A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime

2012 ◽  
Vol 59 (1) ◽  
pp. 197-205 ◽  
Author(s):  
Vinayak M. Mahajan ◽  
Pradeep Rao Patalay ◽  
Renuka P. Jindal ◽  
Hisashi Shichijo ◽  
Sam Martin ◽  
...  
Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.


1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.


1988 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
H. Schwenke ◽  
W. Berneike ◽  
J. Knoth ◽  
U. Weisbrod

AbstractThe total reflection of X-rays is mainly determined by three parameters , that is the orltical angle, the reflectivity and the penetration depth. For X-ray fluorescence analysis the respective characteristic features can be exploited in two rather different fields of application. In the analysis of trace elements in samples placed as thin films on optical flats, detection limits as low as 2 pg or 0.05 ppb, respectively, have been obtained. In addition, a penetration depth in the nanometer regime renders Total Reflection XRF an inherently sensitive method for the elemental analysis of surfaces. This paper outlines the main physical and constructional parameters for instrumental design and quantitation in both branches of TXRF.


2001 ◽  
Vol 48 (12) ◽  
pp. 2884-2892 ◽  
Author(s):  
Chih-Hung Chen ◽  
M.J. Deen ◽  
Yuhua Cheng ◽  
M. Matloubian

Author(s):  
Jung-Suk Goo ◽  
Chang-Hoon Choi ◽  
E. Morifuji ◽  
H.S. Momose ◽  
Zhiping Yu ◽  
...  

2007 ◽  
Vol 12 (1) ◽  
pp. 36-37 ◽  
Author(s):  
R. H. Dennard ◽  
F. H. Gaensslen ◽  
H. N. Yu ◽  
V. L. Rideout ◽  
E. Bassous ◽  
...  

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