On-line thermal resistance and reliability characteristic monitoring of power modules with Ag sinter joining and Pb, Pb-free solders during power cycling test by SiC TEG chip

2020 ◽  
pp. 1-1
Author(s):  
Dongjin Kim ◽  
Shijo Nagao ◽  
Chuantong Chen ◽  
Naoki Wakasugi ◽  
Yasuyuki Yamamoto ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Cycling Test ◽  
Reliability Characteristic ◽  
Power Cycling ◽  
Power Modules ◽  
On Line ◽  
Sinter Joining

scholarly journals Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 745
Author(s):  
Dongjin Kim ◽  
Yasuyuki Yamamoto ◽  
Shijo Nagao ◽  
Naoki Wakasugi ◽  
Chuantong Chen ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Heat Dissipation ◽  
Wide Band ◽  
Middle Layer ◽  
Thermal Interface Material ◽  
Wide Band Gap ◽  
Power Cycle ◽  
Power Cycling ◽  
Power Modules ◽  
Pattern Line

This study introduced the SiC micro-heater chip as a novel thermal evaluation device for next-generation power modules and to evaluate the heat resistant performance of direct bonded copper (DBC) substrate with aluminum nitride (AlN-DBC), aluminum oxide (DBC-Al2O3) and silicon nitride (Si3N4-DBC) ceramics middle layer. The SiC micro-heater chips were structurally sound bonded on the two types of DBC substrates by Ag sinter paste and Au wire was used to interconnect the SiC and DBC substrate. The SiC micro-heater chip power modules were fixed on a water-cooling plate by a thermal interface material (TIM), a steady-state thermal resistance measurement and a power cycling test were successfully conducted. As a result, the thermal resistance of the SiC micro-heater chip power modules on the DBC-Al2O3 substrate at power over 200 W was about twice higher than DBC-Si3N4 and also higher than DBC-AlN. In addition, during the power cycle test, DBC-Al2O3 was stopped after 1000 cycles due to Pt heater pattern line was partially broken induced by the excessive rise in thermal resistance, but DBC-Si3N4 and DBC-AlN specimens were subjected to more than 20,000 cycles and not noticeable physical failure was found in both of the SiC chip and DBC substrates by a x-ray observation. The results indicated that AlN-DBC can be as an optimization substrate for the best heat dissipation/durability in wide band-gap (WBG) power devices. Our results provide an important index for industries demanding higher power and temperature power electronics.

Advanced power cycling test for power module with on-line on-state VCE measurement

2015 ◽  
Author(s):  
Ui-Min Choi ◽  
Ionut Trintis ◽  
Frede Blaabjerg ◽  
Soren Jorgensen ◽  
Morten Liengaard Svarre
Keyword(s):  
Power Module ◽  
Cycling Test ◽  
Power Cycling ◽  
On Line

Improvement of High Power Cycling Reliability having Sn-Cu Based Solder

2015 ◽  
Vol 2015 (1) ◽  
pp. 000443-000448 ◽  
Author(s):  
Miyazaki Takaaki ◽  
Ikeda Osamu
Keyword(s):  
High Temperature ◽  
High Power ◽  
Power Cycle ◽  
Cycling Test ◽  
Operation Temperature ◽  
Power Cycling ◽  
Power Modules ◽  
Temperature Environment ◽  
Bonding Technology ◽  
High Temperature Environment

Demands of the raising operation temperature of power modules have been increasing in recent years. However, the power cycle capability is insufficient when used in a high temperature environment to apply the conventional Sn-based solder. In this study, we have developed a highly reliable bonding technology that improves the characteristics of the Sn phase by adding additional elements Bi, In, Sb to the Sn-7Cu solder. Power cycling test(Tjmax175°C) was carried out to evaluate the reliability. Power cycling reliability of Sn7Cu3Bi, Sn7Cu10Sb is approximately 3 times, 6 times higher than Sn7Cu.

scholarly journals Effect of load sequence interaction on bond-wire lifetime due to power cycling

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zoubir Khatir ◽  
Son-Ha Tran ◽  
Ali Ibrahim ◽  
Richard Lallemand ◽  
Nicolas Degrenne
Keyword(s):  
High Stress ◽  
Bipolar Transistors ◽  
Junction Temperature ◽  
Experimental Investigations ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wire ◽  
Load Sequence ◽  
The Difference ◽  
Heating Duration

AbstractExperimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

Strengthening of DBA substrate with Ni/Ti/Ag metallization for thermal fatigue-resistant Ag sinter joining in GaN power modules

2020 ◽  
Vol 31 (4) ◽  
pp. 3715-3726 ◽  
Author(s):  
Dongjin Kim ◽  
Chuantong Chen ◽  
Seung-Joon Lee ◽  
Shijo Nagao ◽  
Katsuaki Suganuma
Keyword(s):  
Thermal Fatigue ◽  
Power Modules ◽  
Sinter Joining

Low-Temperature Joining Technique as Interconnection Technology for Power Electronics

2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro
Keyword(s):  
Low Temperature ◽  
Power Electronics ◽  
Life Time ◽  
Junction Temperature ◽  
Limiting Factors ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Cycling ◽  
Power Modules ◽  
Bond Wires

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.

Sign in / Sign up

Export Citation Format

Share Document