A highly linear and tunable feed forward current source active inductor in 65nm CMOS technology for mobile applications

2011 ◽  
Author(s):  
F. Robert ◽  
Ph. Cathelin ◽  
A. Die ◽  
M. Villegas ◽  
F. Epifano ◽  
...  
Keyword(s):  
Mobile Applications ◽  
Current Source ◽  
Cmos Technology ◽  
Active Inductor ◽  
Feed Forward ◽  
Forward Current

Tunable CMOS Active Inductor Using Widlar Current Source

2018 ◽  
Vol 28 (02) ◽  
pp. 1950027 ◽  
Author(s):  
Dhara P Patel ◽  
Shruti Oza-Rahurkar
Keyword(s):  
Quality Factor ◽  
Supply Voltage ◽  
Noise Analysis ◽  
Current Source ◽  
Cmos Technology ◽  
The Other ◽  
Active Inductor ◽  
Voltage Sensitivity ◽  
Current Mirror ◽  
Characterization Factors

A novel tuning principle for simple gyrator-based CMOS active inductor (AI) circuit is presented. The method makes use of Widlar current source to enhance the quality factor. The simulation of the proposed AI provides a maximum quality factor of 1819 at 2.88[Formula: see text]GHz. The AI shows the inductive bandwidth of 1.66[Formula: see text]GHz to 3.16[Formula: see text]GHz and power consumption of 6.87[Formula: see text]mW. The other characterization factors such as linearity, supply voltage sensitivity and noise analysis are discussed. The performance of the tunable AI using Widlar current source are compared with the same using a simple current mirror. An AI using a conventional current mirror (CCM) and Widlar current source have been implemented in the 0.18[Formula: see text][Formula: see text]m CMOS technology.

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

scholarly journals Bus Implementation Using New Low Power PFSCL Tristate Buffers

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Neeta Pandey ◽  
Bharat Choudhary ◽  
Kirti Gupta ◽  
Ankit Mittal
Keyword(s):  
Power Consumption ◽  
Current Source ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Performance Parameters ◽  
Interesting Consequence ◽  
Spice Simulation ◽  
High Impedance ◽  
Parameter Variations ◽  
Feedback Source

This paper proposes new positive feedback source coupled logic (PFSCL) tristate buffers suited to bus applications. The proposed buffers use switch to attain high impedance state and modify the load or the current source section. An interesting consequence of this is overall reduction in the power consumption. The proposed tristate buffers consume half the power compared to the available switch based counterpart. The issues with available PFSCL tristate buffers based bus implementation are identified and benefits of employing the proposed tristate buffer topologies are put forward. SPICE simulation results using TSMC 180 nm CMOS technology parameters are included to support the theoretical formulations. The performance of proposed tristate buffer topologies is examined on the basis of propagation delay, output enable time, and power consumption. It is found that one of the proposed tristate buffer topology outperforms the others in terms of all the performance parameters. An examination of behavior of available and the proposed PFSCL tristate buffer topologies under parameter variations and mismatch shows a maximum variation of 14%.

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

An Ultra-Low-Power, 16 Bits CT Delta-Sigma Modulator Using 4-Bit Asynchronous SAR Quantizer for Medical Applications

2019 ◽  
Vol 29 (04) ◽  
pp. 2050056
Author(s):  
Sahel Javahernia ◽  
Esmaeil Najafi Aghdam ◽  
Pooya Torkzadeh
Keyword(s):  
Low Power ◽  
Cmos Technology ◽  
Digital To Analog Converter ◽  
Ultra Low Power ◽  
Feed Forward ◽  
Delta Sigma Modulator ◽  
Delta Sigma ◽  
Summing Amplifier ◽  
Capacitor Structure ◽  
Asynchronous Sar

In this paper, a low-power second-order feed-forward capacitor-structure continuous-time [Formula: see text] modulator with a 4-bit asynchronous successive approximation register (SAR) quantizer is presented. Through the utilization capacitor structure in the proposed modulator, first, the summation node of the integrators’ outputs and the feed-forward signals is implemented within the second integrator to reduce power consumption by eliminating an active summing amplifier. Second, the proposed architecture can compensate for the quantizer delay without using any excess inner digital to analog converter (DAC). In this design, the modulator applies two different low-power operational amplifiers. These advantages cause the modulator to consume very low power and achieve a favorable figure of merit (FOM) value. In fact, in this paper, the combination of the previously reported methods and designs and doing required reforms has led to a new design with better performance, especially in power reduction. The designed modulator which is simulated using 0.18[Formula: see text][Formula: see text]m CMOS technology achieves 95.98[Formula: see text]dB peak signal-to-noise and distortion (SNDR) for 10[Formula: see text]KHz signal bandwidth and dissipates 44[Formula: see text][Formula: see text]w while its FOM is obtained about 43 fJ/conv.-step.

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