A unified thermionic and thermionic-field emission (TE–TFE) model for ideal Schottky reverse-bias leakage current

In this work we analyzed the radiation hardness of SiC p+n diodes after very high 1 MeV neutron fluence. The diode structure is based on a p+ emitter ion implanted in n-type epilayer with thickness equal to 5 %m and donor doping ND = 3×1015 cm-3. Before irradiation, the average leakage current density at 100 V reverse bias was of the order of 3 nA/cm2. These devices were irradiated at four different fluence values, logarithmically distributed in the range 1014-1016 (1 MeV) neutrons/cm2. After irradiation the epilayer material became more resistive, as indicated by the reduction of the forward and reverse current density at a given voltage. In particular, after a neutron fluence of 1×1014 n/cm2 the epilayer active doping concentration decreased to 1.5×1015 cm-3. After irradiation at 1016 n/cm2, i.e. the highest fluence value, the average leakage current density at 100 V reverse bias decreased to values of the order of 0.1 nA/cm2. This very low noise even after very high fluence is very important to obtain a high signal to noise ratio even at room temperature.

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Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

10.7567/ssdm.2012.f-7-4 ◽

2012 ◽

Author(s):

T. Oishi ◽

K. Hayashi ◽

Y. Yamaguchi ◽

H. Otsuka ◽

K. Yamanaka ◽

...

Keyword(s):

Leakage Current ◽

Reverse Bias ◽

Gate Leakage Current ◽

Gate Leakage ◽

Mechanism Study ◽

Gan Hemt ◽

Hemt Structure ◽

Tcad Simulation ◽

High Reverse Bias

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Role of Interface-States in the Reverse Bias Aging of GaAs Schottky Barriers

MRS Proceedings ◽

10.1557/proc-184-219 ◽

1990 ◽

Vol 184 ◽

Author(s):

K. A. Christianson

Keyword(s):

Cross Section ◽

Aging Process ◽

Reverse Bias ◽

Capture Cross Section ◽

Forward Bias ◽

Interface State ◽

Schottky Barriers ◽

Capture Cross ◽

State Generation ◽

Thermionic Field Emission

ABSTRACTForward bias capacitance has been used to examine the Au/W/GaAs and Au/Pt/Ti/GaAs Schottky barriers present in power microwave MESFET devices to see if interface-state generation plays any role in the previously reported reverse bias barrier height aging process. If a constant carrier capture cross-section is assumed, forward bias capacitance has shown that for samples strongly susceptible to aging (i.e. the Au/W/GaAs samples in this study) interface-state generation is taking place during the aging process. The validity of the constant capture cross section assumption has been tested by examining the I–V properties. For those samples whose reverse I–V properties were not dominated by thermionic-field emission, similar increases in interface-state densities were evaluated from the I–V characteristics for the degraded samples.

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Electrical Performance and Scalability of Ni-monosilicide towards sub 0.13 μm Technologies

MRS Proceedings ◽

10.1557/proc-670-k7.1 ◽

2001 ◽

Vol 670 ◽

Cited By ~ 1

Author(s):

Anne Lauwers ◽

Muriel de Potter ◽

Richard Lindsay ◽

An Steegen ◽

Nico Roelandts ◽

...

Keyword(s):

Sheet Resistance ◽

Leakage Current ◽

Reverse Bias ◽

Active Role ◽

Active Area ◽

Electrical Performance ◽

Junction Depth ◽

Shallow Junction ◽

The Relationship ◽

Thickness Sheet

ABSTRACTThe relationship between silicide thickness, sheet resistance and silicon consumption is experimentally checked for Co-disilicide and Ni-monosilicide. The reverse bias leakage current of shallow Ni-silicided and Co-silicided square diodes is compared for varying junction depth and varying silicide thickness. A lower reverse bias leakage current is obtained for a Ni-silicided shallow junction as compared to its Co-silicided counterpart. This can be attributed to the reduced silicon consumption. The Ti cap does not play an active role during the Ni-silicidation of narrow active area and poly lines. It is shown that a Ni-silicidation process is scalable without Ti cap.

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