Pulse duration and energy density influence on laser processing of metals with short and ultrashort pulses

Author(s):  
Ronan Le Harzic ◽  
Detlef Breitling ◽  
S. Sommer ◽  
Christian Fohl ◽  
S. Valette ◽  
...  
1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.


MRS Bulletin ◽  
1996 ◽  
Vol 21 (8) ◽  
pp. 58-62 ◽  
Author(s):  
Harold A. Davis ◽  
Gennady E. Remnev ◽  
Regan W. Stinnett ◽  
Kiyoshi Yatsui

Over the past decade, researchers in Japan, Russia, and the United States have been investigating the application of intense-pulsed-ion-beam (IPIB) technology (which has roots in inertial confinement fusion programs) to the surface treatment and coating of materials. The short range (0.1–10 μm) and high-energy density (1–50 J/cm2) of these short-pulsed (t ≥ 1 μs) beams (with ion currents I = 5–50 kA, and energies E = 100–1,000 keV) make them ideal flash-heat sources to rapidly vaporize or melt the near-surface layer of targets similar to the more familiar pulsed laser deposition (PLD) or laser surface treatment. The vaporized material can form coatings on substrates, and surface melting followed by rapid cooling (109 K/s) can form amorphous layers, dissolve precipitates, and form nonequilibrium microstructures.An advantage of this approach over laser processing is that these beams deliver 0.1–10 KJ per pulse to targets at expected overall electrical efficiencies (i.e., the ratio of extracted ion-beam energy to the total energy consumed in generating the beam) of 15–40% (compared to < 1% for the excimer lasers often used for similar applications). Consequently IPIB hardware can be compact and require relatively low capital investment. This opens the promise of environmentally conscious, low-cost, high-throughput manufacturing. Further, efficient beam transport to the target and excellent coupling of incident ion energy to targets are achieved, as opposed to lasers that may have limited coupling to reflective materials or produce reflecting plasmas at high incident fluence. The ion range is adjustable through selection of the ion species and kinetic energy, and the beam energy density can be tailored through control of the beam footprint at the target to melt (1–10 J/cm2) or to vaporize (10–50 J/cm2) the target surface. Beam pulse durations are short (≥ 1 μs) to minimize thermal conduction. Some disadvantages of IPIB processing over laser processing include the need to form and propagate the beams in vacuum, and the need for shielding of x-rays produced by relatively low-level electron current present in IPIB accelerators. Also these beams cannot be as tightly focused onto targets as lasers, making them unsuitable for applications requiring treatment on small spatial scales.


2000 ◽  
Author(s):  
J. Sun ◽  
J. P. Longtin ◽  
P. M. Norris

Abstract Silica aerogels are unique nanostructured materials that possess many distinctive qualities, including extremely low densities and thermal conductivities, very high surface-area-to-volume ratios, and large strength-to-weight ratios. Aerogels, however, are very brittle, and are not readily shaped using traditional machining operations. Ultrafast laser processing may provide an alternative for precision shaping and machining of these materials. This paper discusses investigations of ultrafast laser machining of aerogels for material removal and micromachining. The advantages of ultrafast laser processing include a minimal thermal penetration region and low processing temperatures, precision removal of material, and good-quality feature definition. In this work, an amplified femtosecond Ti:sapphire laser system is used to investigate the breakdown threshold, material removal rate, and specific issues associated with laser processing of aerogels, as well as recommendations for further investigations for these unique materials.


2015 ◽  
Vol 1084 ◽  
pp. 30-33
Author(s):  
Polina A. Beloglazova ◽  
Ivan P. Chernov ◽  
Yuriy P. Cherdantsev ◽  
Natalia Pushilina

We have researched the influence of the carbon pulse ion beam on samples of technical titanium VT1-0. The beam energy was 200 kV; the pulse duration, 80 ns; the energy density, 1.92 J/cm2. It was established that the 1.8 µm deep modified layer with high hardness and low rate of hydrogen sorption in the bulk of material was formed during the exposure to the carbon pulse ion beam.


1992 ◽  
Vol 7 (4) ◽  
pp. 1004-1010 ◽  
Author(s):  
M.J. Godbole ◽  
A.J. Pedraza ◽  
D.H. Lowndes ◽  
J.R. Thompson

The effect of the interfacial thermal resistance and the laser energy density on film morphology and the extent of evaporation was studied in the excimer laser processing of copper-sapphire couples. Copper films of 80 nm thickness were sputter-deposited on sapphire substrates and laser-irradiated with energy densities in the range of 0.2 to 3.5 J/cm2. The changes in film morphology and thickness as a function of laser energy density were analyzed by energy dispersive x-ray spectroscopy. Four regimes can be established as a function of the laser energy density. First, for low energy densities up to a critical value, the film is partially removed by thermal stresses. Second, as the energy density is increased above that critical value, larger portions of the film remain attached to the substrate. In this regime adhesion enhancement takes place. Third, a further increase in the energy density results in film evaporation. Finally, the decrease in the specific mass removal rate of copper is related to the formation of a laser generated plasma that shields the sample from the incoming radiation. In this last regime, an intermediate compound may form at the substrate surface. The data were correlated with results from a computer model of the heat flow during laser processing of metal-ceramic couples.


2014 ◽  
Vol 53 (5) ◽  
pp. 051512 ◽  
Author(s):  
Mingying Sun ◽  
Urs Eppelt ◽  
Wolfgang Schulz ◽  
Jianqiang Zhu

2001 ◽  
Vol 685 ◽  
Author(s):  
E. Fogarassy ◽  
B. Prévot ◽  
S. de Unamuno ◽  
C. Prat ◽  
D. Zahorski ◽  
...  

AbstractIn this work, was investigated both numerically and experimentally, the excimer laser processing of a-Si films deposited on SiO2-coated glass substrates, using the very large area (∼ 20 cm2) and long pulse duration (200 ns) excimer source from SOPRA Company. Experiments were carried out in air or in neutral atmosphere, using both the single- and multi-shot mode. From the microstructural analysis of the laser irradiated area the formation of a large-grained material through the so-called SLG regime was evidenced. In addition, the application of a multi-shot process was demonstrated to be very efficient to prepare uniform polysilicon layers with enlarged grain sizes (up to 1.5 µm after 20 shots). Finally, poly-Si TFTs prepared in the optimized conditions (multi-shot, neutral ambience) exibited field effect mobilities up to 235 cm2/V.s (for N-type) and 84 cm2/V.s (for P-type), with fairly uniform device characteristics over large area and excellent stability under electrical stress.


Sign in / Sign up

Export Citation Format

Share Document