Microfluidic injector simulation with SAW sensor for 3D integration

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

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A 3D-Integration method to compensate output voltage degradation of boost converter for compact Solid-State-Drives

2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International ◽

10.1109/3dic.2012.6263023 ◽

2012 ◽

Cited By ~ 1

Author(s):

Teruyoshi Hatanaka ◽

Koh Johguchi ◽

Ken Takeuchi

Keyword(s):

Solid State ◽

Output Voltage ◽

Integration Method ◽

Boost Converter ◽

Solid State Drives ◽

3D Integration ◽

Voltage Degradation

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Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts

Advanced Electronic Materials ◽

10.1002/aelm.202100101 ◽

2021 ◽

pp. 2100101

Author(s):

Masiar Sistani ◽

Raphael Böckle ◽

Lukas Wind ◽

Kilian Eysin ◽

Xavier Maeder ◽

...

Keyword(s):

Semiconductor Heterostructures ◽

3D Integration ◽

Wafer Scale

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Highly Sensitive Hybrid Nanostructures for Dimethyl Methyl Phosphonate Detection

Micromachines ◽

10.3390/mi12060648 ◽

2021 ◽

Vol 12 (6) ◽

pp. 648

Author(s):

Sanjeeb Lama ◽

Jinuk Kim ◽

Sivalingam Ramesh ◽

Young-Jun Lee ◽

Jihyun Kim ◽

...

Keyword(s):

Chemical Warfare Agents ◽

Reduction Process ◽

Thermal Reduction ◽

Hybrid Nanostructures ◽

Nitrogen Doped ◽

Saw Sensor ◽

Quartz Crystal Microbalance Sensor ◽

Warfare Agents ◽

Nitrogen Doped Graphene ◽

Doped Graphene

Nanostructured materials synthesized by the hydrothermal and thermal reduction process were tested to detect the dimethyl methylphosphonate (DMMP) as a simulant for chemical warfare agents. Manganese oxide nitrogen-doped graphene oxide with polypyrrole (MnO2@NGO/PPy) exhibited the sensitivity of 51 Hz for 25 ppm of DMMP and showed the selectivity of 1.26 Hz/ppm. Nitrogen-doped multi-walled carbon nanotube (N-MWCNT) demonstrated good linearity with a correlation coefficient of 0.997. A comparison between a surface acoustic wave and quartz crystal microbalance sensor exhibited more than 100-times higher sensitivity of SAW sensor than QCM sensor.

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