Conditions for the identical distribution of free carriers in thin films

ABSTRACTVarious compositions Bi-Sr-Ca-Cu-O thin films having 2212–1 ike structure have been synthesized on MgO substrates using Molecular Beam Epitaxy. Four Knudsen metal sources were utilized to prepare alloy films which were subsequently post annealed in air atmosphere. Quenching of the films from the annealing temperature, 800°C-820°C, increased the superconducting transition temperature Tc. The highest Tcs, 90 K - 95 K, were attained for compositions with slightly lower Ca and Sr content if compared to the nominal 2212 and 2223 ones. Plasma frequency of free carriers, ωp, determined from optical reflectivity measurements have been found to increase with the average density of CuO2 units. However, no substantial shift ofωp was displayed by the highest Tc films.

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Infrared detection of hydrogen-generated free carriers in polycrystalline ZnO thin films

Journal of Applied Physics ◽

10.1063/1.1851599 ◽

2005 ◽

Vol 97 (4) ◽

pp. 043522 ◽

Cited By ~ 42

Author(s):

Colin A. Wolden ◽

Teresa M. Barnes ◽

Jason B. Baxter ◽

Eray S. Aydil

Keyword(s):

Thin Films ◽

Infrared Detection ◽

Zno Thin Films ◽

Free Carriers

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Effects of Indium on the Properties of N-Type CdS Thin Films Deposited by Spray Pyrolysis

MRS Proceedings ◽

10.1557/proc-77-311 ◽

1986 ◽

Vol 77 ◽

Author(s):

Y. T. Kim ◽

S. C. Park ◽

S. K. Chung

Keyword(s):

Thin Films ◽

Doping Level ◽

Thermal Activation ◽

Energy Gap ◽

Indium Content ◽

Optical Energy Gap ◽

Electrical And Optical Properties ◽

Free Carriers ◽

Order Of Magnitude ◽

Cds Thin Films

ABSTRACTEffects of the doping level of indium impurity on electrical and optical properties of the CdS thin films, prepared with solution-sprayed method have been studied. The density of free carriers can be raised to an order of magnitude higher than that of non-doped case by increasing doping level of indium up to 0.01mole-% while indium doping does not significantly change the mobility from its value in non-doped samples. The optical energy gap is decreased with increasing indium content while the thermal activation energy remains unchanged. The experimental results are discussed in terms of the self compensation and radiative recombination phenomena.

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Transverse photon drag detection of FIR radiation by free carriers in antimony thin films

Infrared Physics ◽

10.1016/0020-0891(87)90058-3 ◽

1987 ◽

Vol 27 (4) ◽

pp. 241-244 ◽

Cited By ~ 6

Author(s):

S. Marchetti ◽

R. Simili ◽

M. Bernardini ◽

M. Giorgi

Keyword(s):

Thin Films ◽

Free Carriers ◽

Transverse Photon

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Effect of Free Carriers on ac-Driven Electroluminescent Devices with Hydrogenated Amorphous Silicon Carbide Thin Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.5288 ◽

1996 ◽

Vol 35 (Part 1, No. 10) ◽

pp. 5288-5292

Author(s):

Claus-Dieter Abel ◽

Toshihiko Toyama ◽

Tetsuyuki Matsui ◽

Hiroaki Okamoto ◽

Yoshihiro Hamakawa

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Electroluminescent Devices ◽

Amorphous Silicon Carbide ◽

Free Carriers ◽

Hydrogenated Amorphous

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Tin Oxide Based Transparent Ferromagnetic Semiconductor Thin Films by Spray Pyrolysis

MRS Proceedings ◽

10.1557/proc-0962-p09-06 ◽

2006 ◽

Vol 962 ◽

Author(s):

Subhash Chand Kashyap ◽

Kalon Gopinadhan ◽

Sujeet Chaudhary ◽

Dinesh K. Pandya

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Electrical Transport ◽

Spray Pyrolysis Technique ◽

Room Temperature Ferromagnetism ◽

Secondary Phases ◽

Intrinsic Nature ◽

Free Carriers ◽

Transport Studies ◽

Semiconductor Thin Films

ABSTRACTCobalt- and manganese-incorporated SnO2 thin films exhibiting room temperature ferromagnetism have been prepared by spray pyrolysis technique. Analysis of structural, magnetic and electrical properties of Sn1−xCoxO2−δ thin films indicates that the origin of ferromagnetism, seen for x<0.125, lies in the polarization of free carriers, leading to the necessary exchange interaction. The films exhibit a Curie temperature > 500K. The XRD study indicates that Sn1−xCoxO2−δ films with x<0.125 is single phasic with no evidence of any Co clusters or magnetic oxides, which supports the intrinsic nature of the ferromagnetism. The electrical transport studies indicate that extra electrons are generated on Co-incorporation in the SnO2 lattice. In the case of Sn1−xMnxO2·δ films, ferromagnetism is observed in a narrow range of manganese (0.075≤x≤0.10) with an associated increase in carrier concentration. The detailed analysis of various properties suggests that Mn-ions have been incorporated in the SnO2 lattice, and there is absence of any Mn-clusters, Mn-related secondary phases.

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Free Carriers versus Excitons in CH3NH3PbI3 Perovskite Thin Films at Low Temperatures: Charge Transfer from the Orthorhombic Phase to the Tetragonal Phase

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.6b00781 ◽

2016 ◽

Vol 7 (13) ◽

pp. 2316-2321 ◽

Cited By ~ 59

Author(s):

Le Quang Phuong ◽

Yasuhiro Yamada ◽

Masaya Nagai ◽

Naoki Maruyama ◽

Atsushi Wakamiya ◽

...

Keyword(s):

Thin Films ◽

Charge Transfer ◽

Tetragonal Phase ◽

Low Temperatures ◽

Orthorhombic Phase ◽

Free Carriers

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Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions

Active and Passive Electronic Components ◽

10.1155/1991/47924 ◽

1991 ◽

Vol 14 (3) ◽

pp. 151-161 ◽

Cited By ~ 1

Author(s):

G. Campet ◽

C. Geoffroy ◽

S. J. Wen ◽

J. Portier ◽

P. Keou ◽

...

Keyword(s):

Thin Films ◽

Solar Cells ◽

Thermal Treatment ◽

Hall Effect ◽

Electronic Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Electrical Measurements ◽

Free Carriers ◽

Ito Thin Films

ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated. Electrical measurements were performed between 95 and 600 K. Free carriers concentration in the film were measured by Hall effect coefficient. Optical indices were determined by computer drawing of charts allowing to simplify Manifacier method.Finally study of SIS tunnel solar cells, based on Si/(RF sputtered) ITO junctions is presented.

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Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy

Journal of Materials Chemistry C ◽

10.1039/c5tc03959b ◽

2016 ◽

Vol 4 (3) ◽

pp. 551-558 ◽

Cited By ~ 6

Author(s):

Hrishikesh Bhunia ◽

Biswajit Kundu ◽

Soumyo Chatterjee ◽

Amlan J. Pal

Keyword(s):

Thin Films ◽

Fermi Energy ◽

Film Formation ◽

Scanning Tunneling Spectroscopy ◽

Tunneling Spectroscopy ◽

Scanning Tunneling ◽

Heterovalent Substitution ◽

Silar Method ◽

Free Carriers ◽

Element Substitution

Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.

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