SMALL-SCALE InGaP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED AND LOW-POWER INTEGRATED-CIRCUIT APPLICATIONS

Small-scale InGaP/GaAs heterojunction bipolar transistors (HBTs) with high-speed as well as low-current operation are demonstrated. To reduce the emitter size SE and the base-collector capacitance CBC simultaneously, the HBTs are fabricated by using WSi/Ti as the base electrode and by burying SiO 2 in the extrinsic collector region. WSi/Ti metals simplify and facilitate processing to fabricate small base electrodes, and the buried SiO 2 reduces the parasitic CBC under the base electrode. The cutoff frequency fT of 156 GHz and the maximum oscillation frequency f max of 255 GHz were obtained at a collector current Ic of 3.5 mA for the HBT with SE of 0.5 μ m ×4.5 μ m , and fT of 114 GHz and f max of 230 GHz were obtained at IC of 0.9 mA for the HBT with SE of 0.25 μ m ×1.5 μ m . A 1/8 static frequency divider operated at a maximum toggle frequency of 39.5 GHz with a power consumption per flip-flop of 190 mW. A transimpedance amplifier provides a gain of 46.5 dB·Ω with a bandwidth of 41.6 GHz at a power consumption of 150 mW. These results indicate the great potential of our HBTs for high-speed. low power integrated circuit applications.

Download Full-text

TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

Download Full-text

High-speed and low-power InAlAs/InGaAs heterojunction bipolar transistors for dense ultra high speed digital applications

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979631 ◽

2002 ◽

Cited By ~ 6

Author(s):

A. Sokolich ◽

S. Thomas ◽

C.H. Fields

Keyword(s):

Low Power ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

Ultra High Speed

Download Full-text

Ultra-high speed, low power monolithic photoreceiver using InP/InGaAs double-heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:19970672 ◽

1997 ◽

Vol 33 (12) ◽

pp. 1047 ◽

Cited By ~ 23

Author(s):

E. Sano ◽

K. Sano ◽

T. Otsuji ◽

K. Kurishima ◽

S. Yamahata

Keyword(s):

Low Power ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Bipolar Transistors ◽

Ultra High Speed ◽

Double Heterojunction

Download Full-text

ULTRAHIGH fmax AlInAs/GaInAs TRANSFERRED-SUBSTRATE HETEROJUNCTION BIPOLAR TRANSISTORS FOR INTEGRATED CIRCUITS APPLICATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156498000270 ◽

1998 ◽

Vol 09 (02) ◽

pp. 643-670 ◽

Cited By ~ 3

Author(s):

BIPUL AGARWAL ◽

RAJASEKHAR PULLELA ◽

UDDALAK BHATTACHARYA ◽

DINO MENSA ◽

QING-HUNG LEE ◽

...

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Bipolar Transistors ◽

Fabrication Process ◽

Material System ◽

Rf Performance ◽

Consequent Increase ◽

Very High

Transferred-substrate heterojunction bipolar transistors (HBTs) have demonstrated very high bandwidths and are potential candidates for very high speed integrated circuit (IC) applications. The transferred-substrate process permits fabrication of narrow and aligned emitter-base and collector-base junctions, reducing the collector-base capacitance and increasing the device f max . Unlike conventional double-mesa HBTs, transferred-substrate HBTs can be scaled to submicron dimensions with a consequent increase in bandwidth. This paper introduces the concept of transferred-substrate HBTs. Fabrication process in the AlInAs/GaInAs material system is presented, followed by DC and RF performance. A demonstration IC is shown along with some integrated circuits in development.

Download Full-text