Investigation of temperature dependent dielectric constant of a sputtered TiN thin film by spectroscopic ellipsometry

2014 ◽  
Vol 115 (3) ◽  
pp. 033516 ◽  
Author(s):  
S. Tripura Sundari ◽  
R. Ramaseshan ◽  
Feby Jose ◽  
S. Dash ◽  
A. K. Tyagi
2020 ◽  
Vol 110 ◽  
pp. 110445
Author(s):  
Chandan Howlader ◽  
Mehedhi Hasan ◽  
Alex Zakhidov ◽  
Maggie Yihong Chen

2012 ◽  
Vol 1399 ◽  
Author(s):  
Kajal Jindal ◽  
Monika Tomar ◽  
Vinay Gupta

ABSTRACTTemperature dependent optical properties of RF-sputtered c-axis oriented ZnO:N thin film have been investigated. Surface Plasmon modes are excited at the metal-dielectric interface in the Kretschmann-Reather configuration using prism coupling technique. Effect of ZnO:N thin film deposited over Prism-Au structure on the SPR reflectance is studied over a wide range of temperature from 300–500 K at 633 nm wavelength. The value of dielectric constant of ZnO:N film obtained by fitting the experimentally obtained data with the theoretically generated SPR curve at the optical frequency is found to increase linearly with temperature. The increase in dielectric constant (4.03 to 4.11) with increase in temperature from 300 K to 500 K indicates a promising application of the system as an efficient low-cost temperature sensor.


AIP Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 035117
Author(s):  
Qiao Chen ◽  
Xiangqi Wang ◽  
Min Zhang ◽  
Zilong Xu ◽  
Junbo Gong ◽  
...  

Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.


2019 ◽  
Vol 6 (10) ◽  
pp. 106321 ◽  
Author(s):  
Alireza Kashir ◽  
Hyeon-Woo Jeong ◽  
Woochan Jung ◽  
Yoon Hee Jeong ◽  
Gil-Ho Lee

2003 ◽  
Vol 766 ◽  
Author(s):  
Jin-Heong Yim ◽  
Jung-Bae Kim ◽  
Hyun-Dam Jeong ◽  
Yi-Yeoul Lyu ◽  
Sang Kook Mah ◽  
...  

AbstractPorous low dielectric films containing nano pores (∼20Å) with low dielectric constant (<2.2), have been prepared by using various kinds of cyclodextrin derivatives as porogenic materials. The pore structure such as pore size and interconnectivity can be controlled by changing functional groups of the cyclodextrin derivatives. We found that mechanical properties of porous low-k thin film prepared with mCSSQ (modified cyclic silsesquioxane) precursor and cyclodextrin derivatives were correlated with the pore interconnection length. The longer the interconnection length of nanopores in the thin film, the worse the mechanical properties of the thin film (such as hardness and modulus) even though the pore diameter of the films were microporous (∼2nm).


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