The humidity and thermal characteristics of die-attach (DA) and its impact on the package reliability

2008 ◽  
Author(s):  
Chen Ning ◽  
Xiao-song Ma ◽  
Jiang Haihua
Keyword(s):  
Thermal Characteristics ◽  
Die Attach ◽  
Package Reliability

Thermal Characteristics Analysis of Die Attach Layer Based on Time-Constant Spectrum for High-Power LED

2015 ◽  
Vol 62 (11) ◽  
pp. 3715-3721 ◽  
Author(s):  
Wei Lai ◽  
Xianming Liu ◽  
Weimin Chen ◽  
Xiaohua Lei ◽  
Xueying Cao
Keyword(s):  
Time Constant ◽  
High Power ◽  
Thermal Characteristics ◽  
Die Attach ◽  
High Power Led ◽  
Characteristics Analysis

Review of Thermal Packaging Technologies for Automotive Power Electronics for Traction Purposes

2018 ◽  
Vol 140 (4) ◽  
Author(s):  
Justin Broughton ◽  
Vanessa Smet ◽  
Rao R. Tummala ◽  
Yogendra K. Joshi
Keyword(s):  
Silicon Carbide ◽  
Hybrid Electric Vehicles ◽  
Thermal Characteristics ◽  
Thermal Interface Materials ◽  
Liquid Cooling ◽  
Area Of Interest ◽  
Die Attach ◽  
Power Modules ◽  
Silicon Device ◽  
Interface Materials

Due to its superior electrical and thermal characteristics, silicon carbide power modules will soon replace silicon modules to be mass-produced and implemented in all-electric and hybrid-electric vehicles (HEVs). Redesign of the power modules will be required to take full advantage of these newer devices. A particular area of interest is high-temperature power modules, as under-hood temperatures often exceed maximum silicon device temperatures. This review will examine thermal packaging options for standard Si power modules and various power modules in recent all-electric and HEVs. Then, thermal packaging options for die-attach, thermal interface materials (TIM), and liquid cooling are discussed for their feasibility in next-generation silicon carbide (SiC) power modules.

Package Reliability of the SiC Power Modules in Harsh Environments

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000139-000144
Author(s):  
Fengqun Lang ◽  
Hiroshi Yamaguchi ◽  
Hiroshi Sato
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Electrical Resistivity ◽  
Thermal Cycling ◽  
Isothermal Aging ◽  
Harsh Environments ◽  
Die Attach ◽  
Power Modules ◽  
Almost All ◽  
Package Reliability

To evaluate the package reliability of the SiC power modules in harsh environments, the SiC Schottky Barrier Diodes (SBDs) were die bonded to the Si3N4/Cu/Ni(P) substrate with Au-Ge eutectic solder using a vacuum reflow furnace. The Si3N4/Cu/Ni(P) substrates are active metalized copper (AMC). The bonded samples were isothermally aged at 330°C and tested under thermal cycling conditions in the temperature range of −40–300°C in air. During the isothermal aging, cracks of the Ni(P) layer developed, resulting in oxidation of the Cu power path. Decrease in the die bond strength and increase in the electrical resistivity were observed due to the Cu power path oxidation and the growth of the Ni-Ge intermetalic compound (IMC) in the joint. Under the thermal cycling conditions, the metallization of the substrate suffers from serious surface roughness, which greatly degrades the die-attach reliability. The Al electrode was found to seriously exfoliate from the SiC-SBDs due to the thermal stress. After 521 cycles, almost all the Al electrode exfoliated form the anode. Benefit from the excellent mechanical properties of Si3N4, no detachment of the Cu layer was observed from the Si3N4 substrate after 1079 cycles, while the Cu layer detached from the AlN substrate only after 12 cycles.

Package Reliability and Integrity Improvements for a Thermally Enhance Non-Conductive Die Attach Adhesive for ASIC Devices on Exposed Pad Packages

2019 ◽  
Vol 2019 (1) ◽  
pp. 000091-000094
Author(s):  
Alvin Denoyo ◽  
Darwin De Lazo ◽  
Ivan Costa ◽  
Allen Menor
Keyword(s):  
Integrated Circuit ◽  
Primary Objective ◽  
Surface Enhancement ◽  
Material Compatibility ◽  
Humid Environment ◽  
Die Attach ◽  
Ic Package ◽  
Package Reliability ◽  
Delamination Failure

Abstract Polymers being used in a plastic-encapsulated integrated circuit (IC) package exposed to a humid environment absorbed moisture and expand resulting to a so called delamination failure. Weak or imperfect adhesions between the interfaces of the mold compound and adhesive unto the leadframe surface are often the main sources of these failures. In response to automotive requirements and to ensure excellent package reliability and integrity, delamination in all interfaces should then be eliminated. Thus the primary objective of this work is to fulfill the no delamination criteria in all interfaces after moisture soak for an exposed pad package. To satisfy these requirements, activities includes leadframe design improvements, surface enhancement and bill-of-material changes. With the design improvements implemented, still the material compatibility plays an important role in achieving improved package reliability.

Stacked-Die Failure Mechanisms for an Octal, Current Input 20-Bit Analog-to-Digital Converter

2005 ◽  
Author(s):  
Bob K. Craigin ◽  
Bin Ling Zhou ◽  
Jason R. Bridgmon
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Ion Migration ◽  
Analog To Digital ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Die Attach ◽  
Current Input ◽  
Self Test ◽  
Package Reliability

Abstract Stacked-die packaging was used to make an octal 20-bit analog-to-digital (A/D) converter by stacking two quad A/D converter die in a single 48-lead QFN (quad flat-pack, no leads) package. Reliability testing for product qualification initially failed only (biased) HAST test. Two failure mechanisms were identified. The first mechanism was silver ion migration at sensitive analog inputs due to high conductive die-attach fillets on the bottom die. The second mechanism was ILD delamination and passivation layer cracking due to spacer-attach stress on the surface of the bottom die. Electrical failure analysis was aided by a self test mode designed into the quad A/D converter. Package opening and other standard failure analysis techniques required some modification to accommodate the stacked-die package. This work points to critical stacked-die assembly steps, including conductive die-attach and nonconductive spacer-attach application, where effects of moisture, bias, and thermal stress must all be considered.

scholarly journals Package Reliability Performance Study of QFN Device on Different Die Attach Machines

2020 ◽  
pp. 41-43
Author(s):  
Edwin Graycochea Jr. ◽  
Rennier Rodriguez ◽  
Frederick Ray Gomez ◽  
Bryan Christian Bacquian
Keyword(s):  
Thermal Cycling ◽  
Thermal Cycle ◽  
Performance Study ◽  
Die Attach ◽  
Significant Difference ◽  
Quality And Reliability ◽  
The Difference ◽  
Reliability Performance ◽  
Two Machines ◽  
Package Reliability

The paper is focused on the reliability performance of quad-flat no-leads (QFN) package evaluated on different die attach machine platforms. Reliability tests were done to check the difference in the quality and reliability performance of the device that undergone die attach process on two different machines. Thermal cycling resulted in significant difference on the two machines, with the device processed in Machine 1 showing reliability failures while on Machine 2 it passed the 1000 thermal cycle. For future works, Machine 2 could be used for devices with critical package reliability requirement.

Power cycle tests of high temperature Ag sinter die-attach on metalized ceramic substrate by using micro-heater SiC chip

2018 ◽  
Vol 2018 (1) ◽  
pp. 000084-000087
Author(s):  
Dongjin Kim ◽  
Shijo Nagao ◽  
Naoki Wakasugi ◽  
Yasuyuki Yamamoto ◽  
Aiji Suetake ◽  
...  
Keyword(s):  
Cooling System ◽  
High Reliability ◽  
Thermal Characteristics ◽  
Ceramic Substrate ◽  
Power Devices ◽  
Cycle Number ◽  
Power Semiconductors ◽  
Power Cycle ◽  
Die Attach ◽  
Power Cycling

Abstract Next generation power semiconductors, e.g. SiC and GaN, are emerging for the further minimization and high current/voltage of power devices with high reliability covering wider operating environments than those based on Si. To implement high reliability operation, the key technology is the control of the temperature distribution in the module, and thermal stress caused by the heat generated by power loss. In the present study, we have developed SiC micro-heater chip with temperature probe to evaluate thermal characteristics of an assembled system of Ag sinter die-attach on metalized ceramic substrate (Cu/Si3N4/Cu) during the repetitive power cycling. The test specimens were fixed on a water cooling system, and steady-state heat resistance of the system was measured during the power cycling. For comparison, Pb-Sn, Sn-Cu-Ni-P, Sn-Ag-Sb-Cu solders were used as die-attach material bonded on the same metalized ceramic substrates. The maximum applied power exceeds 200 W with cycles of 2 seconds of heating and 5 seconds of cooling, and the test cycles was over 5000 cycles. The power cycle number dependence on the temperature swing and thermal resistance characteristics would be discussed, in connected with the power cycle testing for real power devices.

scholarly journals Die Attach Process Optimization with Enhanced Epoxy Control on Leadframe Package

2020 ◽  
pp. 32-37
Author(s):  
Rennier S. Rodriguez ◽  
Edwin M. Graycochea Jr ◽  
Rammil A. Seguido ◽  
Frederick Ray I. Gomez
Keyword(s):  
Shear Strength ◽  
Thermal Cycling ◽  
Process Optimization ◽  
Shear Test ◽  
Relative Impact ◽  
Adhesive Material ◽  
Practical Procedure ◽  
Die Attach ◽  
Package Reliability

The paper presents a practical procedure in selecting the best candidate for die attach epoxy control or anti-epoxy bleed-out (anti-EBO) concentration during the introduction of new leadframe configuration. Three different criteria were implemented to measure the relative impact of the anti-EBO into the different interfaces inside a quad-flat no-leads multi-row (QFN-mr) leadframe unit. Die shear test is performed to measure the shear strength and the compatibility of the anti-EBO to the adhesive material. EBO measurement is performed herewith to study the propagation of epoxy bleed-out on the surface of the leadframe with reference to the different level of anti-EBO concentration. Package reliability is employed study the response of different interfaces directly in-contact with anti-EBO through thermal-cycling scenario. Ultimately, understanding the effect of anti-EBO into different set of tests provided a systematic way of selecting appropriate leadframe parameters for QFN-mr leadframe product.

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