scholarly journals Thin film growth of MAX phases as functional materials

Author(s):  
Abhijit Biswas ◽  
Varun Natu ◽  
Anand B Puthirath

Abstract Layered nanolaminate ternary carbides, nitrides and carbonitrides with general formula Mn+1 AXn or MAX (n = 1, 2, or 3, M is an early transition metal, A is mostly group 13 or 14 element, and X is C and/or N) has revolutionized the world of nanomaterials, due to the coexistence of both ceramic and metallic nature, giving rise to exceptional mechanical, thermal, electrical, chemical properties and wide range of applications. Although several solid-state bulk synthesis methods have been developed to produce a variety of MAX phases, however, for certain applications, the growth of MAX phases, especially in its high-quality epitaxial thin films form is of increasing interest. Here, we summarize the progress made thus far in epitaxial growth and property evaluation of MAX phase thin films grown by various deposition techniques. We also address the important future research directions to be made in terms of thin-film growth. Overall, in the future, high-quality single-phase epitaxial thin film growth and engineering of chemically diverse MAX phases may open up interesting new avenues for next-generation technology.

1997 ◽  
Vol 502 ◽  
Author(s):  
H. Sato ◽  
H. Yamamoto ◽  
M. Naito

ABSTRACTThin films of La2−xSrxCuO4 (LSCO) and La2CuO4+δ (LCO) were grown by reactive coevaporation. We obtained LSCO thin films on (001) LaSrA104 (LSAO) substrates with Tc(R=0) = 44 K, which is higher than that for bulk samples. A structural analysis indicates that the increase in Tc is due to compressive strain generated by the lattice mismatch. A similar strain effect is suggested from the substrate dependence of Tc for superconducting LCO thin films, for which Tc(R=0) reached 50 K on (001) LSAO substrates. We also succeeded in obtaining high-quality LSCO ultrathin films without any buffer or cap layers on (001) LSAO substrates, but not on substrates of other materials with the larger lattice mismatch with LSCO. These results demonstrate that the lattice mismatch with the substrates is important in thin-film growth of LSCO and LCO.


2017 ◽  
Vol 5 (21) ◽  
pp. 5090-5095 ◽  
Author(s):  
H. Wang ◽  
B. He ◽  
F. Liu ◽  
C. Stevens ◽  
M. A. Brady ◽  
...  

The first experimental observation of a rare re-entrant transition during COF thin film growth reveals independent nucleation and growth kinetic processes.


2015 ◽  
Vol 119 (48) ◽  
pp. 26968-26979 ◽  
Author(s):  
Tao Xu ◽  
Susanne Mohr ◽  
Max Amende ◽  
Mathias Laurin ◽  
Tibor Döpper ◽  
...  

1998 ◽  
Author(s):  
J. A. Schultz ◽  
K. Eipers-Smith ◽  
K. Waters ◽  
S. Schultz ◽  
M. Sterling ◽  
...  

2010 ◽  
Vol 117 ◽  
pp. 55-61
Author(s):  
Masao Kamiko ◽  
Ryoichi Yamamoto

The effects of several surfactants on the homoepitaxial and heteroepitaxial growth of metallic films and multilayers have been studied and compared. Our measurements clearly revealed that pre-deposition of a small amount of surfactant prior to the adatom deposition changed thin film growth mode and structure. The pre-deposited surfactant enhanced layer-by-layer (LBL) growth of the homoepitaxial and heteroepitaxial growth of metallic films. The surfactant also enhanced the epitaxial growth of metallic multilayer.


2018 ◽  
Vol 31 (5) ◽  
pp. 055017 ◽  
Author(s):  
A Torgovkin ◽  
S Chaudhuri ◽  
A Ruhtinas ◽  
M Lahtinen ◽  
T Sajavaara ◽  
...  

2015 ◽  
Vol 7 (2) ◽  
pp. 1823-1828
Author(s):  
Asim Aijaz ◽  
Zaheer Uddin

Hydrogenated amorphous carbon (a-C:H) thin film growth using plasma-assisted deposition is studied using Monte Carlo based simulation. The effect of energetic bombardment of the ionized depositing species as well as ionized buffer gas species on the film growth and the resulting film properties is investigated. The ion energies that assist the a-C:H film growth from low density structures to high density structures such as diamond-like carbon (DLC) are used and the effect of energy and composition of the depositing species on the C-C and C-H bonding and the film structure are analyzed. It is found that the ion bombardment favors the formation of a-C:H films with low H contents, high density and superior mechanical strength of the resulting thin films and is therefore an effective way to tailor-made a-C:H thin film growth for specific applications.


1999 ◽  
Vol 14 (5) ◽  
pp. 2162-2172 ◽  
Author(s):  
M. Brinkmann ◽  
S. Graff ◽  
C. Chaumont ◽  
J-J. André

A new thin film synthesis route based on the electrochemical oxidation of PcLi2 and deposition of lithium phthalocyanine (PcLi) onto indium tin oxide (ITO) substrate is demonstrated. The effects on the thin film morphology of various parameters such as the electrolysis time, the nature of the solvent, and the oxidation potential are investigated. The thin film growth is studied via x-ray diffraction, potential step experiments, and ex situ scanning electron microscopy. Various morphologies of the x-form thin films are observed for different electrolysis times and solvents. Thin films grown in acetonitrile of thickness above 1 μm consist in unidirectionally oriented needle-shaped crystallites.


1998 ◽  
Vol 526 ◽  
Author(s):  
R. Hourlet ◽  
R. Vacassy ◽  
H. Hofmann ◽  
W. Vogel

AbstractA laser spark atomizer (LINA-SPARK™), LSA, has been used for preparing powder particles from SnO2, Al2O3 and ZrO2 ceramic specimen. It is shown that this technique can be used for preparing thin films by direct deposition on a substrate. The as-prepared powder can also be redispersed and deposited using ultrasonic nebulization (Pyrosol) deposition. The latter approach is especially suited for deposition of controlled-size and multicomponent thin films.The coupling of the LSA to an induced coupled plasma (ICP) emission spectrometer is also discussed and compared with laser ablation. Generally powder particles produced from LSA present a narrower size distribution as powders prepared by laser ablation. As a result, the quantitative elemental analysis of solids are improved with full benefit of the sensitivity and detection limits of the ICP are lowered.


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