Investigation of electrical properties of peald-deposited Ti/Al2O3/Al/Si MIM capacitors

2021 ◽  
pp. 2140045
Author(s):  
Sumit Patil ◽  
Viral Barhate ◽  
Ashok Mahajan ◽  
Haoyu Xu ◽  
Mohammad Rasadujjaman ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Current Voltage ◽  
Different Temperatures ◽  
Mim Capacitors

MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.

scholarly journals Effect of Cadmium Concentration on Structural, Optical, and Electrical Properties of Cu2Zn1−xCdxSnS4Quinternary Alloy Nanofibres, Synthesized by Electrospinning Technique

2016 ◽  
Vol 2016 ◽  
pp. 1-11 ◽  
Author(s):  
A. S. Ibraheam ◽  
Y. Al-Douri ◽  
Nabeel Z. Al-Hazeem ◽  
U. Hashim ◽  
Deo Prakash ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Power Conversion ◽  
Cadmium Concentration ◽  
X Ray Diffraction ◽  
Electrospinning Technique ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Uv Visible

The Cu2Zn1−xCdxSnS4quinternary alloy nanofibres with different Cd concentrations were grown on glass substrate using the electrospinning technique. The structural properties of Cu2Zn1−xCdxSnS4quinternary alloy nanofibres were investigated by X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). Optical properties were analysed through UV-visible spectrophotometry (UV-Vis) and photoluminescence (PL) spectroscopy, which revealed that there is a decrease in band gap from 1.75 eV to 1.61 eV, with the increasing Cd concentration fromx= 0 tox= 1. The current-voltage measurements exhibited a power conversion efficiency of 3% under the solar illumination with intensity of 100 mW/cm2. Electrical properties supported that the Cu2Zn1−xCdxSnS4quinternary alloy can be used as an absorber in solar cells. The bulk modulus, refractive index, and dielectric constant were also investigated.

scholarly journals Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM

Metals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1350
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Surface Characteristics ◽  
Atomic Layer ◽  
Resistive Random Access Memory ◽  
Hfo2 Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Current Voltage

In this work, we investigate the resistive switching behaviors of HfO2-based resistive random-access memory (RRAM) in two different oxidants (H2O and O3) in an atomic layer deposition system. Firstly, the surface characteristics of the Ni/HfO2/Si stack are conducted by atomic force microscopy (AFM). A similar thickness is confirmed by scanning electron microscope (SEM) imaging. The surface roughness of the HfO2 film by O3 (O3 sample) is smoother than in the sample by H2O (H2O sample). Next, we conduct electrical characteristics by current–voltage (I–V) and capacitor–voltage (C–V) curves in an initial process. The forming voltage of the H2O sample is smaller than that of the O3 sample because the H2O sample incorporates a lot of H+ in the film. Additionally, the smaller capacitor value of the H2O sample is obtained due to the higher interface trap in H2O sample. Finally, we compare the resistive switching behaviors of both samples by DC sweep. The H2O sample has more increased endurance, with a smaller on/off ratio than the O3 sample. Both have good non-volatile properties, which is verified by the retention test.

Electrochemical Atomic-Layer Epitaxy: Electrodeposition of III-V and II-VI Compound Semiconductors

1999 ◽  
Vol 581 ◽  
Author(s):  
Travis L. Wade ◽  
Billy H. Flowers ◽  
Raman Vaidyanathan ◽  
Kenneth Mathe ◽  
Clinton B. Maddox ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Infrared Reflection ◽  
Epitaxial Deposition ◽  
Electrochemical Atomic Layer Epitaxy

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

scholarly journals PEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor

2017 ◽  
Vol 51 (1) ◽  
pp. 133
Author(s):  
Anil G. Khairnar ◽  
Vilas S. Patil ◽  
K.S. Agrawal ◽  
Prerna A. Pandit ◽  
Rahul S. Salunke ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
High Mobility ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
High K

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125

GaZnO as a Transparent Electrode to Silicon Carbide

2012 ◽  
Vol 717-720 ◽  
pp. 849-852
Author(s):  
Jung Ho Lee ◽  
Ji Hong Kim ◽  
Kang Min Do ◽  
Byung Moo Moon ◽  
Sung Jae Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Hall Effect Measurement ◽  
Transparent Electrode ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structural And Electrical Properties ◽  
Substrate Temperature Increase ◽  
Substrate Temperatures

The characteristics of Ga-doped zinc oxide (GaZnO) thin films deposited at different substrate temperatures (TS~250 to 550oC) on 4H-SiC have been investigated. Structural and electrical properties of GaZnO thin film on n-type 4H-SiC (100)were investigated by using x-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, and Auger electron spectroscopy (AES). Hall mobility is found to increase as the substrate temperature increase from 250 to 550 oC, whereas the lowest resistivity (~3.3 x 10-4 Ωcm) and highest carrier concentration (~1.33x1021cm-3) values are observed for the GaZnO films deposited at 400 oC. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ Introduction ions may affect the electrical properties of GaZnO films on SiC.

Epitaxial growth of PbTiO3 thin films on (001) SrTiO3 from solution precursors

1995 ◽  
Vol 10 (3) ◽  
pp. 680-691 ◽  
Author(s):  
Andreas Seifert ◽  
Fred F. Lange ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
Amorphous Precursor ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Heat Treated ◽  
Film Substrate

A mixed alkoxide liquid precursor was used to form epitaxial PbTiO3 thin films by spin-coating on cubic (001) SrTiO3 substrates. The films were heat-treated at temperatures between 380 °C/1 h and 800 °C/1 h. X-ray diffraction, atomic force microscopy, scanning and transmission electron microscopy were used to characterize the microstructure of the films and to evaluate the epitaxial phenomena. At ∼400 °C/1 h, a polycrystalline, metastable Pb-Ti fluorite crystallizes from the pyrolyzed amorphous precursor. At slightly higher temperatures (∼420 °C/1 h), the thermodynamically stable phase with the perovskite structure epitaxially nucleates at the film/substrate interface. A small number of epitaxial grains grow through the film toward the surface and consume the nanocrystalline fluorite grains. Coarsening of the perovskite grains leads to a reduction in mosaic spread during further heating. Pores, which concurrently coarsen with grain growth, produce a pitted surface as they disappear from within the film. At 800 °C/1 ha dense epitaxial PbTiO3 film with a smooth surface is observed. Parameters governing the formation of a- and c-domains are discussed as well as the small tilts of the domain axes away from the substrate normal.

Crystalline Grains and Electrical Properties of Vacuumevaporated SnO2Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
W. K. Man ◽  
H. Yan ◽  
S. P. Wong ◽  
T. K. S. Wong ◽  
I. H. Wilson
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Grain Growth ◽  
Metal Films ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diode Ideality Factor ◽  
Current Voltage ◽  
Tin Metal

AbstractWe have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of these metal films. Surface morphology of the SnO2thin films was observed by atomic force microscopy. The grain size of the SnO2thin films is found to increase with the film thickness and oxidation temperature. Kinetics of the grain growth is discussed in terms of a 3-dimensional diffusion limited process. The diode current-voltage (I-V) characteristic of the SnO2/Si heterojunctions (isotype and anisotype) was measured in the temperature range of 14K-383K. Changes in the diode ideality factor and threshold voltage with temperature are discussed. In addition, we present ambient tunnelling I-V results measured from individual SnO2grains.

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