Electron Microscopy Techniques for the Microstructural Characterization of Silicon Nitride
It is well known that the mechanical properties of ceramic materials are directly dependent upon their microstructure with respect to the size, crystallinity, distribution and composition of the phases present. Our understanding of the microstructural details of silicon nitride was enhanced through the application of scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). The SEM and STEM are necessary for analyzing the microstructure of silicon nitride because it is a fine grained material. The SEM is used to analyze the etched microstructure and fracture surfaces of bulk silicon nitride samples. Relationships between the grain size distribution, aspect ratio of the grains and fracture toughness of the material are summarized, as well as fracture origin identity and bend strength data. STEM is employed to analyze the crystallinity, distribution and composition of the phases present in a material. These features are related to the processing parameters, fracture toughness and bend strength of silicon nitride. This paper presents a short description of the microscopy techniques employed to characterize silicon nitride, the results obtained using the various techniques and the relationship between the microstructural features and mechanical properties.