FRACTURE CHARACTERISTICS OF DLC ON SILICON USING NANO-INDENTATION AND FEA

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4213-4218 ◽  
Author(s):  
SEUNG BAEK ◽  
CHANG-SUNG SEOK
Keyword(s):  
Fracture Toughness ◽  
Finite Element ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Diamond Like Carbon ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Indentation Tests ◽  
Micro Indentation

In this study, using the nano and micro-indentation tests and finite element analysis (FEA), we investigated the fracture behaviors of diamond like carbon (DLC) on silicon in indentation state. Diamond like carbon coating of 3μm and 1.5μm thickness were deposited on polished (100) single crystal silicon substrates by radio frequency plasma assisted chemical vapor deposition (RF-PACVD), respectively. Fracture toughness of DLC films was calculated from the measured lengths of the cracks formed by nano and micro-indentation on each sample. We used various equations such as Lawn's and Liang's equation to calculate the fracture toughness. The effective fracture toughnesses of these DLC films were 1.2 ~1.3 MPam 0.5, calculated by Lawn's and Liang's equations. The true fracture toughness of DLC on silicon, excluding the portion of fracture toughness due to a substrate, was determined to be 4.0~5.1 MPam 0.5. DLC films with crack initiation and propagation were analyzed by finite element method.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

ELASTO-PLASTIC PROPERTIES OF Mo-MODIFIED Ti DEDUCED FROM INDENTATION TESTS AND FINITE ELEMENT ANALYSIS

2019 ◽  
Vol 26 (07) ◽  
pp. 1850225
Author(s):  
YONG MA ◽  
ZHAO YANG ◽  
SHENGWANG YU ◽  
BING ZHOU ◽  
HONGJUN HEI ◽  
...  
Keyword(s):  
Finite Element ◽  
Surface Treatment ◽  
Load Capacity ◽  
Indentation Test ◽  
Element Analysis ◽  
Plastic Properties ◽  
Polynomial Expression ◽  
Indentation Tests ◽  
Graded Material ◽  
Micro Indentation

The aim of this paper is to establish an approach to quantitatively determine the elasto-plastic parameters of the Mo-modified Ti obtained by the plasma surface alloying technique. A micro-indentation test is conducted on the surface under 10[Formula: see text]N. Considering size effects, nanoindentation tests are conducted on the cross-section with two loads of 6 and 8[Formula: see text]mN. Assuming nanoindentation testing sublayers are homogeneous, finite element reverse analysis is adopted to determine their plastic parameters. According to the gradient distributions of the elasto-plastic parameters with depth in the Mo-modified Ti, two types of mathematical expressions are proposed. Compared with the polynomial expression, the linear simplified expression does not need the graded material to be sectioned and has practical utility in the surface treatment industry. The validation of the linear simplified expression is verified by the micro-indentation test and corresponding finite element forward analysis. This approach can assist in improving the surface treatment process of the Mo-modified Ti and further enhancing its load capacity and wear resistance.

A Study on the Nanoindentation Behaviour of Single Crystal Silicon Using Hybrid MD-FE Method

2008 ◽  
Vol 32 ◽  
pp. 259-262 ◽  
Author(s):  
Akbar Afaghi Khatibi ◽  
Bohayra Mortazavi
Keyword(s):  
Molecular Dynamics ◽  
Finite Element ◽  
Single Crystal ◽  
Material Properties ◽  
Single Crystal Silicon ◽  
Dynamics Simulation ◽  
Fe Method ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Nano Scale

Developing new techniques for the prediction of materials behaviors in nano-scales has been an attractive and challenging area for many researches. Molecular Dynamics (MD) is the popular method that is usually used to simulate the behavior of nano-scale material. Considering high computational costs of MD, however, has made this technique inapplicable as well as inflexible in various situations. To overcome these difficulties, alternative procedures are thought. Considering its capabilities, Finite Element Analysis (FEA) seems to be the most appropriate substitute for MD simulations in most cases. But since the material properties in nano, micro, and macro scales are different, therefore to use FEA methods in nano-scale modeling one must use material properties appropriate to that scale. To this end, a previously developed Hybrid Molecular Dynamics-Finite Element (HMDFE) approach was used to investigate the nanoindentation behavior of single crystal silicon with Berkovich indenter. In this study, a FEA model was developed based on the material properties extracted from molecular dynamics simulation of uniaxial tension test on single crystal Silicon. Eventually, by comparison of FEA results with experimental data, the validity of this new technique for the prediction of nanoindentation behavior of Silicon was concluded.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

Heteroepitaxial Si-ZrO2-Si by MOCVD

1993 ◽  
Vol 335 ◽  
Author(s):  
Anton C. Greenwald ◽  
Nader M. Kalkhoran ◽  
Fereydoon Namavar ◽  
Alain E. Kaloyeros ◽  
Ioannis Stathakos
Keyword(s):  
Gas Flow ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Cubic Phase ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Crystal Silicon ◽  
Flow Rates ◽  
Substrate Temperatures ◽  
Source Materials

AbstractThe objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapor deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the <100> and <111> orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

scholarly journals Модификация соотношения sp^2/sp^3-гибридного углерода в PECVD пленках DLC

2020 ◽  
Vol 54 (9) ◽  
pp. 855
Author(s):  
П.А. Юнин ◽  
А.И. Охапкин ◽  
М.Н. Дроздов ◽  
С.А. Королев ◽  
Е.А. Архипова ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Diamond Like Carbon ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
In Situ Methods

Abstract It is known that diamond-like carbon layers consist of carbon components with sp ^2 (graphite) and sp ^3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp ^2 and sp ^3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp ^2- and sp ^3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp ^3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

A Current Conduction Mechanism in Laser Recrystallized Silicon Metal-Oxide-Semiconductor Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
Han-Sheng Lee
Keyword(s):  
Conduction Mechanism ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Oxide Semiconductor ◽  
Silicon Substrates ◽  
Mos Transistors ◽  
Crystal Silicon ◽  
Ion Laser ◽  
Argon Ion ◽  
A Current

ABSTRACTN-channel MOS transistors were fabricated on silicon films that had been recrystallized by an argon ion laser at different power levels. These transistors showed electrical characteristics similar, but somewhat inferior to those devices fabricated on single crystal silicon substrates. These differences are attributed to the presence of trapping states at the grain boundaries of the crystallites in the recrystallized silicon. A coulombic scattering model is presented to explain these differences. In the case of films annealed at low laser power, an additional factor of nonuniform trap state distribution is invoked to explain device characteristics. This model provides an adequate explanation for the observed transport properties of transistors fabricated from recrystallized silicon films.

The Effects of Warm Pre-Stressing of a Pre-Cracked Pressurised Thermal Shock Disk Specimen Under a LUCF Loading Cycle

2011 ◽  
Author(s):  
H. Teng ◽  
D. W. Beardsmore ◽  
J. K. Sharples ◽  
P. J. Budden
Keyword(s):  
Fracture Toughness ◽  
Finite Element ◽  
Thermal Shock ◽  
Local Stress ◽  
Superposition Method ◽  
Element Analysis ◽  
Loading Cycle ◽  
Finite Element Software ◽  
Disk Specimen ◽  
Apparent Fracture Toughness

A finite element analysis has been performed to investigate the effects of warm prestressing of a pre-cracked PTS-D (Pressurized Thermal Shock Disk) specimen, for comparison with the experimental work conducted by the Belgium SCK-CEN organisation under the European NESC VII project. The specimen was loaded to a maximum loading at −50 °C, unloaded at the same temperature, cooled down to −150 °C, and then re-loaded to fracture at −150 °C. This is a loading cycle known as a LUCF cycle. The temperature-dependant tensile stress-strain data was used in the model and the finite element software ABAQUS was used in the analysis. The finite element results were used to derive the apparent fracture toughness by three different methods: (1) Chell’s displacement superposition method; (2) the local stress matching method; and (3) Wallin’s empirical formula. The apparent fracture toughness values were derived at the deepest point of the semi-elliptical crack for a 5% un-prestressed fracture toughness of 43.96 MPam1/2 at −150 °C. The detailed results were presented in the paper.

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