THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1835-1840 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the d.c. magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal face. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of (100) face changed from 1256(on 0V) to 580(on -150V), but the intensity of (110) face changed from 614(on 0V) to 486(on -150V). The rel. int(100%) of (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decreased was not obviously. The maximum and minimum of the deposition ratio were 17.53nm and 13.75nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50nm. The maximal roughness of the films decreased firstly and increased afterward, and it got the maximum on the -50V bias-voltage.

THE INFLUENCE OF SPUTTERING BIAS-VOLTAGE ON LaB6 FILM'S CHARACTERISTICS

2009 ◽  
Vol 23 (08) ◽  
pp. 1077-1083 ◽  
Author(s):  
JING XU ◽  
GUANGHUI MIN ◽  
XIAOHUA ZHAO ◽  
LIJIE HU ◽  
HUASHUN YU
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Diffraction Peak ◽  
Dc Magnetron Sputtering ◽  
Crystal Face ◽  
Deposited Films ◽  
Stylus Profiler ◽  
Lanthanum Boride

The deposition of lanthanum boride ( LaB 6) thin films by the DC magnetron sputtering were studied. XRD, AFM and Stylus Profiler were used to characterize the properties of the deposited films. The XRD was used to study the crystallinity. The results of the XRD showed that the dominant crystal face is the (100) face. The crystallinity decreased with the increased bias-voltage value, but the influence of bias-voltage on the films is different on different crystal faces. The intensity (100) face was influenced by the bias-voltage more obviously than other faces except the influence of thickness. The diffraction peak maximal intensity of the (100) face changed from 1256 (on 0 V) to 580 (on -150 V), but the intensity of (110) face changed from 614 (on 0 V) to 486 (on -150 V). The rel. int (100%) of the (110) face changed from 38.70 to 74.52. The deposition rate decreased with the increased bias-voltage value, but the decrease was not obvious. The maximum and minimum of the deposition ratio were 17.53 nm and 13.75 nm respectively. Surface morphology of the films was studied by the AFM. The crystallite of the films was less than 50 nm. The maximal roughness of the films decreased first and increased afterward, and the maximum was obtained on the -50 V bias-voltage.

scholarly journals A study of properties of ZrO2 thin films deposited by magnetron sputtering under different plasma parameters: Biomedical application

2019 ◽  
Vol 70 (7) ◽  
pp. 117-121 ◽  
Author(s):  
Hind Zegtouf ◽  
Nadia Saoula ◽  
Mourad Azibi ◽  
Larbi Bait ◽  
Noureddine Madaoui ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Biomedical Application ◽  
Steel Substrate ◽  
Substrate Bias ◽  
X Rays ◽  
Plasma Parameters ◽  
Substrate Bias Voltage ◽  
Deposited Films

Abstract ZrO2 thin films were deposited on 316L stainless steel substrate by a radio-frequency magnetron sputtering system. The substrate bias voltage, the working gas rate and the reactive gas fraction in the gas mixture were varied. These variations produce a variation in the deferent properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, nano-indentation and potentiodynamic polarization. The experimental results show that the film thickness and the roughness of the films are highly influenced by the plasma parameters. XRD results show that the monoclinic phase is predominant in unbiased deposited films. The best anti-corrosion performance and hardness were obtained for ZrO2 deposited with a substrate bias voltage of −75 V, Ar rate of 6 sccm and oxygen fraction of 25%.

The Influence of Sputtering Argon Pressure on LaB6 Films Characetristics

2011 ◽  
Vol 287-290 ◽  
pp. 2244-2247
Author(s):  
Jing Xu ◽  
Guang Hui Min ◽  
Hua Shun Yu ◽  
Jing Li
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Vacuum Chamber ◽  
Lanthanum Hexaboride ◽  
Argon Pressure ◽  
Crystal Face ◽  
Deposited Films ◽  
Smooth Density

Lanthanum hexaboride films were deposited on SiO2 substrates in a vacuum chamber by D.C. magnetron sputtering from Lanthanum hexaboride pellet target. The films deposited with the same parameters besides the argon pressure. XRD, AFM and style profiler were used to characterize the properties of the deposited films. Surface of the films was compactive and smooth. Density of the film increased with the argon pressure. Roughness of the films decreased firstly and increased after with increasing of the argon pressure. Structure of the films was studied by the XRD. Results of the XRD showed that the dominant crystal face was (100) face. The crystallinity decreased with the increased argon pressure. Deposition rate of the film increased first and decreased last, and the value was lager than other at the argon pressure of 1.5Pa.

Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

2015 ◽  
Vol 574 ◽  
pp. 71-77 ◽  
Author(s):  
A.Y. Chen ◽  
Y. Bu ◽  
Y.T. Tang ◽  
Y. Wang ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Rate Dependence ◽  
Orientation Growth

Transparent Conductive Cu-In-O Thin Films Deposited by Reactive DC Magnetron Sputtering with Different Targets

2011 ◽  
Vol 239-242 ◽  
pp. 2752-2755
Author(s):  
Fan Ye ◽  
Xing Min Cai ◽  
Fu Ping Dai ◽  
Dong Ping Zhang ◽  
Ping Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Diffraction Peak ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
Equal Distance ◽  
Transmittance Curve

Transparent conductive Cu-In-O thin films were deposited by reactive DC magnetron sputtering. Two types of targets were used. The first was In target covered with a fan-shaped Cu plate of the same radius and the second was Cu target on which six In grains of 1.5mm was placed with equal distance between each other. The samples were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV/VIS spectrophotometer, four-probe measurement etc. SEM shows that the surfaces of all the samples are very smooth. EDX shows that the samples contain Cu, In as well as O, and different targets result in different atomic ratios of Cu to In. A diffraction peak related to rhombohedra-centered In2O3(012) is observed in the XRD spectra of all the samples. For both the two targets, the transmittance decreases with the increase of O2flow rates. The direct optical band gap of all the samples is also estimated according to the transmittance curve. For both the two targets, different O2flow rates result in different sheet resistances and conductivities. The target of Cu on In shows more controllability in the composition and properties of Cu-In-O films.

Processing and Characterization of Amorphous Copper Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2018 ◽  
Vol 775 ◽  
pp. 238-245 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Localized States ◽  
Positive Sign ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Deposited Films

In this paper, copper oxide (CuOx) thin films with amorphous phase were prepared on glass substrates by reactive dc magnetron sputtering. The influence of the flow rate of O2 on the structural, optical and electrical properties of the as-deposited films was systematically studied. XRD revealed that the as-deposited films remained amorphous in the whole range of adjusted oxygen flow rate. Surface morphology and nanoparticle size of the films were observed by AFM. Electrical resistivity and Hall effect measurements were performed on the films with van der Pauw configuration. The positive sign of the Hall coefficient confirmed the p-type conductivity in all studied films. From temperature-dependent electrical conductivity of the films prepared at R(O2) of 1.5 sccm, it was show that three types of behavior can be expected, nearest-neighbor hopping at high temperature range (200-300 K), the Mott variable range hopping at low temperature (110-190 K) and Efros-Shklovskii variable range hopping at very low temperature (65-100 K). Some important parameters corresponding to Mott-VRH and ES-VRH like density of localized states near the Fermi level, localization length, degree of disorder, hopping distance and hopping energy were determined. These parameters would be helpful for optimizing the performance of photovoltaic applications.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Effects of Continuous and Discontinuous Deposition Time in Reactive Direct Current Magnetron Sputtering of Titanium Dioxide Thin Films

2015 ◽  
Vol 1131 ◽  
pp. 251-254
Author(s):  
Montri Aiempanakit ◽  
Chantana Salawan ◽  
Kamon Aiempanakit
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Deposition Time ◽  
Spherical Shape ◽  
Contact Angles ◽  
Water Contact ◽  
Direct Current Magnetron Sputtering

The effect of continuous and discontinuous deposition time on the properties of TiO2 thin films deposited by reactive direct current magnetron sputtering (DCMS) on glass substrates was investigated. The deposition processes were designed for a condition of continuous deposition time D1 (60 min) and three conditions of discontinuous deposition time D2 (30 min × 2 times), D3 (15 min × 4 times), and D4 (1 min × 60 times). The crystal structure, surface morphology, and hydrophilicity of TiO2 thin films were characterized by X-ray diffraction, atomic force microscope, and water contact angle method, respectively. It was found that the increasing of discontinuous deposition time (conditions from D1 to D4) shows the changing of grain size from big grain size with spherical shape to small grain size with oval shape. The crystallinity of TiO2 films decrease with increasing the discontinuous deposition time. The water contact angles also decrease as a function of increasing discontinuous deposition time. These results may be explained from the accumulation of heat on the substrate which affected the phase composition and surface morphology of TiO2 thin films.

Characteristics of CZTSSe Thin Films Prepared by Selenization of Sputtered Cu, Sn and ZnS Layers

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940040 ◽  
Author(s):  
N. Akcay ◽  
S. Ozcelik ◽  
E. Zaretskaya ◽  
R. Juskenas
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Sem Study ◽  
Packed Structure

We reported the growth of CZTSSe thin films on Mo-coated SLG substrates by the two-step approach which includes the deposition of precursor films by the magnetron sputtering method at room temperature followed by selenization of the precursor films at 560∘C. Formation of CZTSSe films with the kesterite structure was confirmed by XRD and Raman spectroscopy analyses. The films are slightly Cu-rich and Zn-deficient. SEM study shown that the films have uniform surface morphology and densely packed structure without any voids and cracks.

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