A Thermal Quadrupole-Based Model for Heat Diffusion in a Multilayered System: Application to Determination of Transient Performance of a Medium-Voltage Soft Starter

2008 ◽  
Author(s):  
Fabien Volle ◽  
Suresh V. Garimella ◽  
Mark A. Juds
Keyword(s):  
Heat Dissipation ◽  
Heat Diffusion ◽  
Junction Temperature ◽  
Transient Performance ◽  
Thermal Impedance ◽  
Medium Voltage ◽  
Soft Starter ◽  
Impedance Curve ◽  
Transient Thermal ◽  
Analytical Thermal Model

Adverse effects of starting-torque transients and high inrush currents in induction motors are typically mitigated by employing electronically controlled soft starting voltages through silicon controlled rectifiers (SCRs). However, the heat dissipation in the soft starter must be carefully managed in the design of motor drives. The objective of this study is to address the heat dissipation in the soft starter by implementing analytical solutions to the heat diffusion equations inside the soft starter. The transient analytical thermal model allows an estimation of the thermal system transfer function from the transient thermal impedance curve, and can be incorporated into a dynamic system model in order to determine the transient performance of a soft starter by evaluating the thyristor junction temperature for different switching time profiles, motor and load combinations, and “ON/OFF” cycles. Predictions from the model are validated by comparing against a coupled thermal and electrical model using a resistance/capacitance network approach.

Test of IGBT Transient Thermal Impedance and Modeling Research on Thermal Model

2010 ◽  
Vol 148-149 ◽  
pp. 429-433
Author(s):  
Ming Chen ◽  
Yan Ting Yu ◽  
Bo Wang ◽  
Yong Tang
Keyword(s):  
Numerical Simulation ◽  
Thermal Resistance ◽  
Thermal Model ◽  
Transfer Characteristic ◽  
Physical Structure ◽  
Experimental Results ◽  
Compact Model ◽  
Thermal Impedance ◽  
Impedance Curve ◽  
Transient Thermal

As the operation performances and reliability of semiconductor devices are tightly related to its operating temperature, the research on the heat transfer characteristic and thermal modeling do a significant meaning to extend services lifetime and improve application reliability of the IGBT modules. The physical structure and the conception, RC component network of thermal resistance, test principle and platform of the transient thermal impedance of IGBT module and three modeling methods are briefly introduced. The parameters of Cauer RC thermal network of a certain type IGBT is derived based on transmission line method. The junction-case thermal resistance can be deduced by Finite Element Method in the numerical simulator ANSYS and the transient thermal impedance curve. Thermal compact model can also be deduced from the numerical simulation and experimental results. An excellent agreement is obtained between experimental results derived by the transient thermal impedance curve and numerical simulation results based on FEM. The thermal compact model and experimental results could be helpful for modeling of thermal model and heat sink design for such electronic devices.

scholarly journals Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature

Energies ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 2371
Author(s):  
Bo-Ying Liu ◽  
Gao-Sheng Wang ◽  
Ming-Lang Tseng ◽  
Kuo-Jui Wu ◽  
Zhi-Gang Li
Keyword(s):  
Bipolar Transistor ◽  
Thermal Parameters ◽  
Junction Temperature ◽  
Stable Operation ◽  
Switching Loss ◽  
Thermal Impedance ◽  
Power Module ◽  
Reliable Operation ◽  
Insulated Gate Bipolar Transistor ◽  
Transient Thermal

In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

Investigation Regarding Thermal Resistance of Surface Mount Type Discrete Power Semiconductor Package

2020 ◽  
Author(s):  
Koji Nishi
Keyword(s):  
Thermal Resistance ◽  
Three Dimensional ◽  
Thermal Impedance ◽  
Power Devices ◽  
Power Semiconductor ◽  
Resistance Variation ◽  
Motor Design ◽  
Impedance Curve ◽  
The Difference ◽  
Transient Thermal

Abstract Power electronics is becoming more important than before with motor application expansion. For size reduction of inverter integrated motor design, accurate temperature prediction of power devices is becoming critical. For up to several hundred-watt motor system, inverter is designed with discrete power devices with standard package. This paper investigates package thermal resistance of a DPAK package as an example. Firstly, three-dimensional heat conduction simulation only with DPAK package model is conducted. It is found that its package thermal resistance changes by ∼6.2°C/W due to boundary condition variation. After that, simulation not only with DPAK package but also with PCB is conducted to understand package thermal resistance of a real system implementation case. It is found that package thermal resistance varies drastically by copper trace size. “Smallest” case with minimum copper traces shows ∼0.9 °C/W higher value than larger copper trace case and shows ∼1.5 °C/W higher value than the case that copper trace fully covers PCB top surface, in the case that horizontal PCB size is 50 × 50 mm. After that, two types of test boards with different trace size for of n-channel MOSFET with DPAK package are prepared. Measurements are conducted to know package thermal resistance variation by copper trace size. Transient thermal impedance curve is obtained from measurement result and is converted to a cumulative Rth-Cth curve to know and discuss the difference by copper trace size of these two test boards. The difference is also discussed with and compared to that of simulation results.

Thermal investigations of microelectronic chip with non‐uniform power distribution: temperature prediction and thermal placement design optimization

2004 ◽  
Vol 21 (3) ◽  
pp. 29-43 ◽  
Author(s):  
Teck Joo Goh ◽  
K.N. Seetharamu ◽  
G.A. Quadir ◽  
Z.A. Zainal ◽  
K. Jeevan Ganeshamoorthy
Keyword(s):  
Power Distribution ◽  
Heat Dissipation ◽  
Thermal Analyses ◽  
Convection Heat Transfer ◽  
Multiple Linear Regression Model ◽  
Least Square Method ◽  
Least Square ◽  
Junction Temperature ◽  
Thermal Investigations ◽  
Placement Distance

This paper presents the thermal analyses carried out to predict the temperature distribution of the silicon chip with non‐uniform power dissipation patterns and to determine the optimal locations of power generating sources in silicon chip design layout that leads to the desired junction temperature, Tj. Key thermal parameters investigated are the heat source placement distance, level of heat dissipation, and magnitude of convection heat transfer coefficient. Finite element method (FEM) is used to investigate the effect of the key parameters. From the FEM results, a multiple linear regression model employing the least‐square method is developed that relates all three parameters into a single correlation which would predict the maximum junction temperature, Tj,max.

scholarly journals Thermal Analysis of Heat Distribution in Busbars during Rated Current Flow in Low-Voltage Industrial Switchgear

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2427
Author(s):  
Michał Szulborski ◽  
Sebastian Łapczyński ◽  
Łukasz Kolimas
Keyword(s):  
Structural Changes ◽  
Heat Dissipation ◽  
Current Flow ◽  
Low Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Coupled Analysis ◽  
Precise Representation ◽  
Transient Thermal ◽  
Halogen Free

The manuscript presents advanced coupled analysis: Maxwell 3D, Transient Thermal and Fluent CFD, at the time of a rated current occurring on the main busbars in the low-voltage switchgear. The simulations were procured in order to aid the design process of such enclosures. The analysis presented the rated current flow in the switchgear busbars, which allowed determining their temperature values. The main assumption of the simulation was measurements of temperature rise during rated current conditions. Simulating such conditions is a valuable asset in order to design better solutions for energy distribution gear. The simulation model was a precise representation of the actual prototype of the switchgear. Simulations results were validated by experimental research. The heat dissipation in busbars and switchgear housing through air convection was presented. The temperature distribution for the insulators in the rail bridge made of fireproof material was considered: halogen-free polyester. The results obtained during the simulation allowed for a detailed analysis of switchgear design and proper conclusions in practical and theoretical aspects. That helped in introducing structural changes in the prepared prototype of the switchgear at the design and construction stages. Deep analysis of the simulation results allowed for the development concerning the final prototype of the switchgear, which could be subjected to the full type tests. Additionally, short-circuit current simulations were procured and presented.

scholarly journals Thermal impedance at the interface of contacting bodies: 1-D examples solved by semi-derivatives

2012 ◽  
Vol 16 (2) ◽  
pp. 623-627 ◽  
Author(s):  
Jordan Hristov
Keyword(s):  
Heat Conduction ◽  
Fractional Calculus ◽  
Half Time ◽  
Thermal Impedance ◽  
Entire Domain ◽  
Transient Thermal ◽  
Two Bodies

Simple 1-D semi-infinite heat conduction problems enable to demonstrate the potential of the fractional calculus in determination of transient thermal impedances of two bodies with different initial temperatures contacting at the interface ( x = 0 ) at t = 0 . The approach is purely analytic and uses only semi-derivatives (half-time) and semi-integrals in the Riemann-Liouville sense. The example solved clearly reveals that the fractional calculus is more effective in calculation the thermal resistances than the entire domain solutions.

Thermal Analysis of High Power Light Emitting Diodes Package

2011 ◽  
Vol 687 ◽  
pp. 215-221
Author(s):  
Yuan Yuan Han ◽  
Hong Guo ◽  
Xi Min Zhang ◽  
Fa Zhang Yin ◽  
Ke Chu ◽  
...  
Keyword(s):  
Finite Element Method ◽  
High Power ◽  
Thermal Field ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Convective Heat Exchange ◽  
Input Power ◽  
Junction Temperature ◽  
Original Structure ◽  
Light Emitting

With increasing of the input power of the chips in light emitting diode (LED)， the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000289-000296 ◽  
Author(s):  
James D. Scofield ◽  
J. Neil Merrett ◽  
James Richmond ◽  
Anant Agarwal ◽  
Scott Leslie
Keyword(s):  
Selection Process ◽  
Free Module ◽  
Junction Temperature ◽  
Thermal Impedance ◽  
Power Module ◽  
Package Design ◽  
Module Design ◽  
Reliability Characteristics ◽  
Power Modules ◽  
Environmental Requirement

A custom multi-chip power module packaging was designed to exploit the electrical and thermal performance potential of silicon carbide MOSFETs and JBS diodes. The dual thermo-mechanical package design was based on an aggressive 200°C ambient environmental requirement and 1200 V blocking and 100 A conduction ratings. A novel baseplate-free module design minimizes thermal impedance and the associated device junction temperature rise. In addition, the design incorporates a free-floating substrate configuration to minimize thermal expansion coefficient induced stresses between the substrate and case. Details of the module design and materials selection process will be discussed in addition to highlighting deficiencies in current packaging materials technologies when attempting to achieve high thermal cycle life reliability over an extended temperature range.

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