Radiation detection using fully depleted 50 μm thick Ni/n-4H-SiC epitaxial layer Schottky diodes with ultra-low concentration of Z 1 / 2 and E H 6 / 7 deep defects

2020 ◽  
Vol 128 (11) ◽  
pp. 114501
Author(s):  
Sandeep K. Chaudhuri ◽  
Joshua W. Kleppinger ◽  
Krishna C. Mandal
Keyword(s):  
Epitaxial Layer ◽  
Schottky Diodes ◽  
Radiation Detection ◽  
Fully Depleted ◽  
Low Concentration ◽  
Deep Defects

Electrical properties of detector Schottky diodes based on 4H-SiC high quality epitaxial layer

2019 ◽  
Author(s):  
Bohumír Zaťko ◽  
Ladislav Hrubčín ◽  
Pavol Boháček ◽  
Jozef Osvald ◽  
Andrea Šagátová ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Schottky Diodes ◽  
High Quality

Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

2005 ◽  
Vol 2 (7) ◽  
pp. 2559-2563 ◽  
Author(s):  
Sung-Jong Park ◽  
Heon-Bok Lee ◽  
Wang Lian Shan ◽  
Soo-Jin Chua ◽  
Jung-Hee Lee ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Schottky Diodes

scholarly journals Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 254 ◽  
Author(s):  
Krishna C. Mandal ◽  
Joshua W. Kleppinger ◽  
Sandeep K. Chaudhuri
Keyword(s):  
South Carolina ◽  
Epitaxial Layer ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Harsh Environment ◽  
University Of South Carolina ◽  
Defect Identification ◽  
The University ◽  
Shed Light

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes

2009 ◽  
Vol 7 (5) ◽  
pp. 707-711 ◽  
Author(s):  
Tarek Ben Salah ◽  
Mahbouba Amairi ◽  
Zina Sassi ◽  
Hervé Morel
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Layer ◽  
Schottky Diodes ◽  
Parameters Estimation

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

2008 ◽  
Vol 600-603 ◽  
pp. 123-126 ◽  
Author(s):  
Francesco La Via ◽  
Gaetano Izzo ◽  
Marco Mauceri ◽  
Giuseppe Pistone ◽  
Giuseppe Condorelli ◽  
...  
Keyword(s):  
Growth Rate ◽  
Epitaxial Layer ◽  
Structural Characterization ◽  
Defect Density ◽  
Schottky Diodes ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Characterization Methods ◽  
Very High

The growth rate of 4H-SiC epi layers has been increased up to 100 µm/h with the use of trichlorosilane instead of silane as silicon precursor. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Schottky diodes, manufactured on the epitaxial layer grown with trichlorosilane at 1600 °C, have higher yield and lower defect density in comparison to diodes realized on epilayers grown with the standard epitaxial process.

Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

2006 ◽  
Vol 527-529 ◽  
pp. 199-202 ◽  
Author(s):  
Francesco La Via ◽  
G. Galvagno ◽  
A. Firrincieli ◽  
Fabrizio Roccaforte ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Growth Parameters ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Maximum Growth ◽  
Deposition Process ◽  
Maximum Growth Rate ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Dilution Ratio

The influence of the epitaxial layer growth parameters on the electrical characteristics of Schottky diodes has been studied in detail. Several diodes were manufactured on different epitaxial layers grown with different Si/H2 ratio and hence with different growth rates. From the electrical characterization a maximum silicon dilution ratio can be fixed at 0.04 %. This limit fixes also a maximum growth rate that can be obtained in the epitaxial growth, with this process, at about 8 μm/h. Several epitaxial layers have been grown, using this dilution ratio, with different temperatures (1550÷1650 °C). At 1600 °C the best compromise between the direct and the reverse characteristics has been found. With this process the yield decreases from 90% for a Schottky diode area of 0.25 mm2 to 61% for the 2 mm2 diodes. Optimizing the deposition process to reduce the defects introduced by the epitaxial process, yield of the order of 80% can be reached on 1 mm2 diodes.

Quasi-Schottky Diodes on (n)In.53Ga.47as with Barrier Heights of 0.6 eV

1991 ◽  
Vol 240 ◽  
Author(s):  
M. Marso ◽  
P. Kordoš ◽  
R. Meyer ◽  
H. Lüth
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Surface Layers ◽  
Fully Depleted ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Basic Parameters ◽  
And Control

ABSTRACTThe modification and control of the Schottky barrier height on (n)InGaAs is an important tool at the device preparation as the barrier height is very low, øB° = 0.2 eV. We report about the Schottky barrier enhancement on (n)InGaAs by thin fully depleted surface layers of high doped (p+)InGaAs. Structures with different thicknesses of (p+)InGaAs in the range from 8 to 80 nm were grown by LP MOVPE technique and quasi-Schottky diodes with different contact areas were prepared using titanium as a barrier metal. I-V and I-T characteristics were measured and analysed to obtain basic parameters of prepared diodes, i. e. ideality factor n, effective barrier height øB, series resistance Rgand reverse current density JR (1V). The barrier height enhancement increases with the thickness of the (p+)-layer. Effective barrier heights of øB>0.6 eV, i.e. higher than reported until now, can be obtained with the surface layers of (p+)InGaAs with thicknesses exceeding 25 nm.

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