scholarly journals Visibility of single layer MoS2 for different dielectric layers on Si substrate

2019 ◽  
Vol 479 ◽  
pp. 012037
Author(s):  
H Yang ◽  
J K Zhang ◽  
C Li ◽  
D Zhao ◽  
D P Wu
Keyword(s):  
Single Layer ◽  
Si Substrate ◽  
Dielectric Layers

Investigation on multilayer microstructure grating for three-port splitting

2016 ◽  
Vol 30 (16) ◽  
pp. 1650195
Author(s):  
Wenhao Shu ◽  
Bo Wang ◽  
Hao Pei ◽  
Hongtao Li ◽  
Li Chen ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Single Layer ◽  
Zeroth Order ◽  
First Order ◽  
Transmission Grating ◽  
Dielectric Layers ◽  
Incident Waves ◽  
Reflection Grating ◽  
Independent Property ◽  
Polarization Independent

A new structure of microstructure reflection three-port beam splitter grating is described in this paper. The grating includes two dielectric layers and a metal slab on the substrate, where incident waves are reflected into the zeroth-order and the ± first-order with polarization-independent property. With the optimized grating profile, reflection efficiencies’ ratios between the first-order and the zeroth-order can reach 0.998 and 1.001 for TE and TM polarizations, respectively. Especially, the reflection grating can diffract efficiencies more than 30% into the ± first-order and the zeroth-order with the incident angular bandwidth of −1.9–1.9[Formula: see text] for TM polarization, which can have merits compared with single-layer transmission grating.

scholarly journals Effect of irradiation upon single layer graphene on SiO2/Si substrate using electron beam irradiation (EBI)

2020 ◽  
Vol 29 ◽  
pp. 115-118
Author(s):  
Ahmad Syahmi Zamzuri ◽  
Nur Idayu Ayob ◽  
Yusof Abdullah ◽  
Nurul Fadzlin Hasbullah
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Beam Irradiation ◽  
Si Substrate ◽  
Layer Graphene

scholarly journals Tribological Characteristics of Single-Layer h-BN Measured by Colloidal Probe Atomic Force Microscopy

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 530
Author(s):  
Tien Van Tran ◽  
Koo-Hyun Chung
Keyword(s):  
Atomic Force Microscopy ◽  
Solid Lubricant ◽  
Normal Force ◽  
Coating Layer ◽  
Single Layer ◽  
Tribological Characteristics ◽  
Si Substrate ◽  
Colloidal Probe ◽  
Force Microscopy ◽  
Atomic Force

The tribological characteristics of single-layer (1L) hexagonal-boron nitride (h-BN) were systematically investigated using colloidal probe atomic force microscopy, with an aim to elucidate the feasibility as a protective coating layer and solid lubricant for micro- and nanodevices. The experiments were performed to detect the occurrence of failure of 1L h-BN for up to 10,000 cycles under various normal forces. The failure of 1L h-BN did not occur for 10,000 cycles under a 10 μN normal force, corresponding to a contact pressure of about 0.34 GPa. However, the complete failure of 1L h-BN occurred faster with an increasing normal force from 20 to 42 μN. It was observed that the SiO2/Si substrate was locally exposed due to defect formation on the 1L h-BN. The Raman spectroscopy measurement results further suggest that the failure was associated with the compressive strain on 1L h-BN. The friction of 1L h-BN before failure was orders of magnitude smaller than that of a SiO2/Si substrate. The overall results indicate the feasibility of atomically thin h-BN as a protective coating layer and solid lubricant. In particular, the results of this work provide fundamental tribological characteristics of pristine h-BN as a guide, which may be helpful in other practical deposition methods for atomically thin h-BN with enhanced tribological characteristics.

Memory Properties of SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 Thin Films Prepared on Si Substrate

2010 ◽  
Vol 434-435 ◽  
pp. 304-306
Author(s):  
Wen Cheng Tzou ◽  
Kai Huang Chen ◽  
Cheng Fu Yang ◽  
Ying Chung Chen
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Single Layer ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Chamber Pressure ◽  
Rf Power ◽  
Si Substrate ◽  
Oxygen Concentrations

In this study, ferroelectric thin films of SrBi2Ta2O9 (SBT) or bilayered SrBi2Ta2O9/ Ba(Zr0.1Ti0.9)O3 (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. Ferroelectric thin films are deposited on Si substrate under the RF power of 80 W, chamber pressure of 10 mTorr, substrate temperature of 550oC, and different oxygen concentrations. The surface morphology of deposited thin films is observed from the FESEM images, and the memory windows and leakage current of the Al/SBT/BZT/Si (MFS) structure are measured by an impendence phase analyzer and a semiconductor parameter analyzer, respectively. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. We find that the memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure.

Effects of Indium (In) to the Efficiency Tandem Cell Ga1-xInxP/Silicon for Solar Cell Application

2015 ◽  
Vol 754-755 ◽  
pp. 1182-1186 ◽  
Author(s):  
Suhaila Mohd Zahari ◽  
Rozana A.M. Osman ◽  
Mohd Natashah Norizan ◽  
Ili Salwani Mohamad ◽  
Azura Malini ◽  
...  
Keyword(s):  
Solar Cell ◽  
Gallium Phosphide ◽  
Single Layer ◽  
Fabrication Method ◽  
Si Substrate ◽  
Solar Cell Application ◽  
Previous Record ◽  
Simulation Tools ◽  
Tandem Cell ◽  
A Value

In this paper, the contribution of Indium (In) to the Gallium Phosphide (GaP) composition of solar cell was investigated to know the effectiveness of the In when its being substitute to GaP layer on the top layer of Silicon (Si) substrate. The substitution was made to the Ga1-xInxP for the range of (0≤x≤0.5). The highest efficiency was 10.1235% for x=0.5 for the Ga1-xInxP. In contribution shows a higher efficiency compared to single layer GaP which only about 5.40608%. As the x composition increased, the efficiency becomes higher for each composition increment. The rate of efficiency, increased about 88% and improves current density with a value up to 13.1134mA/cm2.The efficiency obtained in this work is considerably high using simulation tools compared to the previous record for InGaP/Silicon reported in Feb 2014 about 6~11.2% by fabrication method.

scholarly journals Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors

2009 ◽  
Vol 21 (1) ◽  
pp. 015705 ◽  
Author(s):  
Lei Liao ◽  
Jingwei Bai ◽  
Yongquan Qu ◽  
Yu Huang ◽  
Xiangfeng Duan
Keyword(s):  
Single Layer ◽  
Single Layer Graphene ◽  
Si Substrate ◽  
Layer Graphene

scholarly journals Printing of Crumpled CVD Graphene via Blister-Based Laser-Induced Forward Transfer

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1103 ◽  
Author(s):  
Maxim S. Komlenok ◽  
Pavel A. Pivovarov ◽  
Margarita A. Dezhkina ◽  
Maxim G. Rybin ◽  
Sergey S. Savin ◽  
...  
Keyword(s):  
Carbon Film ◽  
Graphene Film ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Original Structure ◽  
Si Substrate ◽  
Layer Graphene ◽  
Forward Transfer ◽  
Laser Techniques ◽  
Original Crystal

The patterning and transfer of a two-dimensional graphene film without damaging its original structure is an urgent and difficult task. For this purpose, we propose the use of the blister-based laser-induced forward transfer (BB-LIFT), which has proven itself in the transfer of such delicate materials. The ease of implementation of laser techniques reduces the number of intermediate manipulations with a graphene film, increasing its safety. The work demonstrates the promise of BB-LIFT of single-layer graphene from a metal surface to a SiO2/Si substrate. The effect of the parameters of this method on the structure of transferred graphene islands is investigated. The relevance of reducing the distance between irradiating and receiving substrates for the transfer of free-lying graphene is demonstrated. The reasons for the damage to the integrity of the carbon film observed in the experiments are discussed. The preservation of the original crystal structure of transferred graphene is confirmed by Raman spectroscopy.

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