of smaller nanometer-sized particles. The dependence of the band gap of the synthesized films on their thickness is found.

Precision Teng-Man Electro-Optic Measurements Using Highly Near-Infrared Transparent Electrodes

2006 ◽  
Vol 928 ◽  
Author(s):  
Lian Wang ◽  
Yu Yang ◽  
Zhifu Liu ◽  
Tobin J. Marks ◽  
Seng-Tiong Ho
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Measurement Accuracy ◽  
Near Infrared ◽  
Film Deposition ◽  
Transparent Electrodes ◽  
Electro Optic ◽  
First Time ◽  
The Relationship ◽  
Deposition Conditions

AbstractA series of highly near-infrared (NIR) transparent In2O3 thin films has been grown by ion-assisted deposition (IAD) at room temperature, and their optical and electrical properties characterized. The NIR transparency and the plasma edge can be engineered through control of the film deposition conditions. The as-deposited In2O3 thin films were employed as transparent electrodes for direct electro-optic (EO) characterization measurements via the Teng-Man technique. Using LiNbO3 as the standard, the relationship between the degree of electrode NIR transparency and Teng-Man EO measurement accuracy was evaluated. It is found that In2O3 electrodes can be tailored to be highly NIR transparent, thus providing more accurate Teng-Man EO coefficient quantification than ITO (tin-doped indium oxide). In addition, the EO coefficients of stilbazolium-based self-assembled superlattice (SAS) thin films were directly determined for the first time by the Teng-Man technique using an optimized In2O3 electrode. EO coefficients r33 of 42.2, 13.1, and 6.4 pm/V are obtained at 633, 1064, and 1310 nm, respectively.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

scholarly journals Fabrication of Transparent Mg(OH)2 Thin Films by Drop-Dry Deposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 724
Author(s):  
Tong Li ◽  
Masaya Ichimura
Keyword(s):  
Thin Films ◽  
Aqueous Solution ◽  
Optical Properties ◽  
Surface Morphology ◽  
Magnesium Hydroxide ◽  
Dry Deposition ◽  
Visible Range ◽  
Substrate Heating ◽  
Water Effects ◽  
Deposition Conditions

Magnesium hydroxide (Mg(OH)2) thin films were deposited by the drop-dry deposition (DDD) method using an aqueous solution containing Mg(NO3)2 and NaOH. DDD was performed by dropping the solution on a substrate, heating-drying, and rinsing in water. Effects of different deposition conditions on the surface morphology and optical properties of Mg(OH)2 thin films were researched. Films with a thickness of 1−2 μm were successfully deposited, and the Raman peaks of Mg(OH)2 were observed for them. Their transmittance in the visible range was 95% or more, and the bandgap was about 5.8 eV. It was found that the thin films have resistivity of the order of 105 Ωcm. Thus, the transparent and semiconducting Mg(OH)2 thin films were successfully prepared by DDD.

Phase transformation in Cu2SnS3 (CTS) thin films through pre-treatment in sulfur atmosphere

2021 ◽  
Vol 32 (8) ◽  
pp. 10018-10027
Author(s):  
M. A. Olgar ◽  
B. M. Başol ◽  
M. Tomakin ◽  
E. Bacaksız
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Sulfur Atmosphere ◽  
Pre Treatment
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