Positive feedback technique for DC-gain enhancement of folded cascode Op-Amps

Author(s):  
Sina Farahmand ◽  
Hossein Shamsi
2017 ◽  
Vol 11 (6) ◽  
pp. 605-612 ◽  
Author(s):  
Seyed Mahmoud Anisheh ◽  
Hossein Shamsi ◽  
Mitra Mirhassani

Author(s):  
Priti Gupta ◽  
Sanjay Kumar Jana

This paper deals with the designing of low-power transconductance–capacitance-based loop filter. The folded cascode-based operational transconductance amplifier (OTA) is designed in this paper with the help of quasi-floating bulk MOSFET that achieved the DC gain of 88.61[Formula: see text]dB, unity gain frequency of 97.86[Formula: see text]MHz and power consumption of 430.62[Formula: see text][Formula: see text]W. The proposed OTA is compared with the exiting OTA structure which showed 19.50% increase in DC gain and 15.11% reduction in power consumption. Further, the proposed OTA is used for the designing of transconductance–capacitance-based loop filter that has been operated at [Formula: see text]3[Formula: see text]dB cut-off frequency of 30.12[Formula: see text]MHz with the power consumption of 860.90[Formula: see text][Formula: see text]W at the supply voltage of [Formula: see text][Formula: see text]V. The transistor-level simulation has been done in 0.18[Formula: see text][Formula: see text]m CMOS process.


2020 ◽  
Vol 37 (4) ◽  
pp. 205-213
Author(s):  
Norhamizah Idros ◽  
Zulfiqar Ali Abdul Aziz ◽  
Jagadheswaran Rajendran

Purpose The purpose of this paper is to demonstrate the acceptable performance by using the limited input range towards lower open-loop DC gain operational amplifier (op-amp) of an 8-bit pipelined analog-to-digital converter (ADC) for mobile communication application. Design/methodology/approach An op-amp with folded cascode configuration is designed to provide the maximum open-loop DC gain without any gain-boosting technique. The impact of low open-loop DC gain is observed and analysed through the results of pre-, post-layout simulations and measurement of the ADC. The fabrication process technology used is Silterra 0.18-µm CMOS process. The silicon area by the ADC is 1.08 mm2. Findings Measured results show the differential non-linearity (DNL) error, integral non-linearity (INL) error, signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR) are within −0.2 to +0.2 LSB, −0.55 LSB for 0.4 Vpp input range, 22 and 27 dB, respectively, with 2 MHz input signal at the rate of 64 MS/s. The static power consumption is 40 mW with a supply voltage of 1.8 V. Originality/value The experimental results of ADC showed that by limiting the input range to ±0.2 V, this ADC is able to give a good reasonable performance. Open-loop DC gain of op-amp plays a critical role in ADC performance. Low open-loop DC gain results in stage-gain error of residue amplifier and, thus, leads to nonlinearity of output code. Nevertheless, lowering the input range enhances the linearity to ±0.2 LSB.


2020 ◽  
Vol 29 (14) ◽  
pp. 2050220
Author(s):  
Rajasekhar Nagulapalli ◽  
Khaled Hayatleh ◽  
Steve Barker

A power-efficient, voltage gain enhancement technique for op-amps has been described. The proposed technique is robust against Process, Voltage and Temperature (PVT) variations. It exploits a positive feedback-based gain enhancement technique without any latch-up issue, as opposed to the previously proposed conductance cancellation techniques. In the proposed technique, four additional transconductance-stages (gm stages) are used to boost the gain of the main gm stage. The additional gm stages do not significantly increase the power dissipation. A prototype was designed in 65[Formula: see text]nm CMOS technology. It results in 81[Formula: see text]dB voltage gain, which is 21[Formula: see text]dB higher than the existing gain-boosting technique. The proposed op-amp works with as low a power supply as 0.8[Formula: see text]V, without compromising the performance, whereas the traditional gain-enhancement techniques start losing gain below a 1.1[Formula: see text]V supply. The circuit draws a total static current of 295[Formula: see text][Formula: see text]A and occupies 5000[Formula: see text][Formula: see text]m2 of silicon area.


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