Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes

2019 ◽  
Vol 53 (9) ◽  
pp. 1272-1277 ◽  
Author(s):  
A. V. Ikonnikov ◽  
V. I. Chernichkin ◽  
V. S. Dudin ◽  
D. A. Akopian ◽  
A. N. Akimov ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Temperature Changes ◽  
Impurity Photoconductivity

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature

2019 ◽  
Vol 53 (9) ◽  
pp. 1266-1271
Author(s):  
T. A. Uaman Svetikova ◽  
A. V. Ikonnikov ◽  
V. V. Rumyantsev ◽  
D. V. Kozlov ◽  
V. I. Chernichkin ◽  
...  
Keyword(s):  
Epitaxial Films ◽  
Impurity Photoconductivity

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Cryo-TEM of amphiphilic polymer and amphiphile/polymer solutions

1993 ◽  
Vol 51 ◽  
pp. 876-877
Author(s):  
Yeshayahu Talmon
Keyword(s):  
Microstructural Characterization ◽  
Building Blocks ◽  
Quantitative Information ◽  
Physical Models ◽  
Specimen Preparation ◽  
Time Resolved ◽  
Temperature Changes ◽  
Temperature And Humidity ◽  
Microstructured Fluids ◽  
Air Streams

To achieve complete microstructural characterization of self-aggregating systems, one needs direct images in addition to quantitative information from non-imaging, e.g., scattering or Theological measurements, techniques. Cryo-TEM enables us to image fluid microstructures at better than one nanometer resolution, with minimal specimen preparation artifacts. Direct images are used to determine the “building blocks” of the fluid microstructure; these are used to build reliable physical models with which quantitative information from techniques such as small-angle x-ray or neutron scattering can be analyzed.To prepare vitrified specimens of microstructured fluids, we have developed the Controlled Environment Vitrification System (CEVS), that enables us to prepare samples under controlled temperature and humidity conditions, thus minimizing microstructural rearrangement due to volatile evaporation or temperature changes. The CEVS may be used to trigger on-the-grid processes to induce formation of new phases, or to study intermediate, transient structures during change of phase (“time-resolved cryo-TEM”). Recently we have developed a new CEVS, where temperature and humidity are controlled by continuous flow of a mixture of humidified and dry air streams.

Application of pyrometer and standard sample to determine surface temperature of studied materials

2019 ◽  
pp. 9-13
Author(s):  
V.Ya. Mendeleyev ◽  
V.A. Petrov ◽  
A.V. Yashin ◽  
A.I. Vangonen ◽  
O.K. Taganov
Keyword(s):  
Composite Material ◽  
Surface Temperature ◽  
Relative Error ◽  
Wavelength Range ◽  
Standard Sample ◽  
A Priori ◽  
Temperature Changes ◽  
Surface Temperatures ◽  
Relative Errors ◽  
Normal Emissivity

Determining the surface temperature of materials with unknown emissivity is studied. A method for determining the surface temperature using a standard sample of average spectral normal emissivity in the wavelength range of 1,65–1,80 μm and an industrially produced Metis M322 pyrometer operating in the same wavelength range. The surface temperature of studied samples of the composite material and platinum was determined experimentally from the temperature of a standard sample located on the studied surfaces. The relative error in determining the surface temperature of the studied materials, introduced by the proposed method, was calculated taking into account the temperatures of the platinum and the composite material, determined from the temperature of the standard sample located on the studied surfaces, and from the temperature of the studied surfaces in the absence of the standard sample. The relative errors thus obtained did not exceed 1,7 % for the composite material and 0,5% for the platinum at surface temperatures of about 973 K. It was also found that: the inaccuracy of a priori data on the emissivity of the standard sample in the range (–0,01; 0,01) relative to the average emissivity increases the relative error in determining the temperature of the composite material by 0,68 %, and the installation of a standard sample on the studied materials leads to temperature changes on the periphery of the surface not exceeding 0,47 % for composite material and 0,05 % for platinum.

Measuring Facial Skin Temperature Changes Caused by Mental Work-Load with Infrared Thermography

2016 ◽  
Vol 136 (11) ◽  
pp. 1581-1585 ◽  
Author(s):  
Tota Mizuno ◽  
Takeru Sakai ◽  
Shunsuke Kawazura ◽  
Hirotoshi Asano ◽  
Kota Akehi ◽  
...  
Keyword(s):  
Skin Temperature ◽  
Infrared Thermography ◽  
Work Load ◽  
Facial Skin ◽  
Mental Work ◽  
Temperature Changes ◽  
Mental Work Load

In-depth Analysis of the Impurities in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
A. P. Kovarsky ◽  
V. S. Strykanov
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dynamic Range ◽  
Detection Limits ◽  
Background Level ◽  
Epitaxial Films ◽  
Depth Analysis ◽  
Lower Detection ◽  
Minimum Detection Level ◽  
Ion Yields ◽  
Secondary Ion

GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry (SIMS). Standard implanted samples were used to determine the appropriate analytical conditions for analysis of impurities. The dose and energy of implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen so the maximum impurity concentration was not more than 1020 atoms/cm3. The optimum analysis conditions were ascertained from the standards for each element, and the detection limits were deduced from the background levels of the implantation profiles. We demonstate that lower detection limits of 1015 atoms/cm3 with a dynamic range 103 − 105 are possible. Zn and Cd have low ion yields, so the minimum detection level for these elements is the background level of the detector. The detection limits of the other elements are determined by the contamination of an initial GaN matrix.

TEMPERATURE CHANGES FOR METHANE HYDRATE DISSOCIATION IN DIFFERENT CLASS DEPOSITS BY DEPRESSURIZATION

2018 ◽  
Author(s):  
Mingjun Yang ◽  
Yi Gao ◽  
Hang Zhou ◽  
Bingbing Chen ◽  
Yongchen Song
Keyword(s):  
Methane Hydrate ◽  
Hydrate Dissociation ◽  
Temperature Changes
Sign in / Sign up

Export Citation Format

Share Document