Progress of diamond substrate development

2021 ◽  
Author(s):  
Hong-Xing Wang
Keyword(s):  
Diamond Substrate

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

2021 ◽  
Author(s):  
Mahmoud Abou Daher ◽  
Marie Lesecq ◽  
Nicolas Defrance ◽  
Etienne Okada ◽  
Bertrand Boudart ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Aluminum Nitride ◽  
Nitride Layer ◽  
Diamond Substrate ◽  
Gan Hemts

Series Interconnection of Six TRAPATT Devices on a Diamond Substrate

2005 ◽  
Author(s):  
N.W. Cox ◽  
G.N. Hill ◽  
J.W. Amoss ◽  
C.T. Rucker
Keyword(s):  
Diamond Substrate

scholarly journals Surface Morphology and Microstructure Evolution of Single Crystal Diamond during Different Homoepitaxial Growth Stages

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5964
Author(s):  
Guoqing Shao ◽  
Juan Wang ◽  
Shumiao Zhang ◽  
Yanfeng Wang ◽  
Wei Wang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Single Crystal ◽  
Cross Section ◽  
Growth Model ◽  
Diamond Growth ◽  
Step Flow ◽  
Homoepitaxial Growth ◽  
Diamond Substrate ◽  
Single Crystal Diamond ◽  
Step Flow Growth

Homoepitaxial growth of step-flow single crystal diamond was performed by microwave plasma chemical vapor deposition system on high-pressure high-temperature diamond substrate. A coarse surface morphology with isolated particles was firstly deposited on diamond substrate as an interlayer under hillock growth model. Then, the growth model was changed to step-flow growth model for growing step-flow single crystal diamond layer on this hillock interlayer. Furthermore, the surface morphology evolution, cross-section and surface microstructure, and crystal quality of grown diamond were evaluated by scanning electron microscopy, high-resolution transmission electron microcopy, and Raman and photoluminescence spectroscopy. It was found that the surface morphology varied with deposition time under step-flow growth parameters. The cross-section topography exhibited obvious inhomogeneity in crystal structure. Additionally, the diamond growth mechanism from the microscopic point of view was revealed to illustrate the morphological and structural evolution.

Analysis of propagation characteristics of Rayleigh surface acoustic waves on Yb0.33Al0.67N piezoelectric films/high-velocity substrates

2022 ◽  
Author(s):  
Masashi Suzuki ◽  
Shoji Kakio
Keyword(s):  
High Velocity ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Film Surface ◽  
Layered Structures ◽  
Coupling Factor ◽  
Propagation Characteristics ◽  
Effective Coupling ◽  
Diamond Substrate ◽  
Coupling Factors

Abstract Piezoelectricity of YbAlN films has recently been shown to be almost as high as that of ScAlN films. YbAlN film surface acoustic wave (SAW) resonators are expected to have a high coupling factor. We theoretically investigated the propagation characteristics of first-mode Rayleigh SAWs (RSAWs) on Yb0.33Al0.67N film/high-velocity Si, sapphire, AlN, SiC, BN, and diamond substrates. The first-mode RSAWs on the YbAlN layered structures had high coupling factors, higher than those on ScAlN layered structures. An enhancement of the effective coupling factor of the first mode RSAWs was observed in polarity inverted YbAlN film/BN or diamond substrate structures.

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