Lattice-Matched III–V Dual-Junction Solar Cells for Concentrations Around 1000 Suns

2006 ◽  
Vol 129 (3) ◽  
pp. 336-339 ◽  
Author(s):  
C. Algora ◽  
I. Rey-Stolle ◽  
I. García ◽  
B. Galiana ◽  
M. Baudrit ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Solar Spectrum ◽  
Second Stage ◽  
Starting Point ◽  
First Results ◽  
The Cost ◽  
Further Development ◽  
Lattice Matched

Concentration photovoltaic (PV) based on III–V solar cells is one of the most promising technologies for dramatically reducing the cost of PV electricity. In order to reduce costs, a high efficiency is usually pursued. This is the main reason for the huge development of multijunction cells (MJCs) which are able to achieve very high efficiencies thanks to their more efficient use of the solar spectrum. In the first stage, our approach to reduce the cost of photovoltaic electricity consists of a further development of the lattice matched GaInP∕GaAs dual junction solar cell in order to achieve efficiencies of over 30% at 1000 suns (AM1.5D low aerosol optical depth (AOD)). In the second stage, this approach will allow us to develop lattice matched GaInP∕Ga(In)As∕Ge triple junction solar cells with higher efficiency and lower cost. In this technical brief, we have set out the philosophy, including a brief incursion into economics, and our first results of dual-junction solar cells for high concentrator applications. Our best result is an efficiency of 27.6% at 180 suns while at 1000 suns the efficiency is 26% (AM1.5D low AOD). The price of a PV installation based on our best solar cell to date (efficiency of 26% operating at 1000 suns) would be 3.6$∕Wp. For solar cells with efficiencies of 30% at 1000 suns, the price after a cumulated production of 10MWp of a PV installation would be 3.3$∕Wp. The efficiencies attained (∼26%) at 1000 suns although still far from our objective of 30%, establish a reasonable starting point for future developments. It is evident that the conservative design implemented has much room for improvement which is now under development in our lab.

scholarly journals Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 87 ◽  
Author(s):  
Yunyan Zhang ◽  
Huiyun Liu
Keyword(s):  
Thin Film ◽  
Energy Source ◽  
Solar Cells ◽  
Solar Cell ◽  
Solar Energy ◽  
High Efficiency ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Solar Photovoltaics ◽  
The Cost

Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

scholarly journals Advances in High-Efficiency III-V Multijunction Solar Cells

2007 ◽  
Vol 2007 ◽  
pp. 1-8 ◽  
Author(s):  
Richard R. King ◽  
Daniel C. Law ◽  
Kenneth M. Edmondson ◽  
Christopher M. Fetzer ◽  
Geoffrey S. Kinsey ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Solar Spectrum ◽  
Wide Band ◽  
Photovoltaic Cell ◽  
Maximum Energy ◽  
Band Gaps ◽  
High Concentration ◽  
Solar Cell Performance

The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C), and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured efficiency of 35.7% under the AM1.5 direct terrestrial solar spectrum at 256 suns.

III-V Multi-Junction Materials and Solar Cells on Engineered SiGe/Si Substrates

2004 ◽  
Vol 836 ◽  
Author(s):  
Steven A. Ringel ◽  
Carrie L. Andre ◽  
Matthew Lueck ◽  
David Isaacson ◽  
Arthur J. Pitera ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Performance ◽  
High Efficiency ◽  
Defect Density ◽  
Basic Research ◽  
Open Circuit ◽  
Si Substrates ◽  
Lattice Matched ◽  
Open Circuit Voltages

ABSTRACTThe monolithic integration of high efficiency III-V compound solar cell materials and devices with lower-cost, robust and scaleable Si substrates has been a driving force in photovoltaics (PV) basic research for decades. Recent advances in controlling mismatch-induced defects that result from structural and chemical differences between III-V solar cell materials and Si using a combination of SiGe interlayers and monolayer-scale control of III-V/IV interfaces, have led to a series of fundamental advances at the material and device levels, which establish that the great potential of III-V/Si PV is within reach. These include demonstrations of GaAs epitaxial layers on Si that are anti-phase domain-free with verified dislocation densities at or below 1×106 cm−2 and negligible interface diffusion, minority carrier lifetimes for GaAs on Si in excess of 10 ns, single junction GaAs-based solar cells on Si with open circuit voltages (Voc) in excess of 980 mV, efficiencies beyond 18%, and area-independent PV characteristics up to at least 4 cm2. These advances are attributed in large part to the use of a novel “engineered Si substrate” based on compositionally-graded SiGe buffers such that a high-quality, low defect density, relaxed, “virtual” Ge substrate could be developed that can support lattice-matched III-V epitaxy and thus merge III-V technology based on the GaAs (or Ge) lattice constant with Si wafers. This paper focuses on recent results that extend this work to the first demonstration of high performance III-V dual junction solar cells on SiGe/Si. Open circuit voltages in excess of 2 V at one-sun have been obtained for the conventionally “lattice-matched” In0.49Ga0.51P/GaAs dual junction cells on inactive, engineered SiGe/Si; to our knowledge is the first demonstration of > 2V solar power generation on a Si wafer. Comparisons with identical cells on GaAs substrates reveal that the Voc on engineered Si retains more than 94% of its homoepitaxial value, and that at present both DJ/GaAs and DJ/SiGe/Si cells are similarly limited by current mismatch in these early cells, and not fundamental defect factors associated with the engineered Si substrates.

scholarly journals High-Efficiency Ultrathin Si-Based Solar Cells by Cascading Dilute-Nitride GaNAsP

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7415
Author(s):  
Yen-Ju Lin ◽  
David Jui-Yang Feng ◽  
Tzy-Rong Lin
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Power Conversion ◽  
Dilute Nitride ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Tandem Cell ◽  
Lattice Matched ◽  
Cell Thickness

Thin-film solar cells are currently an important research subject. In this study, a lattice-matched GaNAsP/Si tandem cell was designed. We adopted the drift-diffusion model to analyze the power conversion efficiency (PCE) of the solar cell. To find the maximum solar cell PCE, the recombination terms and the interlayer between subcells was omitted. For an optimal tandem cell PCE, this study analyzed the mole fraction combinations of GaNAsP and the thickness combinations between the GaNAsP and the Si subcells of the tandem cell. Our results showed the superiority of the tandem cell over the Si cell. The 4.5 μm tandem cell had a 12.7% PCE, the same as that of the 10.7 μm Si cell. The 11.5 μm tandem cell had 20.2% PCE, while the 11.5 μm Si cell processed 12.7% PCE. We also analyzed the Si subcell thickness ratio of sub-12 μm tandem cells for maximum PCE. The tandem cell with a thickness between 40% to 70% of a Si cell would have a max PCE. The ratio depended on the tandem cell thickness. We conclude that the lattice-matched GaNAsP/Si tandem cell has potential for ultrathin thin Si-based solar cell applications.

scholarly journals Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jaya Madan ◽  
Karanveer Singh ◽  
Rahul Pandey
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Transmission Loss ◽  
Defect Density ◽  
Low Cost ◽  
Solar Spectrum ◽  
Tandem Solar Cell ◽  
Tandem Solar Cells ◽  
Bottom Cell

AbstractThe major losses that limit the efficiency of a single-junction solar cell are thermalization loss and transmission loss. Thus, to efficiently utilize the full solar spectrum and to mitigate these losses, tandem solar cells (TSC) have significantly impacted the photovoltaic (PV) landscape. In this context, the research on perovskite/silicon tandems is currently dominating the research community. The stability improvements of perovskite materials and mature fabrication techniques of silicon have underpinned the rapid progress of perovskite/silicon TSC. However, the low absorption coefficient and high module cost of the silicon are the tailbacks for the mass production of perovskite/silicon TSCs. Therefore, PV technology demands to explore some new materials other than Si to be used as absorber layer in the bottom cell. Thus, here in this work, to mitigate the aforementioned losses and to reduce cost, a 23.36% efficient two-terminal perovskite-PbS CQD monolithic tandem solar cell has been designed through comprehensive device simulations. Before analyzing the performance of the proposed TSC, the performance of perovskite top cells has been optimized in terms of variation in optical properties, thickness, and interface defect density under standalone conditions. Thereafter, filtered spectrum and associated integrated filtered power by the top cell at different perovskite thickness from 50 to 500 nm is obtained to conceive the presence of the top cell above the bottom cell with different perovskite thickness. The current matching by concurrently varying the thickness of both the top and bottom subcell has also been done to obtain the maximum deliverable tandem JSC for the device under consideration. The top/bottom subcell with current matched JSC of 16.68 mA cm−2/16.62 mA cm−2 showed the conversion efficiency of 14.60%/9.07% under tandem configuration with an optimized thickness of 143 nm/470 nm, where the top cell is simulated under AM1.5G spectrum, and bottom cell is exposed to the spectrum filtered by 143 nm thick top cell. Further, the voltages at equal current points are added together to generate tandem J–V characteristics. This work concludes a 23.36% efficient perovskite-PbS CQD tandem design with 1.79 V (VOC), 16.67 mA cm−2 (JSC) and 78.3% (FF). The perovskite-PbS CQD tandem device proposed in this work may pave the way for the development of high-efficiency tandem solar cells for low-cost applications.

scholarly journals Synthesis Techniques for rare Earth doped up-conversion Nano-materials for Solar cells – A brief Review

2021 ◽  
Vol 889 (1) ◽  
pp. 012057
Author(s):  
Rinku Kumari ◽  
Karan Singh Vinayak ◽  
Deepak Kumar
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Theoretical Perspective ◽  
Perovskite Solar Cells ◽  
Solar Spectrum ◽  
Nano Particles ◽  
Nano Materials ◽  
Synthesis Techniques ◽  
Conversion Materials

Abstract Extended efficiency of solar cells to ensemble more solar energy as well as its optimum conversion and utilization is believed to be a major challenge in current times. The spectral mismatch between the distribution of energy in the solar spectrum incidence and the semiconducting material band gap is a major restriction in the performance of solar cells. The conversion of wavelength of the sun is a necessary requisite to reduce spectral disruption. Of late, the solar cell converters are presumed as up-converted components and products derived from down conversion. Materials like NaCsWO3, NaYF4, and NaYF4: Yb, Er are synthesized and used to overcome the problem like deficiency of up-conversion luminescence (UCL) materials and device structures. The intensity of UCL can be enhanced by a significant time when the amount of NaCsWO3 is 2.8 m mol per cent. UCL material is considered as one of the best approaches to obtain high-efficiency perovskite solar cells (PSCs). In order to overcome these difficulties, not only were these effective up-conversion nano-particles (UPCNPs) doped into the hole layer but the perovskite foil was also modified in PSCs. The highest power conversion (PCE) performance reached 18.89%. Enhanced UCLs allow for UCNPs to extend the recognition spectrum of near PSCs. The objective of this comprehensive and focused review is to highlight the different synthesis techniques used in up-conversion nano-materials, for solar cell applications along with a theoretical perspective in this regard.

Overview of Si Tandem Solar Cells and Approaches to PV-Powered Vehicle Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (8-9) ◽  
pp. 441-450 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Kan-Hua Lee ◽  
Daisuke Sato ◽  
Kenji Araki ◽  
Nobuaki Kojima ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Low Cost ◽  
Clean Energy ◽  
High Potential ◽  
Tandem Solar Cells ◽  
Cell Modules ◽  
Application Fields ◽  
Further Development

ABSTRACTDevelopment of high-efficiency solar cell modules and new application fields are significant for the further development of photovoltaics (PV) and creation of new clean energy infrastructure based on PV. Especially, development of PV-powered EV applications is desirable and very important for this end. This paper shows analytical results for efficiency potential of various solar cells for choosing candidates of high-efficiency solar cell modules for automobile applications. As a result of analysis, Si tandem solar cells are thought to be some of their candidates. This paper also overviews efficiency potential and recent activities of various Si tandem solar cells such as III-V/Si, II-VI/Si, chalcopyrite/Si, perovskite/Si and nanowire/Si tandem solar cells. The III-V/Si tandem solar cells are expected to have a high potential for various applications because of high efficiency with efficiencies of more than 36% for 2-junction and 42 % for 3-junction tandem solar cells under 1-sun AM1.5 G, lightweight and low-cost potential. Recent results for our 28.2 % efficiency and Sharp’s 33% mechanically stacked InGaP/GaAs/Si 3-junction solar cell are also presented. Approaches to automobile application by using III-V/Si tandem solar cells and static low concentration are presented.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

Inorganic-Organic Hybrid Nanocomposites for Photovoltaic Applications

2012 ◽  
Vol 571 ◽  
pp. 120-124
Author(s):  
Liang Min Zhang
Keyword(s):  
Solar Cells ◽  
Uv Light ◽  
Solar Spectrum ◽  
Wide Band ◽  
Hybrid Nanocomposites ◽  
Wide Band Gap ◽  
Inorganic Semiconductors ◽  
The Cost ◽  
Ruthenium Dye ◽  
Photovoltaic Characteristics

Hybrid photovoltaic concepts based on a nanoscale combination of organic and inorganic semiconductors are promising way to enhance the cost efficiency of solar cells through a better use of the solar spectrum, a higher ratio of interface-to-volume, and the flexible processability of polymers. In this work, two types of thin film solar cells have been developed. In both types of solar cells, poly-N-vinylcarbazole (PVK) is used as electron donor, cadmium sulfide (CdS) and titanium dioxide (TiO2) nanocrystals are used as electron acceptors, respectively. Since TiO2 has a wide band gap and can only absorb UV light, in the second type of solar cell, ruthenium dye is used as photo-sensitizer. The preliminary results of photoconductive and photovoltaic characteristics of these two inorganic-organic composites are presented.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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