Structure and process development of wafer level embedded SiP (System in Package) for mobile applications

Author(s):  
Gi-Jo Jung ◽  
Byoung-Yool Jeon ◽  
In-Soo Kang
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.


2005 ◽  
Vol 127 (1) ◽  
pp. 1-6 ◽  
Author(s):  
K.-F. Becker ◽  
T. Braun ◽  
A. Neumann ◽  
A. Ostmann ◽  
E. Coko ◽  
...  

One of the general trends in microelectronics packaging is the constant miniaturization of devices. This has led to the development of maximum miniaturization of components on Si level, i.e., CSPs and Flip Chips. To further integrate more functionality into devices, and to further increase the degree of miniaturization, packaging development focus is switching from single chip packaging to the realization of systems in package, SiPs. Two main approaches do exist to realize this goal: one is to integrate all components into one dedicated package, yielding maximum miniaturization for a special application, but little flexibility as far as system design is concerned. The other is to create modular stackable components that can be assembled into a functional system. This integrates both flexibility in system design by exchangeable components and increased reliability potential, as single components can be tested separately. This last approach was considered a promising choice for the generation of SiPs. Within this paper a packaging process is introduced that allows the wafer level manufacturing of stackable, encapsulated devices. Using a transfer molded epoxy demonstrator, a proof-of-concept is performed showing the feasibility of the stackable package approach. This is achieved by combining wafer level encapsulation and molded interconnect device technology. An electroless process for metallization and laser techniques for structuring the metallization layer have been applied to generate structures for reliable interconnects capable for the use of lead-free solders. Summarized, this paper presents the process development and feasibility analysis of wafer level packaging technologies for modular SiP solutions based on a duromer MID approach.


2012 ◽  
Vol 5 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Yoshimi Takahashi ◽  
Rajiv Dunne ◽  
Masazumi Amagai ◽  
Yohei Koto ◽  
Shoichi Iriguchi ◽  
...  

2015 ◽  
Vol 2015 (1) ◽  
pp. 000822-000826 ◽  
Author(s):  
Won Kyoung Choi ◽  
Duk Ju Na ◽  
Kyaw Oo Aung ◽  
Andy Yong ◽  
Jaesik Lee ◽  
...  

The market for portable and mobile data access devices connected to a virtual cloud access point is exploding and driving increased functional convergence as well as increased packaging complexity and sophistication. This is creating unprecedented demand for higher input/output (I/O) density, higher bandwidths and low power consumption in smaller package sizes. There are exciting interconnect technologies in wafer level packaging such as eWLB (embedded Wafer Level Ball Grid Array), 2.5D interposers, thin PoP (Package-on-Package) and TSV (Through Silicon Via) interposer solutions to meet these needs. eWLB technologies with the ability to extend the package size beyond the area of the chip are leading the way to the next level of high density, thin packaging capability. eWLB provides a robust packaging platform supporting very dense interconnection and routing of multiple die in very reliable, low profile, low warpage 2.5D and 3D solutions. The use of these embedded eWLB packages in a side-by-side configuration to replace a stacked package configuration is critical to enable a more cost effective mobile market capability. Combining the analog or memory device with digital logic device in a semiconductor package can provide an optimum solution for achieving the best performance in thin, multiple-die integration aimed at very high performance. This paper highlights the rapidly moving trend towards eWLB packaging technologies with ultra fine 2/2μm line width and line spacing and multi-layer RDL. A package design study, process development and optimization, and mechanical characterization will be discussed as well as test vehicle preparation. JEDEC component level reliability test results will also be presented.


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