The Impact of Different TiN Capping Metal Thicknesses on High-k Oxygen Vacancies in n-MOSFETs

2017 ◽  
Vol 17 (4) ◽  
pp. 799-801
Author(s):  
Jih-Chien Liao ◽  
Ting-Chang Chang ◽  
Wei-Ren Syong ◽  
Ying-Hsin Lu ◽  
Hsi-Wen Liu ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
High K ◽  
The Impact

scholarly journals Negative oxygen vacancies in HfO2 as charge traps in high-k stacks

2006 ◽  
Vol 89 (8) ◽  
pp. 082908 ◽  
Author(s):  
J. L. Gavartin ◽  
D. Muñoz Ramo ◽  
A. L. Shluger ◽  
G. Bersuker ◽  
B. H. Lee
Keyword(s):  
Oxygen Vacancies ◽  
High K

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

The Impact of Hydrogen Plasma Treatments at Moderate Temperatures on Sintered Zinc Oxide Samples - Evidence for Hydrogen Induced Nano-Void Formation

2006 ◽  
Vol 957 ◽  
Author(s):  
Reinhart Job
Keyword(s):  
Zinc Oxide ◽  
Oxygen Vacancies ◽  
Hydrogen Plasma ◽  
Void Formation ◽  
Vibration Modes ◽  
Plasma Exposure ◽  
Plasma Treatments ◽  
The Impact ◽  
Substrate Temperatures ◽  
Defect Species

ABSTRACTUsing μ-Raman spectroscopy (μRS) analyses, the impact of hydrogen plasma treatments on sintered zinc oxide (ZnO) samples was investigated. H-plasma exposures (150 W, 13.56 MHz) were carried out for 1 hour at substrate temperatures between 250 °C and 500 °C. μRS reveals that plasma hydrogenated ZnO samples are more defective than non-treated ones. On one hand non-specified defect species are created with a maximal density upon plasma hydrogenation at 350 °C, on the other hand the formation of oxygen vacancies (VO) can be traced. The density of VO defects, appearing upon H-plasma exposure, is not significantly correlated to the applied substrate temperatures. μRS also reveals vibration modes of H2 molecules trapped in nano-voids. The μRS results indicate that those nano-voids are created by the coalescence of VO defects.

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

2021 ◽  
Author(s):  
SHIKHA U S ◽  
Rekha K James ◽  
Jobymol Jacob ◽  
Anju Pradeep
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Negative Capacitance ◽  
Double Gate ◽  
High K ◽  
Gate Control ◽  
Effect Transistor ◽  
Dimensional Simulation ◽  
The Impact ◽  
Low K

Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.

scholarly journals The impact of fog nozzle type on the distribution of mass spray density

2018 ◽  
Vol 247 ◽  
pp. 00058 ◽  
Author(s):  
Wiktor Wąsik ◽  
Agata Walczak ◽  
Tomasz Węsierski
Keyword(s):  
Spray Angle ◽  
Average Mass ◽  
Droplet Distribution ◽  
Stream Structure ◽  
High K ◽  
Spray Density ◽  
K Factor ◽  
The Impact ◽  
Uniform Droplet ◽  
Nozzle Type

This study was undertaken to analyze the influence of nozzle type on a mass spray density. The results indicated that the most uniform droplet distribution and spraying area was observed for the impact nozzle P 54. The highest mass spray density and the lowest spraying were noticed for the spiral nozzle TF 6. The high values of mass spray density for TF 6 nozzle were associated with the high K-factor value and the low spray angle. The results also showed that the construction of spiral nozzles influence the stream structure. The value of average mass spray density was twice as low for CW-50 F nozzle compared to TF 6.

Impact of oxygen vacancies on TiO2 charge carrier transfer for photoelectrochemical water splitting

2020 ◽  
Vol 49 (7) ◽  
pp. 2184-2189 ◽  
Author(s):  
Xiaoqian Huang ◽  
Xiaoru Gao ◽  
Qihui Xue ◽  
Can Wang ◽  
Ruikang Zhang ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Water Splitting ◽  
Oxygen Vacancies ◽  
Photoelectrochemical Water Splitting ◽  
Carrier Transfer ◽  
The Impact

The impact of oxygen vacancies on charge carrier transfer on TiO2 photoanodes is rationally discussed in this work.

Defect Energy Levels in HfO2, ZrO2, La2O3 and SrTiO3

2004 ◽  
Vol 811 ◽  
Author(s):  
K Xiong ◽  
P W Peacock ◽  
J Robertson
Keyword(s):  
Band Gap ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Density Approximation ◽  
Weighted Density ◽  
Defect Energy ◽  
High K ◽  
Screened Exchange ◽  
Weighted Density Approximation

AbstractDefect energy levels of oxygen vacancies in various high K oxides HfO2, ZrO2, La2O3 and SrTiO3 have been calculated using methods which give the correct band gap, such as the screened exchange and weighted density approximation.

First-principles exploration of oxygen vacancy impact on electronic and optical properties of ABO3−δ (A = La, Sr; B = Cr, Mn) perovskites

2020 ◽  
Vol 22 (46) ◽  
pp. 27163-27172
Author(s):  
Jongwoo Park ◽  
Yu-Ning Wu ◽  
Wissam A. Saidi ◽  
Benjamin Chorpening ◽  
Yuhua Duan
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Oxygen Vacancy ◽  
First Principles ◽  
Oxygen Vacancies ◽  
Gas Sensing ◽  
Optical Responses ◽  
Sensing Applications ◽  
Optical Gas Sensing ◽  
The Impact

We explore via first-principles the impact of oxygen vacancies on the electronic structure and optical responses of ABO3−δ (A = La, Sr; B = Cr, Mn) perovskites, which provides a reference for optical gas sensing applications.

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