SPDT RF MEMS switch using a single bias voltage and based on dual series and shunt capacitive MEMS switches

RF MEMS switch lifetimes are limited by stiction of the moving components and degradation of the metal to metal contact points during cycling. Currently, maximum switch lifetimes are around 10 to 25 billion cycles. Past experimentation has shown that some stiction problems can be overcome by carefully controlling the operating parameters, but problems at the contact points remain [1]. It is believed that by developing a set of tribological design rules which limit the factors leading to catastrophic failure, switches can operate in excess of 100 billion cycles. Recent research has quantified the reliability and durability of gold contact points on RF MEMS switches as a function of current [2]. Most experimentation on RF MEMS switches has focused on controlling the operating parameters such as current, voltage, electrode materials, contact area, switching mode and force; however, limited work has been performed on a single device type in multiple environmentally controlled testing conditions such as vacuum, cryogenic temperatures, etc. This presentation will discuss performance of the wiSpry RF MEMS switch focusing on quantification of device reliability and failure mechanisms under various atmospheric and temperature conditions. Environmental testing conditions include switching in open air, vacuum and inert gasses, in temperatures ranging from 294 K to 4 K.

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The Effect of Dielectric Charging on Capacitive MEMS Switch

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.511-512.732 ◽

2014 ◽

Vol 511-512 ◽

pp. 732-736

Author(s):

Qin Wen Huang ◽

Xiang Guang Li ◽

Yun Hui Wang ◽

Yu Bin Jia

Keyword(s):

Rf Mems ◽

Actuation Voltage ◽

Deposition Process ◽

Dielectric Surface ◽

One Dimensional ◽

Mems Switches ◽

Dielectric Charging ◽

Mems Switch ◽

Rf Mems Switches ◽

Capacitive Mems

Based on a one-dimensional model of dielectric charging for capacitive RF MEMS switches, the accumulated charge density and actuation voltage shift were simulated. The results illustrate that rougher surface can reduce dielectric charging, so the dielectric layer should be fabricated much rougher during deposition process. But the capacitance ratio of switch will be decreased with rougher surface, which can cause a reduction of switch performance. Thus the dielectric surface roughness should be balanced in reliability and isolation.

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Impact Velocity Analysis of Capacitive RF-MEMS Switch

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.981.560 ◽

2014 ◽

Vol 981 ◽

pp. 560-563

Author(s):

Rui Wu ◽

Ming Xin Song

Keyword(s):

Differential Equation ◽

Influencing Factors ◽

Impact Velocity ◽

Bias Voltage ◽

Rf Mems ◽

Velocity Analysis ◽

Rf Mems Switch ◽

Rectangular Wave ◽

Mems Switch ◽

Simulation Results

Impact velocity is an important performance parameter for capacitive RF-MEMS switch. This paper establishes a differential equation, in order to analyse the influencing factors of impact velocity. The simulation results show that impact velocity can reach 1.5m/s when bias voltage equals to 0.7V, frequency equals to 3×105Hz, voltage type adopts rectangular wave.

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The Oxygen Plasma Dry Release Process of the Membrane Bridge of RF MEMS Switches

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.562-565.1238 ◽

2013 ◽

Vol 562-565 ◽

pp. 1238-1241

Author(s):

Li Li Jiang ◽

Shi Xing Jia ◽

J. Zhu

Keyword(s):

Oxygen Plasma ◽

Rf Mems ◽

Process Time ◽

Bottom Surface ◽

Release Process ◽

Rf Mems Switch ◽

Mems Switches ◽

Mems Switch ◽

Rf Mems Switches ◽

Dry Etch

In this paper the oxygen plasma dry release process for membrane-bridge RF MEMS switches is studied and several methods are used to improve the dry release process. The residual PR (Photoresist) on the device substrate after different process time are observed and measured in this paper. The measured data shows that the residual PR exponentially reduces with etch time. It is found that the residual PR on the bottom surface of the membrane bridge is more than that on the substrate. The completely released RF MEMS switch using oxygen plasma dry etch process is obtained.

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Effect of wafer-level silicon cap packaging on BiCMOS embedded RF-MEMS switch performance

Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) ◽

10.4071/2017-nor-wipf ◽

2017 ◽

Vol 2017 (NOR) ◽

pp. 1-4

Author(s):

Selin Tolunay Wipf ◽

Alexander Göritz ◽

Matthias Wietstruck ◽

Maurizio Cirillo ◽

Christian Wipf ◽

...

Keyword(s):

Rf Mems ◽

Wafer Level ◽

3D Fem ◽

Rf Mems Switch ◽

Mems Switches ◽

Mems Switch ◽

Rf Mems Switches ◽

Bicmos Technology ◽

Switch Performance ◽

Rf Performance

Abstract In this paper, the effect of silicon (Si) cap packaging on the BiCMOS embedded RF-MEMS switch performance is studied. The RF-MEMS switches are designed and fabricated in a 0.25μm SiGe BiCMOS technology for K-band (18 – 27 GHz) applications. The packaging is done based on a wafer-to-wafer bonding technique and the RF-MEMS switches are electrically characterized before and after the Si cap packaging. The experimental data shows the effect of the wafer-level Si cap package on the C-V and S-parameter measurements. The performed 3D FEM simulations prove that the low resistive Si cap, specifically 1 Ω·cm, results in a significant RF performance degradation of the RF-MEMS switch in terms of insertion loss.

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Application of RF MEMS Switch for Reconfiguring Micromachined Antennas

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.704.293 ◽

2014 ◽

Vol 704 ◽

pp. 293-298

Author(s):

Jija Rajmohan ◽

M.R. Baiju

Keyword(s):

Rf Mems ◽

Low Voltage ◽

Actuation Voltage ◽

Rf Mems Switch ◽

Capacitive Switch ◽

Mems Switches ◽

Wireless Applications ◽

Mems Switch ◽

Rf Components ◽

Rf Mems Switches

For mobile and wireless applications where the size of the system has to be minimized, antenna and RF components are to be integrated on to the same substrate. The contradicting requirements of the substrate with respect to the antenna and the RF circuit can be resolved by using micromachined antennas. If the principle of reconfigurability is applied to the micromachined antenna, it increases the versatality of the system. This paper proposes reconfigurability of micromachined antennas using RF MEMS switches. In the case of micromachined antennas, which involve low voltage signals, RF MEMS switches with low actuation voltage are required for achieving reconfigurability. In this paper an RF MEMS capacitive switch operating at a low actuation voltage of 1 Volt is presented

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Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

Micro and Nanosystems ◽

10.2174/1876402912999201102200350 ◽

2020 ◽

Vol 12 ◽

Author(s):

Pampa Debnath ◽

Ujjwal Mondal ◽

Arpan Deyasi

Keyword(s):

Transmission Line ◽

Numerical Investigation ◽

Line Width ◽

Insertion Loss ◽

Return Loss ◽

Rf Mems ◽

Rf Mems Switch ◽

Ka Band ◽

Mems Switch ◽

Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

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