scholarly journals Synthesis of CH3NH3PbI3 hybrid perovskite crystals for optoelectronic devices

2022 ◽  
Vol 2155 (1) ◽  
pp. 012035
Author(s):  
S Dyussembekova ◽  
V Kinev ◽  
A Smirnova ◽  
P Gladyshev
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
Optoelectronic Devices ◽  
Optimal Conditions ◽  
Review Of The Literature ◽  
Inorganic Perovskite ◽  
X Ray ◽  
Hybrid Perovskite

Abstract This article is deals with the synthesis of hybrid organic-inorganic perovskite crystals. We present a brief review of the literature devoted to the synthesis of perovskite crystals. We have analyzed methods for the synthesis of perovskite crystals to select optimal conditions. Bulk perovskite crystals of CH3NH3PbI3 were synthesized. The resulting crystals were analyzed by X-ray phase analysis, which confirms the formation of tetragonal perovskite crystals and can be used to obtain thin films.

Kinetics of Ion-Exchange Reactions in Hybrid Organic–Inorganic Perovskite Thin Films Studied by In Situ Real-Time X-ray Scattering

2018 ◽  
Vol 9 (23) ◽  
pp. 6750-6754 ◽  
Author(s):  
Alessandro Greco ◽  
Alexander Hinderhofer ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Jan Hagenlocher ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Exchange ◽  
Real Time ◽  
Exchange Reactions ◽  
Inorganic Perovskite ◽  
X Ray ◽  
X Ray Scattering ◽  
Kinetics Of ◽  
Kinetics Of Ion Exchange

scholarly journals Thermal unequilibrium of strained black CsPbI3 thin films

Science ◽  
2019 ◽  
Vol 365 (6454) ◽  
pp. 679-684 ◽  
Author(s):  
Julian A. Steele ◽  
Handong Jin ◽  
Iurii Dovgaliuk ◽  
Robert F. Berger ◽  
Tom Braeckevelt ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Grazing Incidence ◽  
Optically Active ◽  
Wide Angle ◽  
Biaxial Strain ◽  
X Ray ◽  
X Ray Scattering ◽  
Thermal Stability Of

The high-temperature, all-inorganic CsPbI3 perovskite black phase is metastable relative to its yellow, nonperovskite phase at room temperature. Because only the black phase is optically active, this represents an impediment for the use of CsPbI3 in optoelectronic devices. We report the use of substrate clamping and biaxial strain to render black-phase CsPbI3 thin films stable at room temperature. We used synchrotron-based, grazing incidence, wide-angle x-ray scattering to track the introduction of crystal distortions and strain-driven texture formation within black CsPbI3 thin films when they were cooled after annealing at 330°C. The thermal stability of black CsPbI3 thin films is vastly improved by the strained interface, a response verified by ab initio thermodynamic modeling.

Growth and Characterization of High Quality MgO Thin Films by Ultrasonic Spray Pyrolysis

2007 ◽  
Vol 280-283 ◽  
pp. 1171-1174 ◽  
Author(s):  
Ji Ming Bian ◽  
Xiao Min Li ◽  
Xiang Dong Gao ◽  
Wei Dong Yu
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Ultrasonic Spray Pyrolysis ◽  
Optimal Conditions ◽  
Quartz Glass Substrate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ultrasonic Spray ◽  
Resistivity Meter

Ultrasonic spray pyrolysis has been applied to deposit MgO thin films on Si(100) and quartz glass substrate. The microstructures and properties of the as-grown MgO thin films were examined by X-ray diffraction, scanning electron microscopy, spectrophotometer and semiconductor resistivity meter. The results indicates that the MgO thin films deposited under optimal conditions shows smooth and dense surface without visible pores or defects over the substrate, and as well as good thickness uniformity. Almost completely (100)-oriented MgO films with the transmission higher than 90% in UV/VIS region and the resistivity at least in the order of 107Ω-cm were obtained. MgO thin film with such a crystal quality seems to be very suitable for acting as a buffer layer for the subsequent epitaxial growth of films.

Microstructure variations induced by excess PbX2or AX within perovskite thin films

2017 ◽  
Vol 53 (96) ◽  
pp. 12966-12969 ◽  
Author(s):  
Guanhaojie Zheng ◽  
Cheng Zhu ◽  
Yihua Chen ◽  
Juchen Zhang ◽  
Qi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Grazing Incidence ◽  
Stoichiometric Ratio ◽  
Wide Angle ◽  
Two Dimensional ◽  
X Ray ◽  
X Ray Scattering ◽  
Hybrid Perovskite ◽  
Scattering Technique ◽  
The Impact

We investigated the impact of stoichiometric ratio of PbX2/AX on microstructures within hybrid perovskite films, especially on the plane stacking directions, using the two-dimensional synchrotron radiation grazing incidence wide-angle X-ray scattering technique.

Highly Doped P-Type and N-Type ZnS, ZnSe, CdS and CdSe Thin Films Growth by Pulsed Laser Deposition

1994 ◽  
Vol 340 ◽  
Author(s):  
Wenpin P. Shen ◽  
Hoi S. Kwok
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Optoelectronic Devices ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Gaas Substrates ◽  
P Type

ABSTRACTZnS, ZnSe, CdS and CdSe thin films were grown on InP or GaAs substrates with high ptype and n-type doping concentrations by pulsed excimer laser deposition without any postannealing processing. The x-ray diffraction results showed that these thin films were fully epitaxial (in-plane aligned). These high quality films are suitable for use as optoelectronic devices which will operate in the visible region of the spectrum.

X-ray phase analysis with depth profiling for thin films

1992 ◽  
Vol 213 (1) ◽  
pp. 13-18 ◽  
Author(s):  
Q.Z. Cong ◽  
D.Y. Yu ◽  
L.J. Weng ◽  
F.Q. Zhang
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
Depth Profiling ◽  
X Ray

The Effect of Thickness on the Properties of TGZO Thin Films for Optoelectronic Devices

2013 ◽  
Vol 734-737 ◽  
pp. 2124-2127
Author(s):  
T. Zhang ◽  
H. Wang ◽  
Z.Y. Zhong ◽  
C.Y. Yang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optoelectronic Devices ◽  
Visible Spectrum ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Growth Orientation ◽  
Glass Substrates ◽  
Deposited Films ◽  
Co Doped

Titanium and gallium co-doped zinc oxide (TGZO) thin films with highly (002)-preferred orientation were grown on glass substrates by magnetron sputtering. The effect of thickness on structure and optical properties of the deposited films were investigated by X-ray diffractometer and spectrophotometer. The results show that the polycrystalline TGZO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the thickness significantly affects the crystal structure and optical properties of the thin films. It is observed that the average transmitance in the wavelength range of the visible spectrum decreases with the increase of thickness. The TGZO thin film with about 900 nm thickness exhibits the maximum grain size, the lowest dislocation density and the minimum micro strain.

scholarly journals The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6859
Author(s):  
Akhmed Akhmedov ◽  
Aslan Abduev ◽  
Eldar Murliev ◽  
Abil Asvarov ◽  
Arsen Muslimov ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Low Temperature ◽  
Optoelectronic Devices ◽  
Transparent Electrodes ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Ceramic Targets

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

Rapid qualitative phase analysis in highly textured thin films by x-ray diffraction

2008 ◽  
Vol 79 (4) ◽  
pp. 043904 ◽  
Author(s):  
Cesare Borgia ◽  
Sven Olliges ◽  
Ralph Spolenak
Keyword(s):  
Thin Films ◽  
Phase Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Qualitative Phase

scholarly journals Electrodeposition of Bi-Se thin films involving ethylene glycol based electrolytes

2021 ◽  
Vol 11 (1) ◽  
pp. 51-58
Author(s):  
Sevinj Javadova ◽  
Vusala Asim Majidzade ◽  
Akif Shikhan Aliyev ◽  
Asmat Nizami Azizova ◽  
Dilgam Babir Tagiyev
Keyword(s):  
Thin Films ◽  
Ethylene Glycol ◽  
Phase Analysis ◽  
Polarization Curves ◽  
Potential Range ◽  
X Ray ◽  
Galvanostatic Method ◽  
Optimal Mode ◽  
Treatment Step ◽  
Heat Treatment Step

The work is devoted to the electrochemical deposition of Bi-Se thin films from ethylene glycol-based electrolytes. The studies have been carried out by potentiodynamic and galvanostatic methods under various conditions, using Pt and Ni electrodes. By recording cyclic and linear polarization curves, the potential range of deposition of thin Bi-Se films on Pt (-0.75 to -1.2 V) and Ni (0.2 to -0.85 V) electrodes was determined. A comparison of the polarization curves of two electrodes showed that co-electrodeposition of Bi and Se occurs in approximately the same potential range. In order to find the optimal mode and composition of the electrolyte, the effect of various factors (concentration of initial components, temperature, etc.) on the process of co-electrodeposition of Bi with Se was studied. In addition, the samples of Bi-Se thin films obtained on Ni electrodes using the galvanostatic method were studied by scanning electron microscope (SEM) and X-ray phase analysis. The results of X-ray phase analysis confirmed the formation of thin Bi2Se3 films with and without additional heat treatment step. Elemental analysis of obtained films carried out by EDS shows that films contained 62.79 wt. % Bi and 37.21 wt. % Se.

Sign in / Sign up

Export Citation Format

Share Document