CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

2015 ◽  
Vol 821-823 ◽  
pp. 765-768 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Jennifer Duc ◽  
Brett Hull ◽  
Jonathan Young ◽  
Sei Hyung Ryu ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Oxide Interface ◽  
Inductive Load ◽  
Switching Performance ◽  
Fast Switching ◽  
Drain Bias ◽  
C 30 ◽  
P Type ◽  
Drift Layer

A new MOSFET structure named the CIMOSFET (Central Implant MOSFET) has been presented and experimentally confirmed on SiC. The novelty of the CIMOSFET lies in a p-type implant introduced in the middle of the JFET area to shield the oxide interface field from the drain bias. Compared to the commercially available 1200 V SiC DMOSFET, this new concept has significantly reduced the on-resistance (Ron) and gate-drain capacitance (Cgd) simultaneously, produced a record low Ron·Qgd Figure of Merit of 455 mΩ·nC at 25°C, and 700 mΩ·nC at 150°C (~30% of the best data found). Only a 55% increase in Ron from 25°C to 150°C has been achieved due to the highly doped drift layer used on the CIMOSFET. Inductive load switching measurements have shown the CIMOSFET exhibits a fast switching performance. The CIMOSFET blocks 1600 V even though its drift doping is higher than that of the conventional DMOSFETs.

Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET

2008 ◽  
Vol 600-603 ◽  
pp. 1067-1070 ◽  
Author(s):  
Rajesh Kumar Malhan ◽  
S.J. Rashid ◽  
Mitsuhiro Kataoka ◽  
Yuuichi Takeuchi ◽  
Naohiro Sugiyama ◽  
...  
Keyword(s):  
Switching Performance ◽  
Fast Switching ◽  
Turn On ◽  
Switching Losses ◽  
Dual Gate ◽  
Layer Resistance ◽  
Heavily Doped ◽  
Effect Transistor ◽  
P Type ◽  
State Resistance

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6 – 10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5 – 1.8kV was realized at VGS = −5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

scholarly journals Thermoelectric Properties of Carbon Nanotubes

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4561 ◽  
Author(s):  
Nguyen T. Hung ◽  
Ahmad R. T. Nugraha ◽  
Riichiro Saito
Keyword(s):  
Carbon Nanotubes ◽  
Figure Of Merit ◽  
Waste Heat ◽  
Quantum Confinement Effect ◽  
Electrical Energy ◽  
High Seebeck Coefficient ◽  
Te Material ◽  
P Type ◽  
State Device ◽  
Solid State Device

Thermoelectric (TE) material is a class of materials that can convert heat to electrical energy directly in a solid-state-device without any moving parts and that is environmentally friendly. The study and development of TE materials have grown quickly in the past decade. However, their development goes slowly by the lack of cheap TE materials with high Seebeck coefficient and good electrical conductivity. Carbon nanotubes (CNTs) are particularly attractive as TE materials because of at least three reasons: (1) CNTs possess various band gaps depending on their structure, (2) CNTs represent unique one-dimensional carbon materials which naturally satisfies the conditions of quantum confinement effect to enhance the TE efficiency and (3) CNTs provide us with a platform for developing lightweight and flexible TE devices due to their mechanical properties. The TE power factor is reported to reach 700–1000 W / m K 2 for both p-type and n-type CNTs when purified to contain only doped semiconducting CNT species. Therefore, CNTs are promising for a variety of TE applications in which the heat source is unlimited, such as waste heat or solar heat although their figure of merit Z T is still modest (0.05 at 300 K). In this paper, we review in detail from the basic concept of TE field to the fundamental TE properties of CNTs, as well as their applications. Furthermore, the strategies are discussed to improve the TE properties of CNTs. Finally, we give our perspectives on the tremendous potential of CNTs-based TE materials and composites.

scholarly journals Mechanosynthesis and Thermoelectric Properties of Fe, Zn, and Cd-Doped P-Type Tetrahedrite: Cu12-xMxSb4S13

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3448
Author(s):  
Francisco Arturo López Cota ◽  
José Alonso Díaz-Guillén ◽  
Oscar Juan Dura ◽  
Marco Antonio López de la Torre ◽  
Joelis Rodríguez-Hernández ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Powder Processing ◽  
High Energy ◽  
Secondary Phases ◽  
Ambient Conditions ◽  
Cadmium Sulfate ◽  
Electrical Conductivities ◽  
Compositional Changes ◽  
P Type

This contribution deals with the mechanochemical synthesis, characterization, and thermoelectric properties of tetrahedrite-based materials, Cu12-xMxSb4S13 (M = Fe2+, Zn2+, Cd2+; x = 0, 1.5, 2). High-energy mechanical milling allows obtaining pristine and substituted tetrahedrites, after short milling under ambient conditions, of stoichiometric mixtures of the corresponding commercially available binary sulfides, i.e., Cu2S, CuS, Sb2S3, and MS (M = Fe2+, Zn2+, Cd2+). All the target materials but those containing Cd were obtained as single-phase products; some admixture of a hydrated cadmium sulfate was also identified by XRD as a by-product when synthesizing Cu10Cd2Sb4S13. The as-obtained products were thermally stable when firing in argon up to a temperature of 350–400 °C. Overall, the substitution of Cu(II) by Fe(II), Zn(II), or Cd(II) reduces tetrahedrites’ thermal and electrical conductivities but increases the Seebeck coefficient. Unfortunately, the values of the thermoelectric figure of merit obtained in this study are in general lower than those found in the literature for similar samples obtained by other powder processing methods; slight compositional changes, undetected secondary phases, and/or deficient sintering might account for some of these discrepancies.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

OXYCHALCOGENIDES AS NEW EFFICIENT p-TYPE THERMOELECTRIC MATERIALS

2013 ◽  
Vol 06 (05) ◽  
pp. 1340007 ◽  
Author(s):  
CELINE BARRETEAU ◽  
LIN PAN ◽  
YAN-LING PEI ◽  
LI-DONG ZHAO ◽  
DAVID BERARDAN ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Parent Compound ◽  
Thermoelectric Figure ◽  
Medium Temperature ◽  
Temperature Range ◽  
The Past ◽  
Thermoelectric Conversion ◽  
New Directions ◽  
Wide Scale ◽  
P Type

During the past two years, we have underlined the great potential of p-type oxychalcogenides, with parent compound BiCuSeO , for thermoelectric applications in the medium temperature range (400–650°C). These materials, which do not contain lead and are less expensive than Te containing materials, exhibit large thermoelectric figure of merit, exceeding 1 in a wide temperature range, mainly due to an intrinsically very low thermal conductivity. This paper summarizes the main chemical and crystallographic features of this system, as well as the thermoelectric properties. It also gives new directions to improve these properties, and discuss the potential of these materials for wide scale applications in thermoelectric conversion system in the medium temperature range.

High-Thermoelectric Figure of Merit Realized in p-Type Half-Heusler Compounds: ZrCoSnxSb1-x

2007 ◽  
Vol 46 (No. 27) ◽  
pp. L673-L675 ◽  
Author(s):  
Takeyuki Sekimoto ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Heusler Compounds ◽  
Thermoelectric Figure ◽  
P Type

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

2005 ◽  
Vol 297-300 ◽  
pp. 875-880
Author(s):  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Yong Hwan Kim ◽  
Dong Choul Cho ◽  
Young Sup Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystals ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Mixing Ratio ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

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