Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

2017 ◽  
Author(s):  
S. Nakazawa ◽  
H.-A. Shih ◽  
N. Tsurumi ◽  
Y. Anda ◽  
T. Hatsuda ◽  
...  
Keyword(s):  
Gate Insulator ◽  
Switching Performance ◽  
Fast Switching

CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

2015 ◽  
Vol 821-823 ◽  
pp. 765-768 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Jennifer Duc ◽  
Brett Hull ◽  
Jonathan Young ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Oxide Interface ◽  
Inductive Load ◽  
Switching Performance ◽  
Fast Switching ◽  
Drain Bias ◽  
C 30 ◽  
P Type ◽  
Drift Layer

A new MOSFET structure named the CIMOSFET (Central Implant MOSFET) has been presented and experimentally confirmed on SiC. The novelty of the CIMOSFET lies in a p-type implant introduced in the middle of the JFET area to shield the oxide interface field from the drain bias. Compared to the commercially available 1200 V SiC DMOSFET, this new concept has significantly reduced the on-resistance (Ron) and gate-drain capacitance (Cgd) simultaneously, produced a record low Ron·Qgd Figure of Merit of 455 mΩ·nC at 25°C, and 700 mΩ·nC at 150°C (~30% of the best data found). Only a 55% increase in Ron from 25°C to 150°C has been achieved due to the highly doped drift layer used on the CIMOSFET. Inductive load switching measurements have shown the CIMOSFET exhibits a fast switching performance. The CIMOSFET blocks 1600 V even though its drift doping is higher than that of the conventional DMOSFETs.

scholarly journals Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics

Energies ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3802 ◽  
Author(s):  
Maosheng Zhang ◽  
Na Ren ◽  
Qing Guo ◽  
Kuang Sheng
Keyword(s):  
High Power ◽  
Power Module ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Power Modules ◽  
Voltage Plateau ◽  
Source Voltage ◽  
Bus Voltage

The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

2008 ◽  
Vol 600-603 ◽  
pp. 1067-1070 ◽  
Author(s):  
Rajesh Kumar Malhan ◽  
S.J. Rashid ◽  
Mitsuhiro Kataoka ◽  
Yuuichi Takeuchi ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Switching Losses ◽  
Dual Gate ◽  
Layer Resistance ◽  
Heavily Doped ◽  
Effect Transistor ◽  
P Type ◽  
State Resistance

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

Oil Stiction in Fast Switching Annular Seat Valves for Digital Displacement Fluid Power Machines

2014 ◽  
Author(s):  
Daniel B. Roemer ◽  
Per Johansen ◽  
Henrik C. Pedersen ◽  
Torben O. Andersen
Keyword(s):  
Reynolds Equation ◽  
Dynamic Behaviour ◽  
High Efficiency ◽  
Low Pressure ◽  
Fluid Power ◽  
Switching Performance ◽  
Fast Switching ◽  
High Bandwidth ◽  
Variable Displacement ◽  
Valve Opening

Digital Displacement (DD) fluid power machines utilizes electronically controlled seat valves connected to pressure chambers to obtain variable displacement with high operational efficiency and high bandwidth. To achieve high efficiency, fast valve switching is essential and all aspects related to the dynamic behaviour of the seat valves must be considered to optimize the machine efficiency. A significant effect influencing the valves switching performance is the presence of oil stiction when separating the contact surfaces in valve opening movement. This oil stiction force is limited by cavitation for low pressure levels, e.g. valves connected to the low pressure manifold, however for valves operated at higher pressure levels, the oil stiction force is dominating when the separating surfaces are close to contact. This paper presents an analytic solution to the oil stiction force for annular seat valves suitable for DD applications based on the Reynolds equation and considers contact surface curvature and attack angle. A dynamic cavitation zone is included in the stiction model, and cavitation is found to be present even for seat valves surrounded by high pressure levels.

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element

2017 ◽  
Vol 897 ◽  
pp. 689-692
Author(s):  
Stefan Matlok ◽  
Tobias Erlbacher ◽  
Florian Krach ◽  
Bernd Eckardt
Keyword(s):  
Development Effort ◽  
Power Losses ◽  
Power Module ◽  
Large Power ◽  
Chip Area ◽  
Switching Performance ◽  
Fast Switching ◽  
Power Modules ◽  
Power Switches ◽  
Recent Developments

Large power modules include several parallel mounted chips per switch to raise active area and current. By the electro-mechanical connection interface, the resulting large parasitic inductance is a huge problem especially for very fast switching SiC devices. This challenge is handled by many approaches, but these recent developments require additional development effort along all aspects of the power module, e.g. smart DBC layout, low inductive top side metallization, special terminal designs or additional pins. In this paper we demonstrate an approach to enable excellent switching performance with con-ventional power module technologies: By using a recently developed monolithic silicon RC (Si-RC) element to decouple the bus bar, this problem can be solved in a very efficient way. The Si-RC element is assembled directly adjacent to the power switches on the DBC. This allows a significant reduction of the SiC chip area by minimizing the power losses caused by the switching transients from the parasitic DC-link and module inductances.

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET

2013 ◽  
Vol 740-742 ◽  
pp. 946-949
Author(s):  
Jacek Rabkowski ◽  
Dimosthenis Peftitsis ◽  
Mietek Bakowski ◽  
Hans Peter Nee
Keyword(s):  
Dynamic Performance ◽  
Current Source ◽  
Internal Resistance ◽  
Double Gate ◽  
Switching Performance ◽  
Fast Switching ◽  
Dual Gate ◽  
Speed Up ◽  
Gate Driver ◽  
Drive Circuit

The paper discusses the switching performance of the double-gate SiC trench JFET. In applications such as dc/dc converters, when fast switching is expected the standard totem-pole driver is not sufficient. The reason for this is that both the internal resistance and the parasitic capacitances of this device are significantly higher than for other designs. Instead, the gate driver with a dynamic current source is proposed in this paper to speed-up the switching process. Performed double-pulse measurements show improved dynamic performance of the tested DGTJFET with the new driver.

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p+ Regions

2017 ◽  
Vol 897 ◽  
pp. 505-508 ◽  
Author(s):  
Yu Saitoh ◽  
Takeyoshi Masuda ◽  
Hideto Tamaso ◽  
Hiroshi Notsu ◽  
Hisato Michikoshi ◽  
...  
Keyword(s):  
Static Characteristics ◽  
Switching Loss ◽  
Switching Performance ◽  
Fast Switching ◽  
Effective Reduction

We developed V-groove trench gate SiC MOSFETs with grounded buried p+ regions. An effective reduction can be seen in the feedback capacitance (Crss) of static characteristics, and a fast switching performance was achieved. The grounded buried p+ regions were found to be an effective structure for reducing a switching loss.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

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