Failure Analysis on Packaging Materials Fault for Plastic package IC

Author(s):  
Zhe Sun ◽  
Weiguan Huang ◽  
Zhenfeng Xie
2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.


Author(s):  
Hei-Ruey Harry Jen ◽  
Gerald S. D’Urso ◽  
Harold Andrews

Abstract When a failure analysis (FA) involves a multiple layer structure separated by a polymeric material such as Benzocyclobutene (BCB), in a plastic package, it becomes a very challenging task to find out where the failure site is and how it failed. This is due to the fact that the chemical de-processing procedure removes BCB as well as the plastic molding compound. This paper outlines the studies carried out to determine the failure site and the root cause of the failure mechanism in a multilayer circuit and the steps taken to fix the problems. The methodology and results of this study are applicable to many other types of circuits.


Author(s):  
Amandine Aubert ◽  
Lionel Dantas de Morais ◽  
Stéphanie Pétremont ◽  
Nathalie Labat ◽  
Hélène Frémont

Abstract This paper presents a new sample preparation process for front side access for die with organic dielectric layers that are encapsulated in plastic packages. The limitation of the standard failure analysis flow is firstly described, showing the damage caused by wet etching. Then, the decapsulation method combining laser ablation and plasma etching is presented. It is completed by the process optimization. The final process makes it possible to perform failure analysis on low-k/Cu technologies in plastic package either by the front side or by the backside of the die.


Author(s):  
John R. Devaney

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.


Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.


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