Tunable physical properties of Al-doped ZnO thin films by O2 and Ar plasma treatments

Abstract Al-doped ZnO (AZO) is a promising transparent conducting oxide that can replace indium tin oxide (ITO) owing to its excellent flexibility and eco-friendly characteristics. However, it is difficult to immediately replace ITO with AZO because of the difference in their physical properties. Here, we study the changes in the physical properties of AZO thin films using Ar and O2 plasma treatments. Ar plasma treatment causes the changes in the surface and physical properties of the AZO thin film. The surface roughness of the AZO thin film decreases, the work function and bandgap slightly increase, and the sheet resistance significantly decreases. In contrast, a large work function change is observed in the AZO thin film treated with O2 plasma; however, the change in other characteristics is not significant. Therefore, the results indicate that post-treatment using plasma can accelerate the development of high-performance transparent devices.

Download Full-text

Effect of annealing on the morphology and the optical characterization of the AZO:Co thin film prepared by Sol–Gel process

International Journal of Modern Physics B ◽

10.1142/s0217979219503454 ◽

2019 ◽

Vol 33 (29) ◽

pp. 1950345

Author(s):

Seyedeh-Niousha Mirmohammad-Hosseini-Oushani ◽

Nasser Zare-Dehnavi

Keyword(s):

Thin Film ◽

Thin Films ◽

Glass Substrate ◽

Optical Transmission ◽

Sol Gel ◽

Zno Thin Film ◽

Azo Thin Film ◽

Three Samples ◽

Doped Zno ◽

Co Doped

In this work, the ZnO thin film, the Al-doped ZnO (AZO) thin film (0.98M ZnO, 0.02M Al) and the (Al,Co) co-doped ZnO thin film (AZO:Co) (0.95M ZnO, 0.02M Al, 0.03M Co) were deposited on the glass substrate by the Sol–Gel method. We fabricated a sample of the ZnO thin film, a sample of the AZO thin film and three samples of AZO:Co thin films. The spin-coating was used to deposit thin film on the glass substrate. The ZnO and the AZO thin films were annealed at 450[Formula: see text]C while three samples of the AZO:Co thin films were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. In order to prepare three samples of the AZO:Co thin films, we deposited the (Al,Co) co-doped ZnO on the glass substrate for 20 s then all samples were per-heated at 80[Formula: see text]C for 10 min. we repeated this deposition process five times for each sample. Finally, three samples were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. The procedure to prepare of the ZnO and AZO thin films was like the AZO:Co thin films except that the annealing temperature was 450[Formula: see text]C. The structural and optical properties of the thin films were investigated by X-ray diffraction technique, UV-Vis spectrophotometer and Field Emission Scanning Electron Microscopy (FESEM). Results indicated that (Al,Co) co-doping in the ZnO thin film improve the optical transmission while changes in the lattice structure is small with respect to the AZO thin film. Also, the AZO:Co thin film which was annealed at 450[Formula: see text]C exhibited simultaneously the high thickness and high optical transmission.

Download Full-text

High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

Journal of Materials Chemistry C ◽

10.1039/d1tc00202c ◽

2021 ◽

Vol 9 (13) ◽

pp. 4522-4531

Author(s):

Chao Yun ◽

Matthew Webb ◽

Weiwei Li ◽

Rui Wu ◽

Ming Xiao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Resistive Switching ◽

Growth Temperature ◽

High Performance ◽

20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Download Full-text

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.764-765.138 ◽

2015 ◽

Vol 764-765 ◽

pp. 138-142 ◽

Cited By ~ 1

Author(s):

Fa Ta Tsai ◽

Hsi Ting Hou ◽

Ching Kong Chao ◽

Rwei Ching Chang

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Electric Properties ◽

X Ray Diffraction ◽

Layer Deposition ◽

Azo Thin Film ◽

Aluminum Doped Zinc Oxide ◽

Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Download Full-text

Physical properties of graphene oxide GO-doped ZnO thin films for optoelectronic application

Applied Physics A ◽

10.1007/s00339-020-04269-9 ◽

2021 ◽

Vol 127 (2) ◽

Author(s):

M. Karyaoui ◽

D. Ben Jemia ◽

M. Daoudi ◽

A. Bardaoui ◽

A. Boukhachem ◽

...

Keyword(s):

Thin Films ◽

Graphene Oxide ◽

Physical Properties ◽

Zno Thin Films ◽

Optoelectronic Application ◽

Doped Zno

Download Full-text

Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors

Applied Physics Letters ◽

10.1063/5.0038416 ◽

2021 ◽

Vol 118 (12) ◽

pp. 123504

Author(s):

Ablat Abliz ◽

Xiongxiong Xue ◽

Xingqiang Liu ◽

Guoli Li ◽

Liming Tang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Performance ◽

Rational Design ◽

Doped Zno ◽

Co Doped

Download Full-text

High Performance Metal Surface Coating Using Ta2O5 Thin Film Prepared by D.C. Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.979.240 ◽

2014 ◽

Vol 979 ◽

pp. 240-243

Author(s):

Narathon Khemasiri ◽

Chanunthorn Chananonnawathorn ◽

Mati Horprathum ◽

Pitak Eiamchai ◽

Pongpan Chindaudom ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Film Thickness ◽

Metal Surface ◽

High Performance ◽

Grazing Incidence ◽

Surface Finishing ◽

Afm Micrographs ◽

Protective Performance

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.

Download Full-text

Study on the physical properties of indium tin oxide thin films deposited by microwave-assisted spray pyrolysis

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.09.024 ◽

2017 ◽

Vol 728 ◽

pp. 1338-1345 ◽

Cited By ~ 8

Author(s):

Lihua Zhang ◽

Jianbo Lan ◽

Jianyu Yang ◽

Shenghui Guo ◽

Jinhui Peng ◽

...

Keyword(s):

Thin Films ◽

Physical Properties ◽

Spray Pyrolysis ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Oxide Thin Films ◽

Microwave Assisted

Download Full-text

Formation of ZnO Doped with Mn Thin Film by Electrodeposition and Magnetic Behaviour.

MRS Proceedings ◽

10.1557/proc-879-z7.17 ◽

2005 ◽

Vol 879 ◽

Author(s):

M. Abid ◽

C. Terrier ◽

J-P Ansermet ◽

K. Hjort

Keyword(s):

Thin Film ◽

Thin Films ◽

Room Temperature ◽

Magnetic Behaviour ◽

Spectroscopic Methods ◽

X Ray Diffraction ◽

X Ray ◽

Doped Zno ◽

Mn Doped ◽

Weak Ferromagnetic

AbstractFollowing the theory, ferromagnetism is predicted in Mn- doped ZnO, Indeed, ferromagnetism above room temperature was recently reported in thin films as well as in bulk samples made of this material. Here, we have prepared Mn doped ZnO by electrodeposition. The samples have been characterized by X-ray diffraction and spectroscopic methods to ensure that the dopants are substitutional. Some samples exhibit weak ferromagnetic properties at room temperature, however to be useful for spintronics this material need additional carriers provided by others means.

Download Full-text