Interfacial structural characteristics and grain-size limits in nanocrystalline materials crystallized from amorphous solids

1995 ◽  
Vol 51 (1) ◽  
pp. 18-27 ◽  
Author(s):  
K. Lu
2007 ◽  
Vol 14 (01) ◽  
pp. 141-145
Author(s):  
Q. Y. ZHANG ◽  
S. W. JIANG ◽  
Y. R. LI

The rapid thermal annealing (RTA) process was adapted to crystallize the amorphous ( Ba,Sr ) TiO 3 thin films prepared on Si (111) substrates by RF magnetic sputtering deposition. The effect of annealing temperature, heating rate and duration time on crystallization was studied through X-ray diffraction and atomic force microscopy. The result shows that the crystallinity and grain size were strongly dependent on the temperature, heating rate, and duration time. Higher heating rate leads to smaller grain size. In high heating rate, the grain size shows different dependence of temperature from that of low heating rate. For a heating rate of 50°C/s, the grain size decreased with temperature increasing below 700°C, while after that temperature, the grain size increased slightly with the temperature increasing. At a certain temperature, the crystallinity and surface roughness improved with increase in annealing time, while grain size changed little. The effect of rapid heating rate on the nucleation and grain growth has been discussed, which contributes to the limited grain size of the annealed ( Ba,Sr ) TiO 3 thin films.


2009 ◽  
Vol 475 (1-2) ◽  
pp. 893-897 ◽  
Author(s):  
Zheng Chen ◽  
Feng Liu ◽  
Wei Yang ◽  
Haifeng Wang ◽  
Gencang Yang ◽  
...  

2011 ◽  
Vol 1308 ◽  
Author(s):  
Andreas Bill ◽  
Ralf B. Bergmann

ABSTRACTWe present an overview of the theory developed over the last few years to describe the crystallization of amorphous solids. The microstructure of the crystallizing solid is described in terms of the grain size distribution (GSD). We propose a partial differential equation that captures the physics of crystallization in random nucleation and growth processes. The analytic description is derived for isotropic and anisotropic growth rates and allows for the analysis of different stages of crystallization, from early to full crystallization. We show how the timedependence of effective nucleation and growth rates affect the final distribution. In particular, we demonstrate that for cases described by the Kolmogorov-Avrami-Mehl-Johnson (KAMJ) model applicable to a large class of crystallization processes a lognormal type distribution is obtained at full crystallization. The application of the theory to the crystallization of silicon thin films is discussed.


2001 ◽  
Author(s):  
J. Narayan ◽  
H. Wang ◽  
A. Kvit

Abstract We have synthesized nanocrystalline thin films of Cu, Zn, TiN, and WC having uniform grain size in the range of 5 to 100 nm. This was accomplished by introducing a couple of manolayers of materials with high surface and have a weak interaction with the substrate. The hardness measurements of these well-characterized specimens with controlled microstructures show that hardness initially increases with decreasing grain size following the well-known Hall-Petch relationship (H∝d−½). However, there is a critical grain size below which the hardness decreases with decreasing grain size. The experimental evidence for this softening of nanocrystalline materials at very small grain sizes (referred as reverse Hall-Petch effect) is presented for the first time. Most of the plastic deformation in our model is envisioned to be due to a large number of small “sliding events” associated with grain boundary shear or grain boundary sliding. This grain-size dependence of hardness can be used to create functionally gradient materials for improved adhesion and wear among other improved properties.


2020 ◽  
Vol 43 (8) ◽  
pp. 2076-2091 ◽  
Author(s):  
A. B. Novak ◽  
M. C. Pelletier ◽  
P. Colarusso ◽  
J. Simpson ◽  
M. N. Gutierrez ◽  
...  

Abstract Increasing the protection of coastal vegetated ecosystems has been suggested as one strategy to compensate for increasing carbon dioxide (CO2) in the atmosphere as the capacity of these habitats to sequester and store carbon exceeds that of terrestrial habitats. Seagrasses are a group of foundation species that grow in shallow coastal and estuarine systems and have an exceptional ability to sequester and store large quantities of carbon in biomass and, particularly, in sediments. However, carbon stocks (Corg stocks) and carbon accumulation rates (Corg accumulation) in seagrass meadows are highly variable both spatially and temporally, making it difficult to extrapolate this strategy to areas where information is lacking. In this study, Corg stocks and Corg accumulation were determined at 11 eelgrass meadows across New England, representing a range of eutrophication and exposure conditions. In addition, the environmental factors and structural characteristics of meadows related to variation in Corg stocks were identified. The objectives were accomplished by assessing stable isotopes of δ13C and δ15N as well as %C and %N in plant tissues and sediments, measuring grain size and 210Pb of sediment cores, and through assessing site exposure. Variability in Corg stocks in seagrass meadows is well predicted using commonly measured environmental variables such as grain size distribution. This study allows incorporation of data and insights for the northwest Atlantic, where few studies on carbon sequestration by seagrasses have been conducted.


2019 ◽  
Vol 51 (1) ◽  
pp. 513-530 ◽  
Author(s):  
Zhenbo Zhang ◽  
Éva Ódor ◽  
Diana Farkas ◽  
Bertalan Jóni ◽  
Gábor Ribárik ◽  
...  

Abstract Nanocrystalline materials reveal excellent mechanical properties but the mechanism by which they deform is still debated. X-ray line broadening indicates the presence of large heterogeneous strains even when the average grain size is smaller than 10 nm. Although the primary sources of heterogeneous strains are dislocations, their direct observation in nanocrystalline materials is challenging. In order to identify the source of heterogeneous strains in nanocrystalline materials, we prepared Pd-10 pct Au specimens by inert gas condensation and applied high-pressure torsion (HPT) up to γ ≅ 21. High-resolution transmission electron microscopy (HRTEM) and molecular dynamic (MD) simulations are used to investigate the dislocation structure in the grain interiors and in the grain boundary (GB) regions in the as-prepared and HPT-deformed specimens. Our results show that most of the GBs contain lattice dislocations with high densities. The average dislocation densities determined by HRTEM and MD simulation are in good correlation with the values provided by X-ray line profile analysis. Strain distribution determined by MD simulation is shown to follow the Krivoglaz–Wilkens strain function of dislocations. Experiments, MD simulations, and theoretical analysis all prove that the sources of strain broadening in X-ray diffraction of nanocrystalline materials are lattice dislocations in the GB region. The results are discussed in terms of misfit dislocations emanating in the GB regions reducing elastic strain compatibility. The results provide fundamental new insight for understanding the role of GBs in plastic deformation in both nanograin and coarse grain materials of any grain size.


Materials ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 1739 ◽  
Author(s):  
Kyungsoo Jang ◽  
Youngkuk Kim ◽  
Joonghyun Park ◽  
Junsin Yi

We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a Si1−xGex thin film was crystallized using different excimer laser densities. We found that the optimum energy density to obtain maximum grain size depends on the Ge content in the poly-Si1−xGex thin film; we also confirmed that the grain size of the poly-Si1−xGex thin film is more sensitive to energy density than the poly-Si thin film. The maximum grain size of the poly-Si1−xGex film was 387.3 nm for a Ge content of 5.1% at the energy density of 420 mJ/cm2. Poly-Si1−xGex TFT with different Ge concentrations was fabricated, and their structural characteristics were analyzed using Raman spectroscopy and atomic force microscopy. The results showed that, as the Ge concentration increased, the electrical characteristics, such as on current and sub-threshold swing, were deteriorated. The electrical characteristics were simulated by varying the density of states in the poly-Si1−xGex. From this density of states (DOS), the defect state distribution connected with Ge concentration could be identified and used as the basic starting point for further analyses of the poly-Si1−xGex TFTs.


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