On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

2008 ◽  
Vol 29 (2) ◽  
pp. 177-179 ◽  
Author(s):  
Bogdan Govoreanu ◽  
Jan Van Houdt
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Flash Memory ◽  
Reliability Assessment ◽  
Memory Retention

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

scholarly journals High-Temperature Deformation of Naturally Aged 7010 Aluminum Alloy

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 581
Author(s):  
Abdulhakim A. Almajid
Keyword(s):  
Activation Energy ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Threshold Stress ◽  
Activation Energies ◽  
Temperature Deformation ◽  
High Temperature Range ◽  
Temperature Range ◽  
True Activation Energy ◽  
Two Temperatures

This study is focused on the deformation mechanism and behavior of naturally aged 7010 aluminum alloy at elevated temperatures. The specimens were naturally aged for 60 days to reach a saturated hardness state. High-temperature tensile tests for the naturally aged sample were conducted at different temperatures of 573, 623, 673, and 723 K at various strain rates ranging from 5 × 10−5 to 10−2 s−1. The dependency of stress on the strain rate showed a stress exponent, n, of ~6.5 for the low two temperatures and ~4.5 for the high two temperatures. The apparent activation energies of 290 and 165 kJ/mol are observed at the low, and high-temperature range, respectively. These values of activation energies are greater than those of solute/solvent self-diffusion. The stress exponents, n, and activation energy observed are rather high and this indicates the presence of threshold stress. This behavior occurred as a result of the dislocation interaction with the second phase particles that are existed in the alloy at the testing temperatures. The threshold stress decreases in an exponential manner as temperature increases. The true activation energy was computed by incorporating the threshold stress in the power-law relation between the stress and the strain. The magnitude of the true activation energy, Qt dropped to 234 and 102 kJ/mol at the low and high-temperature range, respectively. These values are close to that of diffusion of Zinc in Aluminum and diffusion of Magnesium in Aluminum, respectively. The Zener–Hollomon parameter for the alloy was developed as a function of effective stress. The data in each region (low and high-temperature region) coalescence in a segment line in each region.

The activation energy U(T,B) in high temperature superconductor

2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Phase Diagram ◽  
High Temperature ◽  
Apparent Activation Energy ◽  
High Temperature Superconductor ◽  
Flux Flow ◽  
Resistivity Measurements ◽  
Vortex Phase ◽  
The Magnetic Field

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.

DOM Products: Activation Energy Estimation and Reliability Assessment

2013 ◽  
Vol 470 ◽  
pp. 781-784 ◽  
Author(s):  
Chien Yi Huang ◽  
Yueh Hsun Lin ◽  
Eric Huang
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Subjective Experience ◽  
Reliability Assessment ◽  
Life Time ◽  
Service Condition ◽  
Energy Estimation ◽  
Failure Data ◽  
Scientific Approach ◽  
Temperature Scenario

A scientific approach is proposed in this research to investigate a disk on module (DOM) product's activation energy based on experimental data that eliminates subjective experience. This study considers multiple temperature conditions to enhance the accuracy of activation energy estimation. In order to ensure the consistency of failure mode in each temperature scenario, the slopes of Weibul probability plots obtained from the failure data are calculated followed by an examination for parallelism. The estimated life time under normal service condition differs from the results obtained using the industrial standard given activation energy by approximately 42%.

Transformation probability of graphite-diamond assisted by nonmetallic catalysts at high pressure and high temperature

1999 ◽  
Vol 14 (3) ◽  
pp. 631-633 ◽  
Author(s):  
Liling Sun ◽  
Qi Wu ◽  
Yafei Zhang ◽  
Wenkui Wang
Keyword(s):  
Activation Energy ◽  
High Pressure ◽  
High Temperature ◽  
Potential Barrier ◽  
Highly Sensitive

The tendency of graphite-diamond transformation assisted by nonmetallic catalysts of carbonates, sulfates, or phosphorus under high pressure and high temperature has been investigated by calculating the activation energy and transformation probability of the carbon atoms over a potential barrier. It was found that the activation energy is highly sensitive to the catalyst chosen. The value of activation energy in the systems of graphite-carbonates, graphite-phosphorus, and graphite-sulfate are 130.71 × 103, 206.03 × 103, and 221 × 103 J/mol, respectively. If fd stands for the probability of the transformation from graphite to diamond, the probability sequence of graphite-diamond transformation in different systems was put forward: fd(gr.-carbonate) > fd(gr.-phosphorus). fd(gr.-sulfate).

Activation Energy and High Temperature Oxidation Behavior of Multi-Principal Element Alloy

2017 ◽  
Vol 19 (11) ◽  
pp. 1700182 ◽  
Author(s):  
Harpreet Singh Grewal ◽  
Ramachandran Murali Sanjiv ◽  
Harpreet Singh Arora ◽  
Ram Kumar ◽  
Aditya Ayyagari ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperature Oxidation ◽  
Oxidation Behavior ◽  
Principal Element ◽  
Temperature Oxidation ◽  
High Temperature Oxidation Behavior

New insights into the mechanism of NH3-SCR over Cu- and Fe-zeolite catalyst: Apparent negative activation energy at high temperature and catalyst unit design consequences

2018 ◽  
Vol 226 ◽  
pp. 565-574 ◽  
Author(s):  
Saurabh Y. Joshi ◽  
Ashok Kumar ◽  
Jinyong Luo ◽  
Krishna Kamasamudram ◽  
Neal W. Currier ◽  
...  
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
Zeolite Catalyst ◽  
Nh3 Scr ◽  
Unit Design

A 256 kbit (32kx8) EEPROM for >200°C Applications

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000136-000141
Author(s):  
Dennis Adams ◽  
Jeff Black ◽  
Garry Cunningham ◽  
Randall Lewis ◽  
Jason O'Brien ◽  
...  
Keyword(s):  
High Temperature ◽  
Memory Retention ◽  
Life Testing ◽  
Device Reliability ◽  
Extended Life ◽  
Retention Study ◽  
Temperature Applications

A memory retention study was performed on the W28C256 256k (32kx8) EEPROM device to assess its suitability for use in high temperature applications above 200°C. This study indicates this device has memory retention in excess of 5 years at 225°C. During 2014, characterization and extended life testing is planned to further assess device reliability for future high temperature applications.

INFLUENCE OF THE CROSSLINK STRUCTURE ON THE ACTIVATION ENERGY CALCULATED UNDER THERMO-OXIDATIVE CONDITIONS

2018 ◽  
Vol 91 (1) ◽  
pp. 205-224 ◽  
Author(s):  
Richard J. Pazur ◽  
T. Mengistu
Keyword(s):  
Activation Energy ◽  
Zinc Oxide ◽  
High Temperature ◽  
Oxidation Process ◽  
Activation Energies ◽  
Structure Stability ◽  
Temperature Oxidation ◽  
Network Chain ◽  
Temperature Activation ◽  
Sulfur Donor

ABSTRACT A series of six carbon black reinforced brominated poly(isobutylene-co-isoprene) (BIIR) compounds has been developed varying only in cure system type: sulfur, sulfur donor, zinc oxide, peroxide, phenolic resin, and ionic. Compounds were aged from room temperature up to 115 °C, and hardness, mechanical properties, and network chain density were measured. Non-Arrhenius behavior was observed due to data curvature from 70 to 85 °C. The oxidation process was adequately described by assigning low (23–85 °C) and high (85–115 °C) temperature regimes. Heterogeneous aging due to diffusion limited oxygen (DLO) occurred for heat aging above 85 °C, and all measured responses except tensile strength were strongly affected, causing lower activation energies. The activation energy for the high temperature oxidation process is in the range of 107 to 133 kJ/mol in the following ascending order: zinc oxide, ionic, sulfur donor, sulfur, peroxide, and resin. The midpoint of the high temperature activation energies is of the same order as the BIIR and poly(isobutylene) elastomers. The low temperature activation energy is in the range of 55–60 kJ/mol and is likely due to a combination of oxidative chain scission (crosslink density loss) and crosslinking recombination (network building) reactions. Apart from the crosslink structure stability, the presence of unsaturation along the polymer chain after vulcanization affects the high temperature activation energy.

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