Electrical characterization of the plasma jet generated by plasma pencil

2010 ◽  
Author(s):  
Asma Begum ◽  
Mounir Laroussi
Keyword(s):  
Electrical Characterization ◽  
Plasma Jet ◽  
Plasma Pencil

Electrical characterization of argon and nitrogen based cold plasma jet

2018 ◽  
Vol 83 (2) ◽  
pp. 20801 ◽  
Author(s):  
G. Divya Deepak ◽  
Narendra Kumar Joshi ◽  
Ram Prakash ◽  
Udit Pal
Keyword(s):  
Gas Flow ◽  
Average Power ◽  
Electrical Characterization ◽  
Plasma Jet ◽  
Current Transformer ◽  
Ring Electrode ◽  
Electrode Configuration ◽  
Fixed Rate ◽  
Jet Length

In this paper, a dielectric barrier discharge plasma based atmospheric pressure plasma jet has been generated in a floating helix and floating end ring electrode configuration using mixture of argon and nitrogen gases (50:50 ratio). This configuration is subjected to a range of supply frequencies (10–25 kHz) and supply voltages (6.5–9.5 kV) at a fixed rate of gas flow rate (i.e., 1 l/min). The electrical characterization of the plasma jet has been carried out using a high voltage probe and current transformer. The current–voltage characteristics have been analyzed, and the power consumed by the device has been estimated at different applied combinations of supply frequency and voltages for optimum power consumption and maximum jet length. A comparative analysis of the results of the above experiments has shown that maximum power consumed by the device in helix electrode configuration with end ring is 19 W for (Ar+N2) mixture as compared to only 12 mW and 7.7 mW for Ar and He gas respectively (With end ring), this may be due to the main ionization mechanisms which are different depending on the working gas. Furthermore, maximum jet length of 42 mm has been obtained for He gas at 6 kV/25 kHz due to penning ionization process in comparison to jet lengths of only 32 mm for Ar gas and jet length of only 26 mm for Ar+N2 mixture. The obtained average power consumed and maximum jet length for mixture of (Ar+N2) gases are 6.5 W and 26 mm.

scholarly journals Electrical Characterization of an Atmospheric Pressure Plasma Jet

2019 ◽  
Vol 5 (1) ◽  
pp. 85-90
Author(s):  
S. K. KC ◽  
S. Sharma ◽  
R. Shrestha ◽  
D. P. Subedi
Keyword(s):  
Power Consumption ◽  
Capillary Tube ◽  
Electrical Characterization ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Voltage Divider ◽  
External Diameter ◽  
Electrical Characteristics ◽  
Lissajous Figures

In this work, a plasma jet has been generated with capillary tube having external diameter 4.0 mm and thickness 1.0 mm. Argon has been used as a working gas. The electrical characteristics of this device like instantaneous power, and discharge current have been measured. The effects of applied voltage on the dissipated power of the device have been investigated. The current is measured with the current probe whereas the voltage is measured from the locally fabricated voltage divider having ratio 1201:1. The electron density has been found out using power balance method. In addition, the power consumption during the discharge has also been studied with the help of Lissajous Figures. The calculated power consumption has been compared with other manual as well as I-V plots.

scholarly journals Electrical characterization of atmospheric pressure dielectric barrier discharge-based cold plasma jet using ring electrode configuration

2016 ◽  
Vol 34 (4) ◽  
pp. 615-620 ◽  
Author(s):  
G. Divya Deepak ◽  
N.K. Joshi ◽  
U. Pal ◽  
R. Prakash
Keyword(s):  
Dielectric Barrier Discharge ◽  
Atmospheric Pressure ◽  
Cold Plasma ◽  
Barrier Discharge ◽  
Supply Voltage ◽  
Electrical Characterization ◽  
Plasma Jet ◽  
Ring Electrode ◽  
Dielectric Barrier

AbstractIn this study, an atmospheric pressure cold plasma jet has been generated based on dielectric barrier discharge plasma. The double ring electrode configuration is used and analysis has been performed subjected to wide range of supply frequencies up to 25 kHz and supply voltage up to 6 kV. The electrical characterization of the plasma jet has been carried out using a high voltage probe. The V-I characteristics of the developed cold plasma jet have been studied and the consumption of the power has been analyzed at various input combinations of supply frequency and applied voltage. Consequently, the supply voltage and supply frequency are optimized with respect to the discharge current and jet length for optimum power consumption. The peak power consumed for glow discharge operation has been found to be 1.27 W in the optimized configuration.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

Case Studies in Atomic Force Probe Analysis

2006 ◽  
Author(s):  
Randal Mulder ◽  
Sam Subramanian ◽  
Tony Chrastecky
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Light Emission ◽  
Electrical Characterization ◽  
Logic Circuits ◽  
Contrast Imaging ◽  
Atomic Force ◽  
Measuring Surface ◽  
Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

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