Enhancement of the PL Intensity of Silica Based Polymer Electret after Electro-Thermo-Polarization

2021 ◽  
Vol 213 (1) ◽  
pp. 158-164
Author(s):  
M. A. Ramazanov ◽  
H. A. Shirinova ◽  
N. A. Huseynzade ◽  
M. R. Hasanova ◽  
M. A. Nuriyev ◽  
...  
Keyword(s):  
Pl Intensity

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

Role of Sm3+ Doping on Structural, Optical and Photoluminescence Properties of ZnO Nanoparticles Synthesized by Sol-gel Auto- combustion Method

2020 ◽  
Vol 5 (3) ◽  
pp. 236-251
Author(s):  
Eshwara I. Naik ◽  
Halehatty S.B. Naik ◽  
Ranganaik Viswanath
Keyword(s):  
Zno Nanoparticles ◽  
Sol Gel ◽  
Combustion Method ◽  
Content Increase ◽  
Photoluminescence Properties ◽  
Tem Analysis ◽  
Auto Combustion ◽  
Ion Doping ◽  
Doped Zno ◽  
Pl Intensity

Background: Various interesting consequences are reported on structural, optical, and photoluminescence properties of Zn1-xSmxO (x=0, 0.01, 0.03 and 0.05) nanoparticles synthesized by sol-gel auto-combustion route. Objective: This study aimed to examine the effects of Sm3+-doping on structural and photoluminescence properties of ZnO nanoparticles. Methods: Zn1-xSmxO (x=0, 0.01, 0.03 and 0.05) nanoparticles were synthesized by sol-gel auto combustion method. Results: XRD patterns confirmed the Sm3+ ion substitution through the undisturbed wurtzite structure of ZnO. The crystallite size was decreased from 24.33 to 18.46 nm with Sm3+ doping. The hexagonal and spherical morphology of nanoparticles was confirmed by TEM analysis. UV-visible studies showed that Sm3+ ion doping improved the visible light absorption capacity of Sm3+ iondoped ZnO nanoparticles. PL spectra of Sm3+ ion-doped ZnO nanoparticles showed an orange-red emission peak corresponding to 4G5/2→6HJ (J=7/2, 9/2 and 11/2) transition of Sm3+ ion. Sm3+ ion-induced PL was proposed with a substantial increase in PL intensity with a blue shift in peak upon Sm3+ content increase. Conclusion: Absorption peaks associated with doped ZnO nanoparticles were moved to a longer wavelength side compared to ZnO, with bandgap declines when Sm3+ ions concentration was increased. PL studies concluded that ZnO emission properties could be tuned in the red region along with the existence of blue peaks upon Sm3+ ion doping, which also results in enhancing the PL intensity. These latest properties related to Sm3+ ion-doped nanoparticles prepared by a cost-efficient process appear to be interesting in the field of optoelectronic applications, which makes them a prominent candidate in the form of red light-emitting diodes.

scholarly journals Post-Synthesis Modification of Photoluminescent and Electrochemiluminescent Au Nanoclusters with Dopamine

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 46
Author(s):  
Jae Hyun Kim ◽  
Joohoon Kim
Keyword(s):  
Near Infrared ◽  
Au Nanoclusters ◽  
Metallic Core ◽  
Thiolate Ligand ◽  
Pl Intensity ◽  
Post Synthesis

Here, we report a post-synthesis functionalization of the shell of Au nanoclusters (NCs) synthesized using glutathione as a thiolate ligand. The as-synthesized Au NCs are subjected to the post-synthesis functionalization via amidic coupling of dopamine on the cluster shell to tailor photoluminescence (PL) and electrochemiluminescence (ECL) features of the Au NCs. Because the NCs’ PL at ca. 610 nm is primarily ascribed to the Au(I)-thiolate (SG) motifs on the cluster shell of the NCs, the post-synthesis functionalization of the cluster shell enhanced the PL intensity of the Au NCs via rigidification of the cluster shell. In contrast to the PL enhancement, the post-synthesis modification of the cluster shell does not enhance the near-infrared (NIR) ECL of the NCs because the NIR ECL at ca. 800 nm is ascribed to the Au(0)-SG motifs in the metallic core of the NCs.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

HVPE GaN with Low Concentration of Point Defects for Power Electronics

2015 ◽  
Vol 1736 ◽  
Author(s):  
M. A. Reshchikov ◽  
J.D. McNamara ◽  
A. Usikov ◽  
H. Helava ◽  
Yu. Makarov
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Point Defects ◽  
Excitation Intensity ◽  
Low Concentration ◽  
Pl Spectrum ◽  
Pl Intensity

ABSTRACTWe have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.

An optical ratiometric temperature sensor based on dopant-dependent thermal equilibrium in dual-emitting Ag&Mn:ZnInS quantum dots

RSC Advances ◽  
2016 ◽  
Vol 6 (63) ◽  
pp. 58113-58117 ◽  
Author(s):  
Guangguang Huang ◽  
Chunlei Wang ◽  
Xiaojing Xu ◽  
Yiping Cui
Keyword(s):  
Quantum Dots ◽  
Optical Sensor ◽  
Temperature Sensor ◽  
Thermal Equilibrium ◽  
Temperature Detection ◽  
Pl Intensity

A novel optical sensor for ratiometric temperature detection is devised via Ag&Mn:ZnInS quantum dots (QDs). The temperature can be read via the PL ratios of Ag-related and Mn-related PL intensity.

scholarly journals Photoluminescence of CdSe/ZnS quantum dots in nematic liquid crystals in electric fields

2018 ◽  
Vol 9 ◽  
pp. 1544-1549 ◽  
Author(s):  
Margarita A Kurochkina ◽  
Elena A Konshina ◽  
Daria Khmelevskaia
Keyword(s):  
Quantum Dots ◽  
Liquid Crystals ◽  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Electric Fields ◽  
Dielectric Anisotropy ◽  
Vertical Position ◽  
Decay Times ◽  
Pl Intensity

We have experimentally investigated the effect of the reorientation of a nematic liquid crystal (LC) in an electric field on the photoluminescence (PL) of CdSe/ZnS semiconductor quantum dots (QDs). To the LC with positive dielectric anisotropy, 1 wt % QDs with a core diameter of 5 nm was added. We compared the change of PL intensity and decay times of QDs in LC cells with initially planar or vertically orientated molecules, i.e., in active or passive LC matrices. The PL intensity of the QDs increases four-fold in the active LC matrix and only 1.6-fold in the passive LC matrix without reorientation of the LC molecules. With increasing electric field strength, the quenching of QDs luminescence occurred in the active LC matrix, while the PL intensity did not change in the passive LC matrix. The change in the decay time with increasing electric field strength was similar to the behavior of the PL intensity. The observed buildup in the QDs luminescence can be associated with the transfer of energy from LC molecules to QDs. In a confocal microscope, we observed the increase of particle size and the redistribution of particles in the active LC matrix with the change of the electric field strength. At the same time, no significant changes occurred in the passive LC matrix. With the reorientation of LC molecules from the planar in vertical position in the LC active matrix, quenching of QD luminescence and an increase of the ion current took place simultaneously. The obtained results are interesting for controlling the PL intensity of semiconductor QDs in liquid crystals by the application of electric fields.

Photoluminescence from n-(p-) type impurity doped Si nanocrystals

2000 ◽  
Vol 638 ◽  
Author(s):  
Minoru Fujii ◽  
Atsushi Mimura ◽  
Shinji Hayashi ◽  
Dmitri Kovalev ◽  
Frederick Koch
Keyword(s):  
Free Electrons ◽  
Electron Hole ◽  
P Concentration ◽  
Si Nanocrystals ◽  
Donor And Acceptor ◽  
Impurity Doped ◽  
Pl Intensity ◽  
B Doping ◽  
Three Body ◽  
P Type

AbstractEffects of impurity (P and B) doping on the photoluminescence (PL) properties of Si nanocrystals (nc-Si) in SiO2 thin films are studied. It is shown that with increasing P concentration, PL intensity first increases and then decreases. In the P concentration range where PL intensity increases, quenching of the defect-related PL is observed, suggesting that dangling-bond defects are passivated by P doping. On the other hand, in the range where PL intensity decreases, optical absorptiondue to the intravalley transitions of free electrons generated by P doping appears. The generation of free electrons andthe resultant three-body Auger recombination of electron-hole pairs is considered to be responsible for theobserved PL quenching. In the case of B doping, the behavior is much different. With increasing B concentration, PL intensity decreases monotonously. By combining the results obtained for P and B doped samples, theeffects of donor and acceptor impurities on the PL properties of nc-Si are discussed.

scholarly journals Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

2000 ◽  
Vol 5 (S1) ◽  
pp. 796-802 ◽  
Author(s):  
Yong-Hoon Cho ◽  
G. H. Gainer ◽  
J. B. Lam ◽  
J. J. Song ◽  
W Yang ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Stokes Shift ◽  
Energy Shift ◽  
Peak Position ◽  
Time Resolved ◽  
Temperature Range ◽  
Al Content ◽  
Peak Energy ◽  
Emission Behavior ◽  
Pl Intensity

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and time-resolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-shaped” full width at half maximum (FWHM) change (increase-decrease-increase) with increasing temperature. Based on time-resolved PL, the S shape (inverted S shape) of the PL peak position (FWHM) as a function of temperature, and the much smaller PL intensity decrease in the temperature range showing the anomalous emission behavior, we conclude that strong localization of carriers occurs in InGaN and even in AlGaN with rather high Al content. We observed that the following increase with increasing Al content in AlGaN epilayers: (i) a Stokes shift between the PL peak energy and the absorption edge, (ii) a redshift of the emission with decay time, (iii) the deviations of the PL peak energy, FWHM, and PL intensity from their typical temperature dependence, and (iv) the corresponding temperature range of the anomalous emission behavior. This indicates that the band-gap fluctuation responsible for these characteristics is due to energy tail states caused by non-random inhomogeneous alloy potential variations enhanced with increasing Al content.

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