scholarly journals Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

2018 ◽  
Vol 33 (12) ◽  
pp. 10594-10601 ◽  
Author(s):  
Li Yang ◽  
Ke Li ◽  
Jingru Dai ◽  
Martin Corfield ◽  
Anne Harris ◽  
...  
Keyword(s):  
Electrical Performance ◽  
Power Module ◽  
Decoupling Capacitors

PLA conductive filament for 3D printed smart sensing applications

2018 ◽  
Vol 24 (4) ◽  
pp. 739-743 ◽  
Author(s):  
Simone Luigi Marasso ◽  
Matteo Cocuzza ◽  
Valentina Bertana ◽  
Francesco Perrucci ◽  
Alessio Tommasi ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Low Cost ◽  
Conductive Polymer ◽  
Temperature Characteristic ◽  
Temperature Sensors ◽  
Electrical Performance ◽  
Content Type ◽  
Sensing Applications ◽  
3D Printed

Purpose This paper aims to present a study on a commercial conductive polylactic acid (PLA) filament and its potential application in a three-dimensional (3D) printed smart cap embedding a resistive temperature sensor made of this material. The final aim of this study is to add a fundamental block to the electrical characterization of printed conductive polymers, which are promising to mimic the electrical performance of metals and semiconductors. The studied PLA filament demonstrates not only to be suitable for a simple 3D printed concept but also to show peculiar characteristics that can be exploited to fabricate freeform low-cost temperature sensors. Design/methodology/approach The first part is focused on the conductive properties of the PLA filament and its temperature dependency. After obtaining a resistance temperature characteristic of this material, the same was used to fabricate a part of a 3D printed smart cap. Findings An approach to the characterization of the 3D printed conductive polymer has been presented. The major results are related to the definition of resistance vs temperature characteristic of the material. This model was then exploited to design a temperature sensor embedded in a 3D printed smart cap. Practical implications This study demonstrates that commercial conductive PLA filaments can be suitable materials for 3D printed low-cost temperature sensors or constitutive parts of a 3D printed smart object. Originality/value The paper clearly demonstrates that a new generation of 3D printed smart objects can already be obtained using low-cost commercial materials.

Multiphysics Performance Evaluation of Flexible Substrate Based 1.2kV SiC Half Bridge Intelligent Power Module with Stacked Dies

2017 ◽  
Vol 2017 (1) ◽  
pp. 000353-000359
Author(s):  
Xin Zhao ◽  
K. Jagannadham ◽  
Douglas C. Hopkins
Keyword(s):  
Performance Evaluation ◽  
Mechanical Design ◽  
Model Simulation ◽  
Flexible Substrate ◽  
Junction Temperature ◽  
Electrical Performance ◽  
Power Module ◽  
Parasitic Inductance ◽  
Regular Module ◽  
Intelligent Power Module

Abstract Wide Bandgap (WBG) power devices have become the most promising solution for power conversion systems, with the best trade-off between theoretical characteristics, real commercial availability and maturity of fabrications. Advanced packaging technology is being heavily developed to take full advantages of WBG devices, in terms of materials, mechanical design, fabrication and electrical performance optimizations. In this paper, a flexible substrate based 1.2kV SiC Half Bridge Intelligent Power Module with stacked dies is introduced. The module design is based on the concept “Power Supply in Package (PSiP)”, high functionality is integrated in the module. Together with power stages, gate driver circuits, Low Dropout Regulators (LDO), digital isolators, and bootstrap circuits are integrated in the module. An ultra-thin flexible epoxy-resin based dielectric is applied in the module as substrates, its thickness can be as low as 80μm, with 8W/mK thermal conductivity. The SiC switches are double-side solderable, with copper as topside metallization on pads. No bonding wires are applied in the SiC PSiP module. The highside and lowside SiC switches on the phase leg is stacked vertically for interconnections with low parasitic and high denstiy. This work mainly addresses performance evaluation of the PSiP SiC half bridge module by multiphysics simulations. Q3D is employed to evaluate the parasitic inductance and resistance in the module, showing that parasitic inductance is lower than 1.5nH in the design. The extracted parasitics is imported in spice circuit model, simulation results show limited ringing during switching transients. Thermal simulations are employed to compare junction temperature of power modules with DBC subtrates and flexible substrates, then to evaluate the thermal performance of the designed PSiP SiC model with stacked dies. It shows that junction temperature of designed IPM is higher than regular module at same condition. The paper also provides guideline for optimized heat sink design to lower junction temperature of the SiC IPM. Mechanical simulations are employed to evaluate the pre-stress induced in modules with DBC substrate and flexible dielectric substrate, and proves that mechanical stress induced by reflowing process can be reduced significantly by using ultra-thin flexible dielectric as substrate.

Thermal Characterization of Non-Isolated DC to DC Convertor

2011 ◽  
Author(s):  
Shiladitya Chakravorty ◽  
Bahgat Sammakia ◽  
Varaprasad Calmidi
Keyword(s):  
Power Dissipation ◽  
High Performance ◽  
Field Effect Transistors ◽  
Thermal Characteristics ◽  
Thermal Characterization ◽  
Input Voltage ◽  
Thermal Design ◽  
Power Module ◽  
Improved Performance

Improved performance of semiconductor devices in recent years has resulted in consequent increase in power dissipation. Hence thermal characterization of components becomes important from an overall thermal design perspective of the system. This study looks at a high performance non-isolated point of load power module (a DC to DC converter) meant for advanced computing and server applications. Thermal characteristics of the module were experimentally analyzed by placing the power module on a bare test board (with no insulation) inside a wind tunnel with thermocouples attached to it. There were three devices on this module that dissipate power. There were two FETs (Field Effect Transistors) and an inductor which can be considered as sources. The consolidated power dissipation from the module was calculated by measuring the input voltage and input current while keeping the output voltage and current constant. Temperatures at various points on the module and the test card were recorded for different air flow velocities and overall power dissipation. Subsequently this set up was numerically analyzed using a commercially available computational fluid dynamics (CFD) code with the objective of comparing the results with experimental data previously obtained.

scholarly journals Structural Characterization of Movpe Grown Algan/Gan for Hemt Formation

2018 ◽  
Vol 57 (1) ◽  
pp. 72-81 ◽  
Author(s):  
V.N. Popok ◽  
T.S. Aunsborg ◽  
R.H. Godiksen ◽  
P.K. Kristensen ◽  
R.R. Juluri ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Charge Carrier Concentration ◽  
Electrical Performance ◽  
Clear Understanding ◽  
Si Substrates ◽  
Transfer Of Technology ◽  
Dislocation Densities ◽  
Unusual Phenomenon ◽  
Aln Buffer

Abstract Results on structural, compositional, optical and electrical characterization of MOVPE grown AlGaN/GaN heterostructures with focus on understanding how the AlN buffer synthesis affects the top films are reported. The study demonstrates very good correlation between different methods providing a platform for reliable estimation of crystalline quality of the AlGaN/GaN structures and related to that electrical performance which is found to be significantly affected by threading dislocations (TD): higher TD density reduces the electron mobility while the charge carrier concentration is found to be largely unchanged. The attempt to vary the ammonia flow during the AlN synthesis is found not to affect the film composition and dislocation densities in the following heterostructures. An unusual phenomenon of considerable diffusion of Ga from the GaN film into the AlN buffer is found in all samples under the study. The obtained results are an important step in optimization of AlGaN/GaN growth towards the formation of good quality HEMT structures on sapphire and transfer of technology to Si substrates by providing clear understanding of the role of synthesis parameter on structure and composition of the films.

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